6533b7d5fe1ef96bd1263c67

RESEARCH PRODUCT

Chalcogenide thin films for direct resistors fabrication and trimming

A. CastigliaC. ArnoneGiuseppe LulloG. Carini

subject

FabricationMaterials scienceChalcogenideOrders of magnitude (temperature)business.industryMechanical EngineeringPhysics::OpticsConductivityCondensed Matter PhysicsLaser trimmingComputer Science::Otherlaw.inventionCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistryMechanics of MaterialsElectrical resistivity and conductivitylawOptoelectronicsGeneral Materials ScienceThin filmResistorbusiness

description

Abstract The fabrication of thin film resistors based on Ge–Sb–Te chalcogenide alloys is proposed. By exploiting the phase change properties of the deposited film, a laser beam is used for inducing a transition from high to low resistivity along selected paths. Conductivity changes as high as four orders of magnitude can be routinely achieved. This candidates the technique for maskless fabrication of compact precision resistors for a variety of applications.

yearjournalcountryeditionlanguage
2004-01-01
10.1016/j.mssp.2004.09.115http://hdl.handle.net/10447/30501