6533b82ffe1ef96bd12953a0
RESEARCH PRODUCT
Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
Gwénolé JacopinJean-luc RouvièreBruno DaudinAna CrosNúria GarroAlexandre ConcordelBruno Gayralsubject
010302 applied physicsKelvin probe force microscopePolarity reversalMaterials sciencePhysics and Astronomy (miscellaneous)Polarity (physics)business.industryNanowireCathodoluminescence02 engineering and technology021001 nanoscience & nanotechnology01 natural sciences7. Clean energyIsotropic etching[SPI.MAT]Engineering Sciences [physics]/MaterialsNanolithography0103 physical sciences[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci][SPI.OPTI]Engineering Sciences [physics]/Optics / PhotonicOptoelectronics[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]0210 nano-technologybusinessMolecular beam epitaxydescription
International audience; It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al-or Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo-and photoluminescence spectroscopy and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any kind of substrates.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-04-29 |