Search results for "Photolithography"
showing 10 items of 33 documents
Photonic-crystal silicon-nanocluster light-emitting device
2006
We report on enhanced light extraction from a light-emitting device based on amorphous silicon nanoclusters, suitable for very-large-scale integration, and operating at room temperature. Standard low-cost optical lithography is employed to fabricate a two-dimensional photonic crystal onto the device. We measured a vertical emission with the extracted radiation enhanced by over a factor of 4, without the aid of any buried reflector. These achievements demonstrate that a cost-effective exploitation of photonic crystals is indeed within the reach of semiconductor industry and open the way to a new generation of nanostructured silicon devices in which photonic and electronic functions are integ…
Nonstoichiometric silica mask to fabricate reverse proton-exchange waveguides in lithium niobate crystals
2004
Producing channel waveguides requires a photolithographic mask, but the standard technique of using thermally evaporated metal films for proton exchange has proved to be unsuitable for withstanding the rather aggressive process of reverse proton exchange. We report the fabrication of a nonstoichiometric silica mask by ion-plating plasma-assisted deposition. This mask is strong enough to resist both direct and reverse proton exchange and is also compatible with anisotropic dry etching for patterning the mask and with electric field poling. Our technique is a practical alternative to the use of SiO2 sputtered masks.
Investigations on the c-axis transport properties of YBa/sub 2/Cu/sub 3/O/sub 7-δ//PrBa/sub 2/Cu/sub 3/O/sub 7-δ/ thin film superlattices
1997
In this paper we report on the c-axis transport properties of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta///PrBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// superlattices. We describe the preparation, characterisation and patterning of thin film superlattices into suitable mesa structures via standard photolithography. Resistive measurements were carried out which point towards an inhomogenous current distribution in the normal state resistance. Below T/sub c/, the c-axis properties determine the temperature dependent resistance. Resonant tunneling is observed with no Josephson current.
Wavelength-selective directional coupling with dielectric-loaded plasmonic waveguides
2009
International audience; We consider wavelength-selective splitting of radiation using directional couplers (DCs) formed by dielectric-loaded surface-plasmon-polariton waveguides (DLSPPWs). The DCs were fabricated by depositing subwavelength-sized polymer ridges on a gold film using large-scale UV photolithography and characterized at telecommunications wavelengths with near-field microscopy. We demonstrate a DLSPPW-based 45-mu m-long DC comprising 3 mu m offset S bends and 25-mu m-long parallel waveguides that changes from the "through" state at 1500 nm to 3 dB splitting at 1600 nm, and show that a 50.5-mu m-long DC should enable complete separation of the radiation channels at 1400 and 162…
MATERIALS AND PROCESSING ISSUES FOR THE MANUFACTURING OF INTEGRATED PASSIVE AND ACTIVE DEVICES ON FLEXIBLE SUBSTRATES
2008
Plast_ICs is a Public/Private Laboratory funded by Italian Government aimed to build a novel technological platform for the development of flexible electronics, mainly, but not solely, based on thin inorganic films. Integration of different functions, on single and/or multiple plastic foils, to generate a smart system is the final goal of the project. The building blocks of the platform will be presented, starting from the different plastic substrates characterization, going through the development of active devices, such as thin-film- transistors, and passive devices, like thin-film- resistors, capacitors, inductors. Fully inorganic elementary devices, based on optical patterning and in va…
<title>Advances in silica-based glasses for UV and vacuum UV laser optics</title>
2003
The origins of pre-existing and laser-induced ultraviolet (UV) and vacuum ultraviolet (VUV) optical absorption in state-of-the-art glassy silicon dioxide and the ways to improve it are reviewed. The main causes of pre-existing absorption in UV/VUV are oxygen vacancies, hydroxyl (silanol) groups, and strained bonds/localized states due to glassy disorder. The main absorption bands induced by UV/VUV excimer lasers are due to oxygen vacancies and due to silicon and oxygen dangling bonds (E'-centers and non-bridging oxygen hole centers, respectively). The optimized glasses are achieved via an intricate balance between a good stoichiometry, use of network modifiers (F or OH) to reduce the number…
Ag and Au/DNQ-novolac nanocomposites patternable by ultraviolet lithography: a fast route to plasmonic sensor microfabrication
2010
In this work we report on a method to synthesize Ag–Au nanoparticles/polymer nanocomposite patterns by UV lithography. The photoresists are based on DNQ-novolac as the polymer matrix, and Ag(I) and Au(III) salts as the nanoparticle precursors. After UV lithography, silver and gold nanoparticles are in situ synthesized inside the polymer patterns during a post bake. The resulting structured nanocomposite shows a characteristic absorbance spectrum related to the plasmon frequency of the synthesized noble metal NPs. This method represents a fast, simple and low-cost approach to the formation of extended polymer patterns with embedded silver or gold NPs. Moreover, it is a mechanism to position …
Toward Photopatternable Thin Film Optical Sensors Utilizing Reactive Polyphenylacetylenes
2013
Substituted polyphenylacetylenes featuring reactive pentafluorophenyl (PFP) ester moieties are synthesized. Parts of the reactive PFP groups are then converted with a mono ortho-nitrobenzyl-protected diamine in variable ratios. Thin films are prepared from these copolymers and irradiated with UV light (λ = 365 nm), resulting in crosslinking of the irradiated areas and hence enabling a photopatterning. We found that during the photocrosslinking process, the excess of PFP ester moieties is stable and remained intact, enabling a subsequent post-polymerization modification step with amines. Noteworthy, this subsequent modification with amines results in a dramatically shift in the UV-vis absorp…
Creating Defined 3-D Defects Inside an Opaline Ormocer® Matrix with Two-Photon Lithography
2007
The creation of defined structures inside a synthetic opal is a key step toward applications in optics, where control of the propagation of light inside a photonic crystal is necessary. In a previous paper, we described the nanostructuring of Ormocer® to form inverse opals (Lange et al., Macromol. Rapid Commun. 2006, 27, 1746). Here, we report an application for this robust replica process in which defects can be directly produced within the PC by two-photon lithography. The holes of an inverse opal structure are first filled with a resin of similar refractive index. In this transparent material, polymerization can be initiated at defined places via two-photon lithography. After removal of …
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
2017
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is…