Search results for "Optical"
showing 10 items of 7671 documents
X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors
2006
We have studied by X-ray absorption spectroscopy the local environment of Mn in highly homogeneous Ga 1-x Mn x N (0.06 <x<0.14) thin epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The measurements were performed in fluorescence mode around the Ga and Mn K-edges. In this report, we focus our attention to the X-ray absorption near edge spectroscopy (XANES) results. The comparison of the XANES spectra corresponding to the Ga and Mn edges indicates that Mn is substitutional to Ga in all samples studied. The XANES spectra measured at the Mn absorption edge shows in the near-edge region a double peak and a shoulder below the absorption edge and the main absorption peak after …
Low-Frequency Relaxation Phenomena in α-LiIO3: The Nature and Role of Defects
2002
The lithium iodate ionic conduction in the polar c-axis direction is studied between 35 and 470 K for crystals grown in various conditions. So far, to separate processes induced by the nature of electrodes, the impedance spectroscopy technique had been used at room temperature with both metallic and ideally polarizable insulating electrodes, so that a relaxation of space charges was clearly identified. Here, the temperature dependence of the hopping ionic conductivity exhibits quite different activation energies well related to the growth conditions. Following low-temperature Raman and thermodynamic experiments, a new approach based on a vacancy diffusion mechanism is proposed. Experimental…
VEH electronic structure of Si60
1993
Abstract We present a valence effective Hamiltonian (VEH) theoretical investigation on the electronic structure of Si60. The VEH one-electron energy level distribution calculated for Si60 is used to predict the ionization potential (7.86 eV), electron affinity (6.62 eV) and HOMO-LUMO energy gap (1.24 eV) of Si60. We also report the first allowed electronic transitions of Si60. The results are compared with other theoretical levels and with those calculated for C60.
Valence electronic structure of C60: Theoretical analysis of photoemission data
1993
Abstract We present a theoretical investigation of the valence band photoemission spectra of C 60 using the nonempirical valence effective Hamiltonian (VEH) method. The VEH-DOVS curves calculated for the C 60 molecule are found to be in excellent agreement with synchrotron-radiation photoemission spectra reported for C 60 films. A detailed interpretation of all the photoemission bands is performed in the light of the VEH results.
Theoretical study on the effect of backbone conformation on the electronic structure of poly(di-n-butylsilane)
1993
Abstract We present the results of valence effective Hamiltonian (VEH) calculations on the electronic structure of poly(di-n-butylsilane) in its all-trans and 7/3 conformations. The band structure of all-trans conformation is analyzed in detail and the effects of the backbone conformation on the electronic and optical properties are studied. The VEH results for the 2/1 and 7/3 conformations are in excellent quantitative agreement with photoemission and UV-absorption data and show the reliability of the VEH method to deal with organopolysilanes.
Structure and Properties of YbZnSn, YbAgSn, and Yb2Pt2Pb
1999
Abstract YbZnSn, YbAgSn, and Yb2Pt2Pb were synthesized by reacting the elements in sealed tantalum tubes in a high-frequency furnace. The structures of YbAgSn and Yb2Pt2Pb were refined from single crystal X-ray data: YbAgPb type, P 6 m2, a=479.2(2) pm, c=1087.3(3) pm, wR2=0.050, BASF=0.34(8), 509 F2 values, 18 variables for YbAgSn and Er2Au2Sn type, a=776.0(1) pm, c=701.8(2) pm, wR2=0.072, 426 F2 values, 18 variables for Yb2Pt2Pb. The lattice constants of YbZnSn are confirmed: NdPtSb type, P63mc, a=464.7(1) pm, c=747.7(2) pm. The stannides YbZnSn and YbAgSn crystallize with superstructures of the AlB2 type. The zinc (silver) and tin atoms form ordered Zn3Sn3 and Ag3Sn3 hexagons, respectivel…
Spin Switching in Molecular Quantum Cellular Automata Based on Mixed-Valence Tetrameric Units
2016
In this article we focus on the study of spin effects in a single square-planar mixed-valence cell comprising two electrons and in coupled molecular cells for quantum cellular automata. Using the vibronic model we demonstrate that the polarizabilities of the cell are different in spin-singlet and spin-triplet states of the electronic pair. Based on this inference the concept of spin switching in molecular quantum cellular automata is proposed, and the conditions under which this effect is feasible are derived. In order to reveal these conditions we have performed a series of quantum-mechanical calculations of the vibronic energy levels of the isolated cell and of the cell subjected to the e…
Pressure Dependence of the Band Gaps and Charge Densities in Si
1994
The empirical local and nonlocal pseudopotentials of Si which can describe the electronic energy structure over a wide energy range of more than 20 eV from the bottom of the valence band is determined for different pressures. The nonlocality of the potential is described by the Gaussian model. The predictions for the linear and quadratic pressure coefficients are consistent with the experiment. The valence charge densities of Si under high pressure are studied. The forbidden X-ray factor F(222) is very stable under pressure and changes by less than 3% under volume changes of the order of 5%.
Photomagnetic effect in a cyanide-bridged mixed-valence {FeII2FeIII2} molecular square
2012
The self-assembly of [Fe(III)(Tp)(CN)(3)](-) and [Fe(II)(bik)(2)(S)(2)](2+) affords the cyanide-bridged mixed valence {Fe(III)(2)Fe(II)(2)}(2+) molecular square, which exhibits a photomagnetic effect under laser light irradiation at low temperature and also shows thermal spin-state conversion near ambient temperature.
Theoretical calculations on the valence electronic structure of naphthalocyanine: comparison with experimental photoemission data
1993
Abstract We present a theoretical investigation of the electronic structure of metal-free 2,3-naphthalocyanine (2,3-H2Nc) using the valence effective Hamiltonian (VEH) technique. The VEH-DOVS curves obtained for 2,3-H2Nc are correlated with those calculated for naphthalene molecule and a one-to-one correspondence is found. From the electronic structure standpoint, naphthalocyanine has to be viewed as formed by joining four naphthalene moieties to the central carbon-nitrogen ring. An excellent quantitative agreement is found between VEH-DOVS curves and experimental photoemission data.