Search results for "Optoelectronics"
showing 10 items of 2306 documents
2.45 GHz synchronised polarised electron injection at MAMI
1998
Abstract A semiconductor modelocked diode laser has been used to produce picosecond spin-polarised electron bunches from strained GaAsP photocathodes and inject them into MAMI, synchronised to the 2.45 GHz accelerating field. The laser meets the operational requirements of MAMI producing stable electron beams, with a polarisation purity of 72% and a transmission efficiency of 52% at an accelerated beam current of 10.1 μA.
Surface processing of TlBr single crystals used for radiation detectors
2009
Abstract The processing method for obtaining the high-quality surfaces of TlBr single crystals, providing removal of a mechanically destroyed surface layer by chemical etching, is developed. The crystals grown from the melt of purified materials by the Bridgman–Stockbarger method were used for the experiments. The Vickers microhardness as a structure-sensitive technique was used in a study of the crystal quality and properties of the plastically deformed surface layer created by cutting. It was shown that even under highly accurate conditions of cutting, the depth of the work-hardened surface layer with a high density of dislocations, vacancies and other structural defects exceeds 20 μm. Th…
Luminescent detectors of ionising radiation
2003
Abstract At present in slow neutron imaging an active layer of an imaging plate IP contains a mixture of storage phosphors, usually BaFBr:Eu 2+ used for imaging of X-rays, and a neutron converter material, usually Gd 2 O 3 , LiF. A novel Li-containing luminescent material perspective for a direct neutron conversion and storage is discussed. Irradiation of LiBaF 3 crystals results in generation of Frenkel defect pairs and creation of F-type centres responsible for three absorption bands in UV-and visible spectral region. Because photo-stimulation in each of these absorption bands leads to bleaching of induced absorption, the F-type colour centres are convenient for storage of radiation dose.…
Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories
2010
Heavy ion single-event effect (SEE) measurements and total ionizing dose (TID) response for Micron Technology single-level cell 1, 2, 4, 8 Gb commercial NAND flash memory and multi-level cell 8, 16, 32 Gb are reported. The heavy ion measurements were extended down to LET 0.1 MeV-cm2/mg. Scaling effects in SEE and TID response are discussed. Floating gate bit error upset cross section does not scale with feature size at high LETs, except for single-level cell 8 Gb device which is built with 51 nm processes. The threshold LET does not change with scaling. Charge pump TID degradation and standby current improves with scaling. In general, the effect of radiation is either unchanged or is less s…
Nanoscale X-ray detectors based on individual CdS, SnO2 and ZnO nanowires
2021
Abstract The development of nanoscale X-ray sensors is of crucial importance to achieve higher spatial resolution in many X-ray-based techniques playing a key role in materials science, healthcare, and security. Here, we demonstrate X-ray detection using individual CdS, SnO 2 , and ZnO nanowires (NWs). The NWs were produced via vapor–liquid–solid technique and characterized using X-ray diffraction, scanning, and transmission electron microscopy . Electrical measurements were performed under ambient conditions while exposing two-terminal NW-based devices to X-rays generated by a conventional tungsten anode X-ray tube. Fast and stable nanoampere-range X-ray beam induced current (XBIC) in resp…
Probe prototypes based on TlBr detectors
2009
Abstract Detectors based on TlBr crystals are ideally suited for the probes, where small size and rapid stopping power are highly desirable attributes. The development results of TlBr probes for medical and nuclear industry applications are presented here. Probes for both applications include TlBr detectors with dimensions of 5×5×2 mm 3 and a microelectronics preamplifier. The different construction and technological aspects of probes designed for both application types are discussed. The probes were tested over a wide energy range. We obtained energy resolutions of 3.6, 4.9 and 14.5 keV at energies of 59.6, 122 and 662 keV, respectively, for the developed probe prototypes at room temperatu…
A radio frequency ring electrode cooler for low-energy ion beams
2004
We are investigating a new concept for ion confinement while buffer-gas-cooling low-energy ion beams. Instead of applying the well-established technique of Radio Frequency Quadrupoles (RFQs) where the ions are transversely confined by a quadratic-pseudo potential we are using a stack of thin ring electrodes supplied by an RF field (RF funnel) which creates a box-shaped potential well. In Monte Carlo simulations we have investigated the transmission behavior and cooling performance of the RF funnel. First experimental investigations with ion currents up to 20 nA revealed a promising transmission characteristic which qualifies the RF funnel as high-current cooler.
Detector blockbased on arrays of 144 SiPMs and monolithic scintillators: A performane study
2015
[EN] We have developed a detector block composed by a monolithic LYSO scintillator coupled to a custom made 12 12 SiPMs array. The design is mainly focused to applications such as Positron Emission Tomography. The readout electronics is based on 3 identical and scalable Application Specific Integrated Circuits (ASIC). We have determined the main performance of the detector block namely spatial, energy, and time resolution but also the system capability to determine the photon depth of interaction, for different crystal surface treatments. Intrinsic detector spatial resolution values as good as 1.7 mm FWHM and energies of 15% for black painted crystals were measured. & 2014 Elsevier B.V. All…
SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks
2014
Abstract. This work presents experimental Single Event Gate Rupture (SEGR) data for Metal–Insulator–Semiconductor (MIS) devices, where the gate dielectrics are made of stacked SiO2–Si3N4 structures. A semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is first proposed. Then interrelationship between SEGR cross- section and heavy-ion induced energy deposition probability in thin dielectric layers is discussed. Qualitative connection between the energy deposition in the dielectric and the SEGR is proposed. peerReviewed
Gain Dynamics after Ultrashort Pulse Trains in Quantum Dot based Semiconductor Optical Amplifiers
2007
We study the gain dynamics in QD-based SOAs after excitation with fs-pulse trains of up to THz repetition rates. A complete ground-state gain recovery is found for 200 GHz repetition rates and injection currents around 90 mA.