Search results for "Nitride"

EPR study of polymeric carbon nitride photocatalysts

2018

EPR spectrometry servea as a unique tool by characterization of polymeric carbon nitride photocatalysts and evaluation of its photocatalytic performance in suspension.

High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN

2012

We report on high-pressure optical absorption measurements on InN epilayers with a range of free-electron concentrations (5×1017–1.6×1019 cm−3) to investigate the effect of free carriers on the pressure coefficient of the optical band gap of wurtzite InN. With increasing carrier concentration, we observe a decrease of the absolute value of the optical band gap pressure coefficient of wurtzite InN. An analysis of our data based on the k·p model allows us to obtain a pressure coefficient of 32 meV/GPa for the fundamental band gap of intrinsic wurtzite InN. Optical absorption measurements on a 5.7-μm-thick InN epilayer at pressures above the wurtzite-to-rocksalt transition have allowed us to o…

Cathodoluminescence study of undoped GaN films: Experiment and calculation

2009

Abstract In this paper, we report the theoretical and experimental results of cathodoluminescence (CL) from GaN layers grown at 800 °C by metal organic vapor phase epitaxy (MOVPE) on silicon substrate. The CL spectra recorded at room temperature reveal the near band-edge emission at 3.35–3.42 eV and a broad yellow luminescence at 2.2 eV. The CL depth analysis at constant power excitation shows inhomogeneous CL distribution in depth of these emissions as the electron beam increases from 3 to 25 keV. There appears a blue shift of the CL band-edge peaks with increasing sample depth. This behavior is explained by a change of the fundamental band gap due to residual strain and the local temperat…

Bifunctional Z-Scheme Ag/AgVO3/g-C3N4 photocatalysts for expired ciprofloxacin degradation and hydrogen production from natural rainwater without usi…

2020

Abstract To maximize the employment of sustainable solar energy in treating the recalcitrant pollutant and hydrogen energy production, the development of a highly efficient photocatalyst is desirable. Herein, a Z-scheme Ag/AgVO3/g-C3N4 photocatalyst was synthesized via a wet-impregnation method. The amount of Ag/AgVO3 deposited onto g-C3N4 has a significant effect on the photocharge carrier separation and migration of the as-developed Z-scheme photocatalyst. It was found that 0.5 wt % Ag/AgVO3/g-C3N4 photocatalyst exhibited a profound photocatalytic degradation performance with 82.6% ciprofloxacin removal and 3.57 mmol/h of hydrogen produced from natural rainwater under visible-light irradi…

Hydrogen Arrangements on Defective Quasi-Molecular BN Fragments

2019

Considering the ever-increasing interest in metal-free materials, some potential chemical applications of quasi-molecular boron nitride (BN) derivatives were tested. Specifically, the behavior of BN fragments was analyzed when given defects, producing local electron density changes, were introduced by using topological engineering approaches. The inserted structural faults were Schottky-like divacancy (BN-d) defects, assembled in the fragment frame by the subtraction of one pair of B and N atoms or Stone-Wales (SW) defects. This study is aimed at highlighting the role of these important classes of defects in BN materials hypothesizing their future use in H-2-based processes, related to eith…

Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires

2012

cited By 2; International audience; Micro Raman spectroscopy studies have been performed on GaN nanowires grown by Plasma-Assisted Molecular Beam Epitaxy on Silicon (111) substrate. From the analysis of experimental data, the emergence of a two peaks band located near 700 cm-1 has been attributed to the Raman scattering by surface-related phonons. We have analyzed the surface character of these two modes by changing the dielectric constant of the exterior medium and some experimental parameters. Furthermore, a theoretical model describing the nanowires ensemble by means of an effective dielectric function has been used to interpret the Raman scattering results. Those numerical simulations a…

Multilevel pattern generation by GaN laser lithography: an application to beam shaper fabrication

2006

The new GaN lasers represent a unique combination of compactness, reliability, energy efficiency, and short wavelength. With respect to the previous state of the art in direct laser write lithography, based on gas lasers, this is resulting in a breakthrough, and is opening the way to real desktop micropatterning. The field of diffractive optics can immediately benefit by the availability of a new breed of pattern generators, based on such sources, mainly for fast turnaround device development. This paper presents the technical advantages involved in the use of 405 nm GaN lasers for one-step multilevel patterning. Beam modulation, exposure control and overall process strategy are discussed. …

Inside Back Cover: Boron Nitride‐supported Sub‐nanometer Pd 6 Clusters for Formic Acid Decomposition: A DFT Study (ChemCatChem 9/2017)

2017

Internal photoemission in solar blind AlGaN Schottky barrier photodiodes

2005

We have analyzed the photoresponse of solar blind AlGaN Schottky barrier photodiodes below the alloy band gap energy, in the 3.5-4.5 eV range, and we show that it is dominated by internal photoemission. The n-type Schottky barrier height is shown to increase linearly with the band gap energy of the AlGaN alloy. The amplitude of the internal photoemission signal is about 20 times smaller than the value given by the Fowler theory based on a free electron model. We explain this result by taking into account the interband transitions and the ballistic transport of photoexcited electrons in the metal. This low value of internal photoemission allows us to achieve a spectral rejection ratio betwee…

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

2013

We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanis…