Search results for "Optoelectronics"
showing 10 items of 2306 documents
CMOS-compatible field effect nanoscale gas-sensor: Operation and annealing models
2008
Complete modelling of electrically controlled nanoscale gas sensors with Poisson, Wolkenstein, Fokker-Planck and continuity is presented. Based on a plausible Drift explanation we developed suitable models for sensitivity control and operational modes. An onset for CMOS-complying annealing procedures is given.
Detection and monitoring of carbon monoxide using cobalt corroles film on Love wave devices with delay line configuration
2011
Among specific sensitive materials synthesized for chemical sensor development, cobalt corrole have shown attractive capabilities for CO detection [1, 2]. In this paper, we investigate the possibility to exploit such materials to develop surface acoustic wave (SAW)-based sensors. We actually demonstrate that SAW devices using delay line configuration allow investigating the molecular recognition occurring in non-conductive sensing layers of cobalt corroles. We have monitored phase variations of SAW devices versus various CO concentrations. Moreover, a specific testing setup has been developed to precisely dose CO at low concentrations, to avoid any CO leakage in the environment, to systemat…
Achieving high effectiveQ-factors in ultra-high vacuum dynamic force microscopy
2010
The effective Q-factor of the cantilever is one of the most important figures-of-merit for a non-contact atomic force microscope (NC-AFM) operated in ultra-high vacuum (UHV). We provide a comprehensive discussion of all effects influencing the Q-factor and compare measured Q-factors to results from simulations based on the dimensions of the cantilevers. We introduce a methodology to investigate in detail how the effective Q-factor depends on the fixation technique of the cantilever. Fixation loss is identified as a most important contribution in addition to the hitherto discussed effects and we describe a strategy for avoiding fixation loss and obtaining high effective Q-factors in the forc…
Experimental evidence of high spatial confinement of elastic energy in a phononic cantilever
2021
We report on experimental high spatial confinement of elastic energy in a silicon phononic cantilever for which the quality factor of a higher-order flexural resonance is increased by a factor of 27 (from Q ∼ 80 to Q ∼ 2130) with the use of a three-row phononic crystal (PnC) strip. As shown by numerical simulations performed with the finite element method, the PnC both reduces anchor loss and confines elastic energy inside the cantilever. The PnC and the cantilever are fabricated with standard clean room techniques on a silicon on insulator substrate. Optical measurements of the out-of-plane displacements are performed with a laser scanning interferometer in a frequency range around 2 MHz.
Sensing of the Molecular Spin in Spin-Crossover Nanoparticles with Micromechanical Resonators
2019
In the past years, the use of highly sensitive silicon microelectromechanical cantilevers has been proposed as a tool to characterize the spin-crossover phenomenon by employing fast optical readout of the motion. In this work, Fe II -based spin-crossover nanoparticles of the well-known [Fe(Htrz) 2 (trz)](BF 4 ) complex wrapped with thin silica shells of different sizes will be studied by means of silicon microresonators. The silica shell will enhance its chemical stability, whereas the low thickness will allow a proper mechanical coupling between the cantilever and the spin-crossover core. To maximize the sensing of the spin-crossover phenomena, different cantilever geometries and flexural…
Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence
2007
The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecu…
Photosensitivity and second harmonic generation in chalcogenide arsenic sulfide poled glasses
2011
International audience; The present work investigates the photoinduced Second Harmonic Generation processes in thermally poled arsenic sulfide glasses. SHG Maker fringes patterns associated to SHG kinetic measurements about illumination and Raman spectroscopy have been conducted in order to bring new information which confirm the combined influence of charge carriers and mid-range glass structural modification on the poling and the photodarkening mechanisms.
Application of amorphous chalcogenide thin films in optical recording technologies
2005
A solid immersion holographic method for the recording of refractive-index and surface-relief modulated gratings with a period of 0.2 µm–1 µm in amorphous films of chalcogenide semiconductors As2S3 and As-S-Se has been developed and studied. The angular selectivity of holographic recording in amorphous chalcogenide thin films can be improved significantly by a decrease of grating period. The possibility to use the amorphous chalcogenide films as a media for holographic recording and storage of information with high density is discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Efficient wide band gap double cation – double halide perovskite solar cells
2017
In this work we study the band gap variation and properties of the perovskite compound Cs0.15FA0.85Pb(BrxI1−x)3 as a function of the halide composition, with the aim of developing an efficient complementary absorber for MAPbI3 in all-perovskite tandem devices. We have found the perovskite stoichiometry Cs0.15FA0.85Pb(Br0.7I0.3)3 to be a promising candidate, thanks to its band gap of approximately 2 eV. Single junction devices using this perovskite absorber lead to a maximum PCE of 11.5%, among the highest reported for solar cells using perovskites with a band gap wider than 1.8 eV.