Search results for "Optoelectronics"

showing 10 items of 2306 documents

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

2011

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm 2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster. © 2011 Optical Society of America.

FabricationComputer sciencePacket networksPhosphinesIntegrationIndium phosphideIndiumSemiconductor laser theoryFootprint (electronics)chemistry.chemical_compoundDiscrete componentsSpectral amplitudeComputer Communication NetworksTEORIA DE LA SEÑAL Y COMUNICACIONESMonolithically integratedOptical labelsOptical amplifierSignal processingbusiness.industryExperimental characterizationInPOptical DevicesSignal Processing Computer-AssistedEquipment DesignChipIntegration schemeAtomic and Molecular Physics and OpticsOptical packet networksEquipment Failure Analysischemistryvisual_artElectronic componentvisual_art.visual_art_mediumIndium phosphideOptoelectronicsMonolithic integrated circuitsbusinessLabel swapping
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Nonlinear Characterisation of an AsSe Chalcogenide Holey Fiber

2009

oral session TuA " Highly Nonlinear Fibers " [TuA1]; International audience; We report the nonlinear characterization of a chalcogenide holey fiber, based on the AsSe glass composition. A nonlinear coefficient as high as 15 000 W-1 km-1 has been measured.

FabricationKerr effectOptical fiberMaterials science[SPI.OPTI] Engineering Sciences [physics]/Optics / PhotonicChalcogenideChalcogenide glass02 engineering and technology01 natural scienceslaw.invention010309 opticschemistry.chemical_compound020210 optoelectronics & photonicsOpticslaw0103 physical sciences0202 electrical engineering electronic engineering information engineeringbusiness.industryNonlinear opticsNonlinear systemchemistry[SPI.OPTI]Engineering Sciences [physics]/Optics / PhotonicOptoelectronics[ SPI.OPTI ] Engineering Sciences [physics]/Optics / PhotonicbusinessRefractive index
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Controlled solution-based fabrication of perovskite thin films directly on conductive substrate

2021

Abstract Organometallic perovskites are one of the most investigated materials for high-efficiency thin-film devices to convert solar energy and supply energy. In particular, methylammonium lead iodide has been used to realize thin-film perovskite solar cells, achieving an efficiency higher than 20%. Different fabrication procedures based on the spin-coating technique have been proposed, which do not ensure homogenous morphologies. In this work, we present a scalable process to fabricate methylammonium lead iodide thin films directly on conductive substrates, consisting of electrodeposition and two subsequent chemical conversions. A thorough investigation of the morphological, structural an…

FabricationMaterials scienceAbsorption spectroscopyChemical conversion Electrodeposition Organometallic perovskite Solar cell Thin filmIodide02 engineering and technologySubstrate (electronics)01 natural sciences0103 physical sciencesSettore ING-IND/17 - Impianti Industriali MeccaniciMaterials ChemistryThin filmAbsorption (electromagnetic radiation)Perovskite (structure)010302 applied physicschemistry.chemical_classificationbusiness.industrySettore FIS/01 - Fisica SperimentaleMetals and AlloysSurfaces and Interfaces021001 nanoscience & nanotechnologySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsSettore ING-IND/23 - Chimica Fisica ApplicatachemistryOptoelectronics0210 nano-technologybusinessLayer (electronics)
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Efficient Vacuum Deposited P-I-N Perovskite Solar Cells by Front Contact Optimization.

2020

Hole transport layers HTLs are of fundamental importance in perovskite solar cells PSCs , as they must ensure an efficient and selective hole extraction, and ohmic charge transfer to the corresponding electrodes. In p i n solar cells, the ITO HTL is usually not ohmic, and an additional interlayer such as MoO3 is usually placed in between the two materials by vacuum sublimation. In this work, we evaluated the properties of the MoO3 TaTm TaTm is the HTL N4,N4,N4 amp; 8243;,N4 amp; 8243; tetra [1,1 amp; 8242; biphenyl] 4 yl [1,1 amp; 8242; 4 amp; 8242;,1 amp; 8243; terphenyl] 4,4 amp; 8243; diamine hole extraction interface by selectively annealing either MoO3 prior to the deposition of TaTm o…

FabricationMaterials scienceAnnealing (metallurgy)Perovskite solar cell02 engineering and technologyperovskite solar cell ; molybdenum oxide ; vacuum deposition ; processing ; hole transport layer010402 general chemistryhole transport layer01 natural sciencesmolybdenum oxidelcsh:ChemistryVacuum depositionWork functionOhmic contactMaterialsCèl·lules fotoelèctriquesOriginal Researchbusiness.industryGeneral Chemistryvacuum-deposition021001 nanoscience & nanotechnologyperovskite solar cell0104 chemical sciencesActive layerChemistrylcsh:QD1-999ElectrodeOptoelectronicsprocessing0210 nano-technologybusinessFrontiers in chemistry
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3D Colloidal photonic crystal fabrication improved by AC fields for frequency conversion enhancement in photovoltaics

2011

We report on the fabrication of high-quality 3D colloidal photonic crystals, whose finality is to modify the emission properties of frequency converters for photovoltaic applications. The band structure of the photonic crystals can be used to enhance the emission of down- and up-converters materials embedded in the 3D structures. However, in order to achieve an efficient conversion the first step is to obtain highly ordered templates with appropriated dimensions. We analyze here the photonic crystals obtained by the dip-coating or vertical deposition method. Moreover, by using perpendicular AC fields during the assembly of the nanospheres, the quality of the packed structures has been impro…

FabricationMaterials scienceBand gapbusiness.industryPhotovoltaicsTransmittancePhysics::OpticsOptoelectronicsColloidal crystalbusinessElectronic band structureDip-coatingPhotonic crystal2011 37th IEEE Photovoltaic Specialists Conference
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Highly-sensitive anisotropic porous silicon based optical sensors

2012

The modeling, fabrication and characterization of PSi fabricated from both (110) and (100) surface oriented silicon for optical sensing is thoroughly reported. First, based on the generalized Bruggeman method, the birefringence and sensitivity of the fabricated membranes were calculated as a function of the fabrication parameters such as porosity and pore sizes; and external effects, such as the pores surface oxidation. Thereafter we report on the fabrication of PSi membranes from (110) and (100) surface oriented silicon with pore sizes in the range of 50 - 80 nm, and the characterization of their birefringence using a polarimetric setup. Their sensitivities were determined by filling the p…

FabricationMaterials scienceBirefringenceSiliconbusiness.industrychemistry.chemical_elementPorous siliconWavelengthMembraneOpticschemistryOptoelectronicsPorositybusinessRefractive index
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Chalcogenide thin films for direct resistors fabrication and trimming

2004

Abstract The fabrication of thin film resistors based on Ge–Sb–Te chalcogenide alloys is proposed. By exploiting the phase change properties of the deposited film, a laser beam is used for inducing a transition from high to low resistivity along selected paths. Conductivity changes as high as four orders of magnitude can be routinely achieved. This candidates the technique for maskless fabrication of compact precision resistors for a variety of applications.

FabricationMaterials scienceChalcogenideOrders of magnitude (temperature)business.industryMechanical EngineeringPhysics::OpticsConductivityCondensed Matter PhysicsLaser trimmingComputer Science::Otherlaw.inventionCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistryMechanics of MaterialsElectrical resistivity and conductivitylawOptoelectronicsGeneral Materials ScienceThin filmResistorbusiness
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Mode cleaning in graphene oxide-doped polymeric whispering gallery mode microresonators

2020

The strategy to incorporate graphene oxide (GO) in a composite material offers significant opportunities to realize compact photonic devices, such as saturable absorbers and polarization selective devices. However, the processing of GO-based composites by direct laser writing, which would afford vast patterning and material flexibility in a single step process, has been little addressed. In this work, we investigated the mechanisms underlying a mode cleaning effect in polymeric whispering gallery mode microresonators containing GO, aiming at the development of on-chip integrable photonic devices. We fabricated the microresonators (cavity loaded Q-factor of 20 000 at 1550 nm) in a single ste…

FabricationMaterials scienceExtinction ratioGraphenebusiness.industryUNESCO::FÍSICAGeneral ChemistryPolarization (waves)LaserÓPTICA NÃO LINEARlaw.inventionmicroresonatorslaw:FÍSICA [UNESCO]FemtosecondMaterials ChemistryOptoelectronicsgraphene oxidePhotonicsWhispering-gallery wavewhispering gallery modesbusiness
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Polarization Modulation Instability in Dispersion-Engineered Photonic Crystal Fibers

2021

Generation of widely spaced polarization modulation instability (PMI) sidebands in a wide collection of photonic crystal fibers (PCF), including liquid-filled PCFs, is reported. The contribution of chromatic dispersion and birefringence to the net linear phase mismatch of PMI is investigated in all-normal dispersion PCFs and in PCFs with one (or two) zero dispersion wavelengths. Large frequency shift sidebands are demonstrated experimentally. Suitable fabrication parameters for air-filled and liquid-filled PCFs are proposed as guidelines for the development of dual-wavelength light sources based on PMI.

FabricationMaterials scienceGeneral Chemical EngineeringANDi fiberPhysics::Optics02 engineering and technology01 natural sciencesInstability010309 opticsInorganic Chemistry020210 optoelectronics & photonics0103 physical sciencesDispersion (optics)0202 electrical engineering electronic engineering information engineeringlcsh:QD901-999General Materials ScienceMaterialsLinear phaseBirefringencebusiness.industryliquid-filled PCFPolarization modulationÒpticaCondensed Matter PhysicsWavelengthpolarization modulation instabilityOptoelectronicsCristallslcsh:Crystallographybusinessphotonic crystal fiberPhotonic-crystal fiberCrystals
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Fabrication and Photoelectrochemical Behavior of Ordered CIGS Nanowire Arrays for Application in Solar Cells

2010

In this work, we report some preliminary results concerning the fabrication of quaternary copper, indium, gallium, and selenium CIGS nanowires that were grown inside the channels of an anodic alumina membrane by one-step potentiostatic deposition at different applied potentials and room temperature. A tunable nanowire composition was achieved through a manipulation of the applied potential and electrolyte composition. X-ray diffraction analysis showed that nanowires, whose chemical composition was determined by energy-dispersive spectroscopy analysis, were amorphous. A composition of Cu0.203In0.153Ga0.131Se0.513, very close to the stoichiometric value, was obtained. These nanostructures wer…

FabricationMaterials scienceGeneral Chemical EngineeringNanowirechemistry.chemical_elementNanotechnologyCopper Indium Gallium Selenidechemistry.chemical_compoundCopper Indium Gallium Selenide; Solar Cells; Template Synthesis; Electrodeposition; Anodic Alumina MembranesElectrodepositionElectrochemistryGeneral Materials ScienceElectrical and Electronic EngineeringPhysical and Theoretical ChemistryGalliumAnodic Alumina MembranesPhotocurrentbusiness.industryCopper indium gallium selenide solar cellsAmorphous solidSettore ING-IND/23 - Chimica Fisica ApplicatachemistrySolar CellTemplate SynthesiOptoelectronicsbusinessCopper indium gallium selenideIndiumElectrochemical and Solid-State Letters
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