Search results for "Optoelectronics"
showing 10 items of 2306 documents
Exploiting the optical quadratic nonlinearity of zinc-blende semiconductors for guided-wave terahertz generation: A material comparison
2010
We present a detailed analysis and comparison of dielectric waveguides made of CdTe, GaP, GaAs and InP for modal phase matched optical difference frequency generation (DFG) in the terahertz domain. From the form of the DFG equations, we derived the definition of a very general figure of merit (FOM). In turn, this FOM enabled us to compare different configurations, by taking into account linear and nonlinear susceptibility dispersion, terahertz absorption, and a rigorous evaluation of the waveguide modes properties. The most efficient waveguides found with this procedure are predicted to approach the quantum efficiency limit with input optical power in the order of kWs.
Simple guidelines to predict self-phase modulation patterns
2018
International audience; We present a simple approach to predict the main features of optical spectra affected by self-phase modulation (SPM), which is based on regarding the spectrum modification as an interference effect. A two-wave interference model is found sufficient to describe the SPM-broadened spectra of initially transform-limited or up-chirped pulses, whereas a third wave should be included in the model for initially down-chirped pulses. Simple analytical formulae are derived, which accurately predict the positions of the outermost peaks of the spectra.
Pd/Au/SiC Nanostructured Diodes for Nanoelectronics: Room Temperature Electrical Properties
2010
Pd/Au/SiC nanostructured Schottky diodes were fabricated embedding Au nanoparticles (NPs) at the metalsemiconductor interface of macroscopic Pd/SiC contacts. The Au NPs mean size was varied controlling the temperature and time of opportune annealing processes. The electrical characteristics of the nanostructured diodes were studied as a function of the NPs mean size. In particular, using the standard theory of thermoionic emission, we obtained the effective Schottky barrier height (SBH) and the effective ideality factor observing their dependence on the annealing time and temperature being the signature of their dependence on the mean NP size. Furthermore, plotting the effective SBH as a fu…
Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide
2019
Atomic layer deposition (ALD) is the method of choice to obtain uniform insulating films on graphene for device applications. Owing to the lack of out-of-plane bonds in the sp(2) lattice of graphene, nucleation of ALD layers is typically promoted by functionalization treatments or predeposition of a seed layer, which, in turn, can adversely affect graphene electrical properties. Hence, ALD of dielectrics on graphene without prefunctionalization and seed layers would be highly desirable. In this work, uniform Al2O3 films are obtained by seed-layer-free thermal ALD at 250 degrees C on highly homogeneous monolayer (1L) epitaxial graphene (EG) (amp;gt;98% 1L coverage) grown on on-axis 4H-SiC(00…
Room-Temperature Electrical Characteristics of Pd∕SiC Diodes with Embedded Au Nanoparticles at the Interface
2010
We investigate the effects of localized controlled nanometric inhomogeneities, represented by Au nanoparticles, on the electrical properties of Pd/SiC Schottky diodes. In particular, we investigate the effects of the nanoparticle radius R on the current-voltage characteristics. The main result concerns the strong dependence of the effective Schottky barrier height of the Pd/SiC contact on R, giving a practical technique to tailor, in a wide range, such a barrier height by simply changing the process parameters during the diode preparation. Then, from a basic understanding point of view, such data allow us to test the Tung model describing the effects of inhomogeneities on the electrical pro…
Periodic time-domain modulation for the electrically tunable control of optical pulse train envelope and repetition rate multiplication
2012
An electrically tunable system for the control of optical pulse sequences is proposed and demonstrated. It is based on the use of an electrooptic modulator for periodic phase modulation followed by a dispersive device to obtain the temporal Talbot effect. The proposed configuration allows for repetition rate multiplication with different multiplication factors and with the simultaneous control of the pulse train envelope by simply changing the electrical signal driving the modulator. Simulated and experimental results for an input optical pulse train of 10 GHz are shown for different multiplication factors and envelope shapes. © 2006 IEEE.
Advanced nonlinear signal processing in silicon-based waveguides
2015
This talk presents recent progress in optical signal processing based on compact waveguides fabricated mainly using silicon germanium alloys. Applications include supercontinuum generation, wavelength conversion and signal regeneration.
Asymptotic properties of incoherent waves propagating in an all-optical regenerators line
2007
International audience; We present an original method to generate optical pulse trains with random time-interval values from incoherent broadband sources. More precisely, our technique relies on the remarkable properties of a line made of cascaded self-phase modulation-based optical regenerators. Depending on the regenerator parameters, various regimes with noticeably different physical behaviors can be reported.
Nonlinear morphological correlation: optoelectronic implementation
2008
An optoelectronic implementation of the nonlinear morphological correlation by use of a threshold-decomposition technique and a joint transform correlator architecture is presented. This nonlinear morphological correlation provides improved image detection compared with standard linear optical pattern-recognition correlation methods. It also offers a more robust detection of low-intensity images in the presence of high-intensity patterns to be rejected.
Boron doping of silicon rich carbides: Electrical properties
2013
Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier Transform Infrared spectroscopy indicates the occurrence of remarkable interdiffusion between adjacent layers. However, the investigated material retains memory of the initial dopant distribution. Electrical measurements suggest the presence of an unintentional dopant impurity in the intrinsic SiC matrix. The overall volume concentration of nanodots is determined by optical simulation and is shown not to contribute to lateral conduction. Remarka…