Search results for "Optoelectronics"

Photoinduced charge transfer from Carbon Dots to Graphene in solid composite

2019

Abstract The emission in solid phase of Carbon Dots (CDs) deposited by drop-casting technique is investigated by means of micro-photoluminescence. Graphene and SiO2 are used as substrates, and the influence of their different nature – conductive or insulating – on the emission of CDs is highlighed. In particular, a systematic loss of efficiency in the emission of CDs on graphene is found, suggesting a CD-graphene interaction possibly due to a photoinduced electron transfer between the surface states of CDs and the conduction band of graphene. Finally, thanks to the negligible influence on CDs emission, SiO2 substrate is used as support to perform thermal processing of CDs in solid phase, sh…

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

2020

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash

Plasmonic nanostructures for light trapping in thin-film solar cells

2019

Abstract The optical properties of localized surface plasmon resonances (LSPR) sustained by self-assembled silver nanoparticles are of great interest for enhancing light trapping in thin film photovoltaics. First, we report on a systematic investigation of the structural and the optical properties of silver nanostructures fabricated by a solid-state dewetting process on various substrates. Our study allows to identify fabrication conditions in which circular, uniformly spaced nanoparticles are obtainable. The optimized NPs are then integrated into plasmonic back reflector (PBR) structures. Second, we demonstrate a novel procedure, involving a combination of opto-electronic spectroscopic tec…

Excitons in SiO2: a review

1992

Abstract In this paper, excitonic properties of crystalline and glassy SiO 2 are reviewed. Experimental spectroscopic data (optical absorption and reflection spectra, as well as spectra of luminescence and its excitation), luminescence decay kinetics at different temperatures, and photoelectric properties — photoconductivity and photoelectron emission — were used to determine excitons in SiO 2 . Information on migration of excitons was obtained on the basis of energy transport to impurity luminescence centers, the latter being detectors of quasiparticles. Determination of excitonic properties in glassy SiO 2 was based on the comparison of the observed phenomena in crystalline and glassy mat…

Effect of annealing on Co2FeAl0.5Si0.5thin films: A magneto-optical and x-ray absorption study

2011

A series of Al and MgO-capped Co${}_{2}$FeAl${}_{0.5}$Si${}_{0.5}$ epitaxial thin films grown on MgO with various levels of L2${}_{1}$ ordering was obtained by in situ annealing. The films were studied by means of x-ray absorption spectroscopy, x-ray magnetic circular dichroism (XMCD), magneto-optical Kerr effect magnetometry, and Brillouin light scattering. We find the anisotropy constants decrease, while the spin wave stiffness increases as the samples are annealed to higher temperatures. The magnetization as determined by Brillouin light scattering reveals a maximum value at intermediate annealing temperatures. Surprisingly, the orbital-to-spin-moment ratio (as seen from XMCD) is essenti…

Diffraction-efficiency oscillations in amorphous As_2S_3 films

1999

An experimental study of the holographic gratings recorded in nonannealed, thermally with time relaxed amorphous As2S3 films by 514.5-nm light in the presence of 632.8-nm readout light is carried out. The dependences of the maximal first-order diffraction efficiency on the holographic grating period was studied in a wide range of periods, from 0.40 to 70.0 µm. A peculiar oscillatory diffraction-efficiency temporal behavior occurring under certain conditions is reported. The obtained results are discussed in terms of photoinduced structural changes, relaxational structural changes, photoinduced anisotropy, and photoinduced recharging of the localized states in the bandgap. The diffraction-ef…

Model of holographic recording in amorphous chalcogenide films using subband-gap lightat room temperature

1997

The subband-gap light holographic recording in amorphous as-evaporated ${\mathrm{As}}_{2}$${\mathrm{S}}_{3}$ films at room temperature is experimentally studied. Properties are considerably different from those of usual holographic recording based on the band-gap light induced structural changes. The most important characteristic features of this nonpermanent recording include photoinduced refractive index increase, weak photobleaching, the absence of the photoinduced thickness changes, light polarization dependence, large exposures, holographic grating shifts during the exposure and a peculiar two maxima spatial frequency response. The first order diffraction efficiency up to 4.1% is achie…

Radiation-Induced Defect and Charge Accumulation and Thermostimulated Relaxation Processes in Al<sub>2</sub>O<sub>3</sub> Cry…

1997

Thermal conductivity of thermoelectric Al-substituted ZnO thin films

2013

ZnO:Al thin films with a low electrical resistivity were grown by magnetron sputtering on sapphire substrates. The cross-plane thermal conductivity (κ = 4.5 ± 1.3 W/mK) at room temperature is almost one order of magnitude lower than for bulk materials. The thermoelectric figure of merit ZT at elevated temperatures was estimated from in-plane power factor and the cross-plane thermal conductivity at room temperature. It is expected that the thermal conductivity drops with increasing temperature and is lower in-plane than cross-plane. Consequently, the thin film ZT is at least three times higher than for bulk samples at intermediate temperatures. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinh…

Capacitance-voltage characteristics of organic light-emitting diodes varying the cathode metal: Implications for interfacial states

2007

Capacitance-voltage $(C\text{\ensuremath{-}}V)$ characteristics of organic light-emitting diodes based on a polyphenylenevinylene have been measured by means of impedance spectroscopy. The effect of the metallic cathode (Au, Ag, Al, Mg, and Ba) was analyzed in the low-frequency region $(2\phantom{\rule{0.3em}{0ex}}\mathrm{Hz})$ of the capacitive response. The $C\text{\ensuremath{-}}V$ curves collapse into a single pattern in the low bias region, and exhibit a dependence on the cathode work function showing a crossover from positive to negative (inductive) values. The voltage corresponding to the onset of the inductive behavior shifts toward higher bias as the cathode work function increases…