Search results for "Opi"
showing 10 items of 14652 documents
Effect of Cu doping on Ba0.95Pb0.05TiO3 electrical properties studied by means of electrical impedance spectroscopy
2019
The ceramics of 0.95BaTiO3–0.05PbTiO3+Xwt.%CuO (X = 0.05, 0.1, 1, 3) were prepared by a solid phase reaction. The structural and morphology studies were carried out by means of X-ray diffraction te...
Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties
2012
In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schrodinger equation for a cylindrical nanowire of infinite length, a…
Formation of dislocations and hardening of LiF under high-dose irradiation with 5–21 MeV 12C ions
2017
R. Zabels, I. Manika, J. Maniks, and R.Grants acknowledge the national project IMIS2, and A. Dauletbekova, M. Baizhumanov, and M. Zdorovets the Ministry of Education and Science of the Republic of Kazakhstan for the financial support.
The role of structural disorder on luminescence of Eu-doped Na0.5Bi0.5TiO3
2020
A detailed analysis of photoluminescence of Eu-doped Na0.5Bi0.5TiO3 (NBT) is performed using it as a tool for describing the local structure of NBT. The obtained results reveal the low symmetry of the Eu3+ local environment in NBT, as indicated by the observed maximal number of sublevels of the 5D0→7F1 and the 5D0→7F2 luminescence transitions, clearly observed at low temperatures. Approximation of the luminescence spectra by Gaussian peaks provides valuable information about the shift of the involved levels upon change of the excitation wavelength. Variation in the strength of the crystal field in Eu-doped NBT is evaluated. Temperature dependence of the luminescence above room temperature i…
Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
2019
International audience; It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al-or Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo-and photoluminescence spectroscopy and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any…
Luminescence of divalent lanthanide doped BaBrI single crystal under synchrotron radiation excitations
2020
Abstract Luminescence excitation spectra of BaBrI single crystals doped by divalent lanthanide ions are studied using synchrotron radiation excitations from the MAX IV 1.5 GeV storage ring. The energy of the edge and the formation of core cation exciton as well as the energy threshold of the multiplications of electronic excitations is found. It was clearly established the energy transfer from intrinsic luminescence centers to Sm2+ and Eu2+ ions.
New low-temperature phosphate glasses as a host for Europium Ions
2021
Abstract Artificial lightining, especially that of light emitting diodes, and telecommunications are penetrating every part of human lives daily. Different compositions phosphate glasses were suggested as a suitable host material for Eu3+ ions. Here rare earth metal ions act as luminescent centers also perturbing the bond order of phosphate glass network comprised of (PO4)3−, [−(O)PO3]2−, [−(O)2PO2]−, [−(O)3PO] structural units, which is indicated by Raman spectroscopy, confirming successful integration of aforementioned ions into the glass material. Glasses doped with Eu3+ ions show their typical photoluminescence spectra in low symmetry environment, consisting of the highest intensity 5D0…
Hole localization in thermoelectric half-Heusler (Zr0.5Hf0.5)Co(Sb1−xSn ) thin films
2019
Abstract The (Ti, Zr, Hf)Co(Sb 1 − x Snx) material class has recently come into focus as an attractive p-type high-temperature thermoelectric material. This study experimentally demonstrates that homogeneous, highly textured (Zr0.5Hf0.5)Co(Sb 1 − x Snx) thin films can be grown on single crystalline MgO. By varying the sputter power, samples with both positive and negative Seebeck coefficient can be grown. The underlying reason for the sign change is the segregation of Sn nano-inclusions, which lower the effective doping of the half-Heusler matrix. Similarly the Hall constant also switches sign at low temperatures, which is modeled assuming semi-metal behavior and low temperature hole locali…
Ptychographic imaging and micromagnetic modeling of thermal melting of nanoscale magnetic domains in antidot lattices
2020
CA extern Antidot lattices are potential candidates to act as bit patterned media for data storage as they are able to trap nanoscale magnetic domains between two adjacent holes. Here, we demonstrate the combination of micromagnetic modeling and x-ray microscopy. Detailed simulation of these systems can only be achieved by micromagnetic modeling that takes thermal effects into account. For this purpose, a Landau-Lifshitz-Bloch approach is used here. The calculated melting of magnetic domains within the antidot lattice is reproduced experimentally by x-ray microscopy. Furthermore, we compare conventional scanning transmission x-ray microscopy with resolution enhanced ptychography. Hence, we …
Impact of Annealing Temperature on Tunneling Magnetoresistance Multilayer Stacks
2020
The effect of annealing temperatures on the tunnel magnetoresistance (TMR) of MgO-based magnetic tunnel junctions (MTJs) has been investigated for annealing between 190 and 370°C. The TMR shows a maximum value of 215% at an annealing temperature of 330°C. A strong sensitivity of the TMR and the exchange bias of the pinned ferromagnetic layers on the annealing temperature are observed. Depending on sensor application requirements, the MTJ can be optimized either for stability and pinning strength or for a high TMR signal by choosing the appropriate annealing temperature. The switching mechanism of the ferromagnetic layers in the MTJ and the influence of the annealing on the layer properties,…