Search results for "NICS"
showing 10 items of 15025 documents
The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires
2015
We experimentally investigate the influence of AlN buffer growth on the nucleation and the polarity of a self-organized assembly of GaN nanowires (NWs) grown on Si. Two complementary growth mechanisms for AlN buffer deposited on Si are demonstrated. Both emphasize the aggregation of Si on the AlN surface and the growth of large cubic crystallites, namely, AlN pedestals. Further growths of GaN NWs assembly reveal that the GaN 2D layer found at the bottom of the NW assembly is the result of the coalescence of Ga-polar pyramids, whereas AlN pedestals are observed as preferential but not exclusive NW nucleation sites. NWs are N-polar or exhibit inversion domains with a Ga-polar core/N-polar she…
A General Mathematical Formulation for the Determination of Differential Leakage Factors in Electrical Machines with Symmetrical and Asymmetrical Ful…
2018
This paper presents a simple and general mathematical formulation for the determination of the differential leakage factor for both symmetrical and asymmetrical full and dead-coil windings of electrical machines. The method can be applied to all multiphase windings and considers Gorges polygons in conjunction with masses geometry in order to find an easy and affordable way to compute the differential leakage factor, avoiding the adoption of traditional methods that refer to the Ossanna's infinite series, which has to be obviously truncated under the bound of a predetermined accuracy. Moreover, the method described in this paper allows the easy determination of both the minimum and maximum v…
Determination of differential leakage factors in electrical machines with non-symmetrical full and dead-coil windings
2017
In this paper Gorges polygons are used in conjunction with masses geometry to find an easy and affordable way to compute the differential leakage factor of non symmetrical full and dead coil winding. By following the traditional way, the use of the Ossanna's infinite series which has to be obviously truncated under the bound of a predetermined accuracy is mandatory. In the presented method no infinite series is instead required. An example is then shown and discussed to demonstrate practically the effectiveness of the proposed method.
Spin Hall magnetoresistance in antiferromagnetic insulators
2020
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct observation of the antiferromagnetic state, however, is challenging due to the absence of a macroscopic magnetization. Here, we show that the spin Hall magnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spin structure via simple electrical transport experiments by investigating the easy-plane antiferromagnetic insulators $\alpha$-Fe2O3 (hematite) and NiO in bilayer heterostructures with a Pt heavy metal top electrode. While rotating an ext…
Amorphous ultra-wide bandgap ZnOx thin films deposited at cryogenic temperatures
2020
Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these applications. In this paper we report on X-ray amorphous a-ZnOx thin films (~500 nm) deposited at cryogenic temperatures by reactive magnetron sputtering. The substrates were cooled by a nitrogen flow through the copper substrate holder during the deposition. The films were characterized by X-ray diffraction (XRD), Raman, infrared, UV-Vis-NIR spectroscopies, and ellipsometry. The a-ZnOx films on glass and Ti substrates were obtained at the substrate holder temp…
Optical properties of GaSe, characterization and simulation
2021
Abstract The study focuses on structural and optical characterizations and properties of the GaSe lamellar material in one hand and on a numerical simulation of the photovoltaic properties of the ITO/GaSe heterojunction in a second hand. A few layers of GaSe were exfoliated from bulk GaSe on PET substrate. The optical transmission was recorded at room temperature. It shows that GaSe exhibits both indirect and direct band gaps of about 1.92 and 2.2 eV respectively. A value, as high as 104 cm−1, of the absorption coefficient was obtained. The corresponding refractive index has been determined numerically according to the Sellmeier and Cauchy models. The interesting value of absorption shows o…
Rivalry of diffusion, external field and gravity in micro-convection of magnetic colloids
2019
Magnetic fields and magnetic materials have promising microfluidic applications. For example, magnetic micro-convection can enhance mixing considerably. However, previous studies have not explained increased effective diffusion during this phenomenon. Here we show that enhanced interface smearing comes from a gravity induced convective motion within a thin microfluidic channel, caused by a small density difference between miscible magnetic and non-magnetic fluids. This motion resembles diffusive behavior and can be described with an effective diffusion coefficient. We explain this with a theoretical model, based on a dimensionless gravitational Rayleigh number, and verify it by numerical si…
Determination of fine magnetic structure of magnetic multilayer with quasi antiferromagnetic layer by using polarized neutron reflectivity analysis
2020
We carried out polarized neutron reflectivity (PNR) analysis to determine the fine magnetic structure of magnetic multilayers with quasi-antiferromagnetic (quasi-AFM) layers realized by 90-deg coupling using two Co90Fe10 layers, and quantitatively evaluated the magnetization of quasi-AFM layers. Two types of samples with different buffer layers, Ru buffer and a NiFeCr buffer, were investigated and the average angles between the respective magnetization of the two Co90Fe10 layers were estimated to be +/− 39 degrees and +/− 53 degrees. In addition, less roughness was found in the NiFeCr buffer sample resulting stronger 90-deg coupling. A perfect quasi-AFM is expected to be realized by a flat …
Partial discharges behavior under different rectified waveforms
2017
In this work, a previous software used to simulate partial discharges (PDs) under Alternating Current (AC) stress has been modified in order to evaluate the PDs behavior under a voltage stress close to the Direct Current (DC) waveform. By using a full-wave and a half-wave rectifier, the specimen with an air void defects has been subjected to a gradual constant stress. Finally, a capacitive filter has been inserted in order to produce a steadier voltage supply. Simulation results show that under an almost DC waveform, the PDs activity become less compared to AC stress.
High quality epitaxial Mn 2 Au (001) thin films grown by molecular beam epitaxy
2020
The recently discovered phenomenon of Neel spin–orbit torque in antiferromagnetic Mn2Au [Bodnar et al., Nat. Commun. 9, 348 (2018); Meinert et al., Phys. Rev. Appl. 9, 064040 (2018); Bodnar et al., Phys. Rev. B 99, 140409(R) (2019)] has generated huge interest in this material for spintronics applications. In this paper, we report the preparation and characterization of high quality Mn2Au thin films by molecular beam epitaxy and compare them with magnetron sputtered samples. The films were characterized for their structural and morphological properties using reflective high-energy electron diffraction, x-ray diffraction, x-ray reflectometry, atomic force microscopy, and temperature dependen…