Search results for "Optoelectronics"
showing 10 items of 2306 documents
Comparison between Focused Electron/Ion Beam-Induced Deposition at Room Temperature and under Cryogenic Conditions
2019
This article belongs to the Special Issue Multi-Dimensional Direct-Write Nanofabrication.
Fabrication of a Silicide Thermoelectric Module Employing Fractional Factorial Design Principles
2021
AbstractThermoelectric modules can be used in waste heat harvesting, sensing, and cooling applications. Here, we report on the fabrication and performance of a four-leg module based on abundant silicide materials. While previously optimized Mg2Si0.3Sn0.675Bi0.025 is used as the n-type leg, we employ a fractional factorial design based on the Taguchi methods mapping out a four-dimensional parameter space among Mnx-εMoεSi1.75−δGeδ higher manganese silicide compositions for the p-type material. The module is assembled using a scalable fabrication process, using a Cu metallization layer and a Pb-based soldering paste. The maximum power output density of 53 μW cm–2 is achieved at a hot-side temp…
Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing
2018
InAs crystals are emerging materials for various devices like radio frequency transistors and infrared sensors. Control of oxidation-induced changes is essential for decreasing amounts of the harmful InAs surface (or interface) defects because it is hard to avoid the energetically favored oxidation of InAs surface parts in device processing. We have characterized atomic-layer-deposition (ALD) grown Al2O3/InAs interfaces, preoxidized differently, with synchrotron hard X-ray photoelectron spectroscopy (HAXPES), low-energy electron diffraction, scanning tunneling microscopy, and time-of-flight elastic recoil detection analysis. The chemical environment and core-level shifts are clarified for w…
Surface and interface effects on the current-voltage characteristic curves of multiwall carbon nanotube-Si hybrid junctions selectively probed throug…
2021
The possibility to increase the efficiency of photovoltaic (PV) cells based on hybrid carbon nanotube (CNT)–Si heterojunctions is related to the ability to control the chemical properties of the CNT–Si interface and of the CNT bundle layer. In spite of the encouraging performances of PV cells based on multiwall (MW) CNT, so far few efforts have been made in the study of this device compared to single wall (SW) CNT–Si interfaces. Here, surface and interface effects on the current–voltage characteristic curves of MW CNT–Si hybrid junctions are investigated through exposure to HF vapors and to 10 ppm-NO2 and compared to the effects detected in SW CNT–Si junctions. Quite similar results in term…
Anomalous electrical parameters improvement in Ruthenium DSSC
2018
. In this work, we present a series of measurements carried out on Ruthenium-based Dye Sensitized Solar Cells (DSSCs) after the application of different external electrical field values. Such measurements have been performed both in the dark and by illuminating the sample with sunlight emitted by a solar simulator (AM1.5G spectrum with a power irradiance of 1000 W/m2). Our results demonstrate that the initial electrical bias field modifies in both cases the behavior of the cell in terms of an anomalous improvement of the main electrical parameters.
Anomalous performance enhancement effects in Ruthenium-based Dye Sensitized Solar Cells
2017
Dye Sensitized Solar Cells (DSSCs) are nowadays more and more employed since they present lower production costs than traditional silicon photovoltaic devices. An interesting phenomenon affecting such devices consists in the fact that current density-voltage (J-V) characteristic can depend on the history of the cell prior to the measurement, which often can be assimilated to an anomalous hysteresis effect. In this work, we study such phenomenon on Ruthenium-based DSSCs through a series of measurements performed after applying different values of external electrical field to the cell. The measurements have been carried out both under simulated sunlight (AM1.5G - 1000 W/m2) and in the dark. W…
Enhanced Thin-Film Transistor Performance by Combining 13,6-N-Sulfinylacetamidopentacene with Printed PEDOT:PSS Electrodes
2011
Bottom-contact/bottom-gate organic thin-film transistors (OTFTs) are fabricated using a soluble pentacene precursor (13,6-N-sulfinylacetamidopentacene; SAP) and inkjet printed PEDOT:PSS electrodes on bare SiO2 dielectrics. Saturation mobility, Ion/Ioff ratio, and threshold voltage parameters, respectively, of 0.27 cm2 V−1 s−1, 105, and −4.25 V were measured under ambient conditions after the thermal conversion of SAP to pentacene in 100 μm long channel OTFT devices. The results obtained by the above solution approach are comparable to that of vapor-phase grown pentacene-based OTFTs with photolithographic gold contacts and organic buffer layers and/or inorganic injection layers. The present …
Accelerated Light-Induced Defect Transformation Study of Elkem Solar Grade Silicon
2012
AbstractSolar cells made of silicon feedstock from a metallurgical route must qualify not only the initial efficiency, but must also be comparable to the solar cells made from reference polysilicon on the spectral response after light induced degradation. A detailed comparative study of light induced defects and its impact on cell performance is necessary for both materials. We have studied accelerated light induced degradation (ALID) defect transformation for Elkem Solar Silicon and polysilicon solar cells by selecting wafers from different positions from respective silicon bricks. Active boron-oxygen complexes and iron ions in multicrystalline silicon solar cells have been analyzed, and t…
The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
2002
The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.
Irradiation Effects in Optical Fibers
2010
Intrinsic and extrinsic optical fiber-based sensors are promising devices to be used in very different and complex environments, by their very nature: capabilities to work under electromagnetic fields; possibility to carry multiplexed signals (time, wavelength multiplexing); small size and low mass; ability to handle multi-parameter measurements in distributed configuration; possibility to monitor sites far away from the controller. In the case of the optical fibers, the possibility to be incorporated into various types of sensors and actuators, free of additional hazards (i.e. fire, explosion), made them promising candidates to operate in adverse conditions as those required by space appli…