Search results for "Nanopatterning"

showing 4 items of 4 documents

SPM and TOF-SIMS investigation of the physical and chemical modification induced by tip writing of self-assembled monolayers

2003

Abstract The nanoelectrochemical modification of alkyl self-assembled monolayers (SAMs) obtained on hydrogenated silicon surfaces via radical-initiated reactions of 1-octadecene has been investigated. Scanning Probe Microscopy (SPM) showed that the modification of the organic layer occurs by applying either positive or negative biases to the tip at a threshold of about ±5 V. When the bias absolute value was ≤6 V, the height of the monolayer was only faintly modified, whereas a consistent increase in tip/sample friction force was observed, in agreement with the formation of hydrophilic moieties at the organic surface. In addition to the increase of friction, bias absolute values larger than …

chemistry.chemical_classificationMaterials scienceSelf-assembled monolayerSiliconAnalytical chemistry1-AlkenesChemical modificationchemistry.chemical_elementNanopatterningBioengineeringSelf-assembled monolayerTip writingBiomaterialsSecondary ion mass spectrometryScanning probe microscopychemistryTOF-SIMSMechanics of MaterialsMonolayerAFMSilicon oxideAlkyl
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Area‐Selective Atomic Layer Deposition on Functionalized Graphene Prepared by Reversible Laser Oxidation

2022

Publisher Copyright: © 2022 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH. Area-selective atomic layer deposition (ALD) is a promising “bottom-up” alternative to current nanopatterning techniques. While it has been successfully implemented in traditional microelectronic processes, selective nucleation of ALD on 2D materials has so far remained an unsolved challenge. In this article, a precise control of the selective deposition of ZnO on graphene at low temperatures (<250 °C) is demonstrated. Maskless femtosecond laser writing is used to locally activate predefined surface areas (down to 300 nm) by functionalizing graphene to achieve excellent ALD selectivity (up to…

Area-selective atomic layer depositionnanorakenteetMechanics of Materialstwo-photon oxidationMechanical Engineeringatomic layer depositiongraphenesurface engineeringgrafeeninanotekniikkaatomikerroskasvatusnanopatterningAdvanced Materials Interfaces
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Self-organization and nanostructural control in thin film heterojunctions.

2013

In spite of more than two-decades of studies of molecular self-assembly, the achievement of low cost, easy-to-implement and multi-parameter bottom-up approaches to address the supramolecular morphology in three-dimensional (3D) systems is still missing. In the particular case of molecular thin films, the 3D nanoscale morphology and function are crucial for both fundamental and applied research. Here we show how it is possible to tune the 3D film structure (domain size, branching, etc.) of thin film heterojunctions with nanoscale accuracy together with the modulation of their optoelectronic properties by employing an easy two-step approach. At first we prepared multi-planar heterojunctions w…

Spin coatingMaterials sciencebusiness.industryExcitonSupramolecular chemistryNanotechnologyHeterojunction3D nanopatterning thin films non-equilibrium exciton diffusion length optoelectronic properties bulk heterojunctionsSemiconductorGeneral Materials ScienceThin filmLuminescencebusinessNanoscopic scaleNanoscale
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Faceting and structural anisotropy of nanopatterned CdO(110) layers

2005

CdO(110) layers with a self-organized surface structure have been grown on (10math0) sapphire (m plane) substrates by metal-organic vapor phase epitaxy. The epitaxial relationships between layer and substrate have been determined and a crystallographic model that accounts for the CdO in-plane orientation, which results in a reduced lattice mismatch when the CdO[001] direction is perpendicular to the sapphire c axis, has been proposed. Although the measured lattice parameters indicate that the layers are almost fully relaxed, an anisotropic mosaicity is detected with symmetrical rocking curves attaining minimum values when measured along the CdO[math10] direction. The layer morphology consis…

Materials scienceGeneral Physics and AstronomySemiconductor growthEpitaxyMosaicityVapour phase epitaxial growthCadmium compound ; Semiconductor epitaxial layers ; II-VI semiconductors ; Semiconductor growth ; Vapour phase epitaxial growth ; MOCVD ; Nanopatterning ; Self-assembly ; Lattice constants ; Mosaic structure ; Surface morphologyLattice constant:FÍSICA [UNESCO]PerpendicularMetalorganic vapour phase epitaxyAnisotropyCondensed matter physicsUNESCO::FÍSICASemiconductor epitaxial layersLattice constantsNanopatterningII-VI semiconductorsSelf-assemblyFacetingCrystallographyCadmium compoundMOCVDSapphireSurface morphologyMosaic structure
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