Search results for "Optoelectronics"
showing 10 items of 2306 documents
Light trapping by plasmonic nanoparticles
2020
Abstract Metallic nanoparticles sustaining localized surface plasmon resonances are of great interest for enhancing light trapping in thin film photovoltaics. In this chapter, we explore the correlation between the structural and optical properties of self-assembled silver nanostructures fabricated by a solid-state dewetting process on various substrates relevant for silicon photovoltaics and later integrated into plasmonic back reflectors. Our study allows us to optimize the performance of nanostructures by identifying the fabrication conditions in which desirable circular and uniformly spaced nanoparticles are obtained. Second, we introduce a novel optoelectronic spectroscopic method that…
Optoelectronic morphological image processor.
2009
A morphological optoelectronic image processor based on the threshold decomposition concept is described and demonstrated. Binary slices of a gray-scale input image are optically convolved with a binary structuring element of arbitrary size and shape in a noncoherent convolver. The slices are displayed on a liquid-crystal spatial light modulator of 320 × 264 pixels. The kernels are implemented as modifications of the system impulse response. The processor’s convolution patterns are recorded with a CCD camera and fed into a PC by a frame grabber. Subsequent elementary morphological operations are looped. Examples of processing an input image of 256 × 256 pixels and 16 gray levels with kernel…
Nonlinear polarization effects in optical fibers: polarization attraction and modulation instability [Invited]
2014
We review polarization stabilization techniques based on the polarization attraction effect in low-birefringence fibers. Polarization attraction or pulling may be based on cross-polarization modulation, on parametric amplification, and on Raman or Brillouin scattering. We also review methods for laser frequency conversion based on polarization modulation instabilities in low- and high-birefringence fibers, and photonic crystal fibers. Polarization instabilities in nonlinear fibers may also be exploited for sensing applications.
All-optical regeneration of polarization of a 40 Gbit/s return-to-zero telecommunication signal
2013
International audience; We report all-optical regeneration of the state of polarization of a 40 Gbit/s return-to-zero telecommunication signal. The device discussed here consists of a 6.2-km-long nonzero dispersion-shifted fiber, with low polarization mode dispersion, pumped from the output end by a backward propagating wave coming from either an external continuous source or a reflection of the signal. An initially scrambled signal acquires a degree of polarization close to 100% toward the polarization generator output. All-optical regeneration is confirmed by means of polarization and bit-error-rate measurements as well as real-time observation of the eye diagrams. We show that the physic…
Tunable Phosphorescent Emission through Energy Transfer within Multilayer Thin Films Based on a Carbazole-Based Host and Ir(III)-Complex Guest System
2009
A new method to tune both phosphorescence emission intensity and spectroscopic colors based on the alternatively structured host/guest multilayer thin films prepared by the spin-assisted LbL deposition is presented. Their emission characteristics are demonstrated with pairs of positively charged Ir-PEI complexes as guests and negatively charged CBZ-PAA as hosts. The phosphorescent emission of Ir-PEI complexes is enhanced by the energy transfer from the host to the guest and, additionally, this energy transfer can be finely tuned by the insertion of spacer layers between the phosphorescent donor and acceptor layers to vary the emission intensity as well as to render different emission colors.
Statistical Characterization of Self-Assembled Colloidal Crystals by Single-Step Vertical Deposition
2014
Abstract We have statistically characterized the self-assembly of multi-layer polystyrene colloidal crystals, using the technique of vertical deposition, with parameters chosen to produce thick layers of self-assembled crystals in one deposition step. The size distribution of domains produced with this technique was seen to follow a log-normal distribution, hinting that aggregation or fragmentation phenomena play a role. In addition, using a lithographically directed self-assembly method, we have shown that the size of multi-layer, continuous crack-free domains in lithographically defined areas can be many times larger than in the surrounding areas. In a single deposition step, we have prod…
Production of nanometer-size GaAs nanocristals by nanosecond laser ablation in liquid.
2012
This paper reports the formation and characterization of spherical GaAs quantum dots obtained by nanosecond pulsed laser ablation in a liquid (ethanol or methanol). The produced bare GaAs nanoparticles demonstrate rather narrow size distribution which depends on the applied laser power density (from 4.25 to 13.9 J/cm 2 in our experiments) and is as low as 2.5 nm for the highest power used. The absolute value of the average diameter also decreases significantly, from 13.7 to 8.7 nm, as the laser power increases in this interval. Due to the narrow nanoparticle size dispersion achieved at the highest laser powers two absorption band edges are clearly distinguishable at about 1.72 and 3.15 eV w…
Failure analysis of normally-off GaN HEMTs under avalanche conditions
2020
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…
Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices
2015
Quantum confinement in closely packed arrays of Ge quantum dots (QDs) was studied for energy applications. In this work, we report an efficient tuning mechanism of the light harvesting and detection of Ge QDs. Thin films of SiGeO alloys, produced by rf-magnetron sputtering, were annealed at 600 degrees C in N-2 to induce precipitation of small amorphous Ge QDs into the oxide matrix. Varying the Ge content, the QD size was tailored between 2 and 4 nm, as measured by high resolution transmission electron microscopy. X-ray photoelectron spectroscopy (XPS) measurements indicate the formation of pure SiO2, as well as the presence of a sub-stoichiometric Ge oxide shell at the QD interface. Light …
Defect incorporation in In-containing layers and quantum wells: Experimental analysis via deep level profiling and optical spectroscopy
2020
Abstract Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL reduces the density of non-radiative recombination centers (NRCs) in the QW itself: during the growth of the UL, surface defects are effectively buried in the UL, without propagating towards the QW region. Despite the importance of this hypothesis, the concentration profile of defects in the quantum wells of LEDs with and without the UL was never investigated in detail. This paper uses combined capacitance-voltage and steady-state pho…