Search results for "Passivation"
showing 10 items of 91 documents
Investigation of pitting resistance of titanium based on a modified point defect model
2011
Abstract The pitting resistance of titanium was studied under potential control in solutions containing chloride ions. The results evidenced that Cl − concentration had an effect on the metastable pitting intensity, but no significant influence on the uniform corrosion. XPS characterization revealed that some Cl − ions were present in the outer hydroxide layer, but few in the inner oxide layer, indicating that the inner oxide layer was impervious to Cl − ions. A cation–anion-vacancy condensation mechanism was considered for pit initiation based on the point defect model (PDM). The experimental results analyzed by the charge integration technique were in agreement with the derived relations.
Evaluation of metastable pitting on titanium by charge integration of current transients
2010
Abstract The metastable pitting of titanium has been studied under potentiostatic control in solutions containing chloride ions. An approach based on the charge integration of current transients was proposed for a quantitative determination of metastable pitting. A pit density (dmpit) was defined as the number of metastable pits per unit area per unit time (cm−2 h−1) with a typical size, instead of a size distribution. The calculated dmpit of titanium at 0.5 VSCE in 0.6 M NaCl was about 1.0 × 103 cm−2 h−1 with a typical radius of 0.12 μm. An exponential potential dependence of dmpit was obtained through the integration approach.
Electrochemical impedance spectroscopy for studying passive layers on steel rebars immersed in alkaline solutions simulating concrete pores
2007
Present paper deals with the use of the electrochemical impedance spectroscopy to identify different processes in the passive layer growth over steel rebar surface immersed in an alkaline media simulating the concrete pore solution. Two cases have been considered: a passive layer spontaneously grown in a high alkaline media and a passive layer assisted by the application of an anodic potential in the same media. The application of electric equivalent circuits allows distinguishing between the different mechanisms occurring in this passive layer when grows in different conditions. An electric equivalent circuit with two RC loops connected in parallel is often used for fitting the EIS diagram…
Electrochemically-induced TiO2 incorporation for enhancing corrosion and tribocorrosion resistance of PEO coating on 7075 Al alloy
2018
Abstract 7075 Al alloy was PEO-treated in a silicate based electrolyte containing 3 g l-1 potassium titanyl oxalate using unipolar and bipolar pulsed current waveforms. The coating formed by the bipolar waveform with the wider cathodic pulses showed volcano-like surface morphology with no evidence of large pores at the metal/coating interface. It revealed the highest corrosion performance due to the synergistic effect of TiO2 incorporation and structural/morphological features along with a better passivation behavior indicating no pitting susceptibility. For this coating, the tribocorrosion tests showed no potential drop during sliding under 1 N with the lowest volume loss of 0.022 mm3.
Influence of an elastic stress on the conductivity of passive films
2001
Abstract The electrochemical impedance was measured over a large range of frequency and under straining condition in sodium chloride solution. The Mott-Schottky analysis, performed at high frequency, appears as very useful method to study the effect of an elastic stress on the capacitance values. The results obtained indicate that the semi-conductive properties of passive films formed on a type 316 L stainless steel (SS) are not markedly modified by an elastic stress when applied after ageing. In contrast, passive films formed in the presence of elastic stress have a higher donor and acceptor concentration than those formed in a stress-free state, suggesting that the passive film conductivi…
From Gold Nanoseeds to Nanorods: The Microscopic Origin of the Anisotropic Growth
2016
Directly manipulating and controlling the size and shape of metal nanoparticles is a key step for their tailored applications. In this work, molecular dynamics simulations were applied to understand the microscopic origin of the asymmetric growth mechanism in gold nanorods. Different factors influencing the growth were selectively included in the models to unravel the role of the surfactants and ions. In the early stage of the growth, when the seed is only a few nanometers large, a dramatic symmetry breaking occurs as the surfactant layer preferentially covers the (100) and (110) facets, leaving the (111) facets unprotected. This anisotropic surfactant layer in turn promotes anisotropic gro…
Tuning Charge Carrier Dynamics and Surface Passivation in Organolead Halide Perovskites with Capping Ligands and Metal Oxide Interfaces
2018
Organolead halide perovskites have emerged as exciting optoelectronic materials but a complete understanding of their photophysical properties is still lacking. Here, a morphological series of methylammonium lead bromide (MAPbBr 3 ) perovskites are studied by transient optical spectroscopies over eight orders of magnitude in timescale to investigate the effect of nanostructuring and surface states on the charge carrier dynamics. The sample preparation route and corresponding morphology changes influence the position of the optical features, recombination dynamics, excitation fluence dependence, and dramatically impact surface trap passivation. Growth of the perovskite layer in the presence …
New process of silicon carbide purification intended for silicon passivation
2017
Abstract In this work, we report on a new, efficient and low cost process of silicon carbide (SiC) powder purification intended to be used in photovoltaic applications. This process consists on the preparation of porous silicon carbide layers followed by a photo-thermal annealing under oxygen atmosphere and chemical treatment. The effect of etching time on impurities removal efficiency was studied. Inductively coupled plasma atomic emission spectrometry (ICP-AES) results showed that the best result was achieved for an etching time of 10 min followed by gettering at 900 °C during 1 h. SiC purity is improved from 3N (99.9771%) to 4N (99.9946%). Silicon carbide thin films were deposited onto s…
HCl gas gettering for crystalline silicon thin film solar cells
2011
Crystalline silicon thin film (cSiTF) solar cells could be an attractive alternative for standard silicon solar cells. Only a small amount of the expensive high purity silicon is needed for the epitaxial deposition on a low-cost silicon substrate made from e.g. metallurgical grade (MG) or upgraded metallurgical grade (UMG) silicon. The resulting product is called epitaxial wafer equivalent (EpiWE) because it can be processed in a standard wafer cell production. MG-Si and UMG-Si still contain a huge amount of metallic impurities. These impurities have to be removed by gettering methods in order to prevent diffusion into the highly pure active silicon layer during the high-temperature deposit…
Minority Carrier Lifetime Variations in Multicrystalline Silicon Wafers with Temperature and Ingot Position
2017
The minority carrier lifetimes of multicrystalline silicon wafers are mapped using microwave photoconductive decay for different temperatures and ingot positions. Wafers from the top of the ingot display larger areas with lower lifetimes compared to wafers from the bottom. The lifetimes of low-lifetime areas are found to increase with the temperature, while the lifetimes of some high-lifetime areas decrease or remain unchanged. The relative improvement of the low-lifetime areas is considerably larger than the relative change in the high-lifetime areas. We suggest that the above-mentioned observations explain, at least partially, why previous studies have found the relative temperature coeff…