Search results for "Optoelectronics"
showing 10 items of 2306 documents
Near infrared radio-luminescence of O2 loaded radiation hardened silica optical fibers: A candidate dosimeter for harsh environments
2014
We report on an experimental investigation of the infrared Radio-Luminescence (iRL) emission of interstitial O2 molecules loaded in radiation hardened pure-silica-core and fluorine-doped silica-based optical fibers (OFs). The O2 loading treatment successfully dissolved high concentrations of oxygen molecules into the silica matrix. A sharp luminescence at 1272 nm was detected when 2.5 cm of the treated OFs were irradiated with 10 keV X-rays. This emission originates from the radiative decay of the first excited singlet state of the embedded O2 molecules. The dose, dose-rate, and temperature dependencies of the infrared emission are studied through in situ optical measurements. The results s…
Luminescence mechanisms of defective ZnO nanoparticles.
2016
ZnO nanoparticles (NPs) synthesized by pulsed laser ablation (PLAL) of a zinc plate in deionized water were investigated by time-resolved photoluminescence (PL) and complementary techniques (TEM, AFM, μRaman). HRTEM images show that PLAL produces crystalline ZnO NPs in wurtzite structure with a slightly distorted lattice parameter a. Consistently, optical spectra show the typical absorption edge of wurtzite ZnO (Eg = 3.38 eV) and the related excitonic PL peaked at 3.32 eV with a subnanosecond lifetime. ZnO NPs display a further PL peaking at 2.2 eV related to defects, which shows a power law decay kinetics. Thermal annealing in O2 and in a He atmosphere produces a reduction of the A1(LO) Ra…
Degradation mechanisms in organic lead halide perovskite light-emitting diodes
2019
Organic–inorganic metal halide perovskites have attracted significant attention for low-cost, high-efficiency, color-pure light-emitting applications. However, as seen in many reports so-far, perovskite light-emitting diodes (PeLED) suffer from poor operational lifetime, limiting their practical use. The underlying degradation mechanism is a topic of crucial importance. Here, the degradation mechanisms of methylammonium lead bromide based PeLED are investigated. When the PeLED is electrically biased, there is an initial raise in the luminance followed by a rapid reduction in luminance and current density. Microscopic studies reveal the formation of micrometer-sized spots that are photolumin…
Near-IR- and UV-femtosecond laser waveguide inscription in silica glasses
2019
The influence of laser parameters on silica based waveguide inscription is investigated by using femtosecond laser pulses at 1030 nm (near-IR) and at 343 nm (UV). Negative phase contrast microscopy technique is used to measure the refractive index contrast for different photo-inscribed waveguides and shows the effects of both laser wavelength and scanning speed. In particular, UV photons have a higher efficiency in the waveguide production process as also confirmed by the lower optical losses at 1550 nm in these waveguides. These measurements are combined with micro-Raman and photoluminescence techniques, highlighting that laser exposure induces both structural modification of the silica an…
High Photoluminescence Quantum Yields in Organic Semiconductor-Perovskite Composite Thin Films.
2017
One of the obstacles towards efficient radiative recombination in hybrid perovskites is a low exciton binding energy, typically in the orders of tens of meV. It has been shown that the use of electron-donor additives can lead to a substantial reduction of the non-radiative recombination in perovskite films. Herein, the approach using small molecules with semiconducting properties, which are candidates to be implemented in future optoelectronic devices, is presented. In particular, highly luminescent perovskite-organic semiconductor composite thin films have been developed, which can be processed from solution in a simple coating step. By tuning the relative concentration of methylammonium l…
Evaluation of the UV Optical Transmission Degradation of Gamma-ray Irradiated Optical Fibers
2007
This paper highlights our recent results on the investigation of the transmission attenuation in the UV spectral range induced by gamma-ray irradiation of optical fibers, and the comparison with results obtained by electron paramagnetic resonance (EPR) and photoluminescence measurements.
UV light induced luminescence processes in AlN nanotips and ceramics
2005
UV induced luminescence properties of AlN (Eg = 6.2 eV) have been studied for AlN nanotips and AlN ceramics, using methods of photoluminescence, optically stimulated luminescence and thermoluminescence. In both types of objects the main luminescence band, which appears in prompt and stimulated emission spectra around 400 nm, arises due to presence of oxygen-related defects. The main difference between AlN nanotips and AlN ceramics is observed in excitation spectra and TL properties. Basing on the experimental results it is assumed that several different energy transfer mechanisms occur in AlN. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Efficient Photo- and Electroluminescence by Trap States Passivation in Vacuum-Deposited Hybrid Perovskite Thin Films
2018
Methylammonium lead iodide (MAPI) has excellent properties for photovoltaic applications, although it typically shows low photoluminescence quantum yield. Here, we report on vacuum-deposited MAPI perovskites obtained by modifying the methylammonium iodide (MAI) to PbI2 ratio during vacuum deposition. By studying the excitation density dependence of the photoluminescence lifetime, a large concentration of trap states was deduced for the stoichiometric MAPI films. The use of excess MAI during vacuum processing is capable of passivating these traps, resulting in luminescent films which can be used to fabricate planar light-emitting diodes with quantum efficiency approaching 2%.
Non-resonant Raman spectroscopy of individual ZnO nanowires via Au nanorod surface plasmons
2016
We present a non-resonant Raman spectroscopy study of individual ZnO nanowires mediated by Au nanorod surface plasmons. In this approach, selective excitation of the plasmonic oscillations with radiation energy below the semiconductor bandgap was used to probe surface optical modes of individual ZnO nanowires without simultaneous excitation of bulk phonons modes or band-edge photoluminescence. The development of a reproducible method for decoration of nanowires with colloidal Au nanorods allowed performing an extensive statistical analysis addressing the variability and reproducibility of the Raman features found in the hybrid nanostructures. An estimated field enhancement factor of 103 was…
Thermal Creation of Defects in GaTe
2008
Photoluminescence spectra of as-grown and annealed GaTe single crystals in the 0.7–1.8 eV range have been analyzed at different temperatures. Annealing up to 200 °C produces an increase in the recombination intensity of an excitonic characteristic. The annealing at 400 °C generates an intense optically active recombination in the infrared region (0.76 eV). The thermal generation of defects is possible, owing to the low melting temperature of GaTe (800 °C).