Search results for "Photoluminescence"
showing 10 items of 811 documents
Carrier localization effect in polarized InGaN multiple quantum wells
2005
Carrier localization effects in polarized InGaN/GaN multiple quantum wells (MQWs) were investigated as a function of well width, d, and In content, x. Using photoreflectance (PR), photoluminescence (PL), PL excitation (PLE), selective excitation of PL, PL excitation power, and time-resolved PL spectroscopy, the dominance of the localization effect against the built-in field effect on carrier recombination dynamics in InxGa1–xN MQWs of different well width (d = 2.0–4.0 nm, x ≈ 0.15) and In content (x ≈ 0.22–0.27, d = 2.5 nm) was revealed. Based on the modeling of the PL spectra by Monte Carlo simulation of exciton hopping and the spectroscopic reference provided by PR, increased In content a…
Resonant Rayleigh scattering in quantum well structures
1996
Abstract We report continuous wave experiments on resonant Rayleigh scattering (RRS) performed on high quality GaAs AlGaAs quantum well structures. The simultaneous measurement of the resonant Rayleigh scattering and of the photoluminescence excitation (PLE) allows us to resolve very small differences between the two spectra. We show that, even in very good samples, there is a small but detectable Stokes shift of the RRS profile with respect to the PLE. It is also found that the RRS profile has a smaller linewidth and is sensitive to bound exciton transitions which are not detectable in the PLE. We compare our data with previous findings and discuss possible origins of the Stokes shift.
Exciton kinetics and luminescence in disordered InxGa 1-xP/GaAs quantum wells
2003
Trabajo presentado en el 7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 2003, celebrado en Karlsruhe (Alemania), del 23 al 28 de febrero de 2003
Investigation of the influence of light illumination on the characteristics of CdZnTe detectors
2011
The spectral response of optical transmittance, spectrometry characteristics, output signal shapes and leakage currents of CdZnTe detectors with plane parallel electrodes under illumination with light within wavelength region of 400 – 1100 nm are presented.
Photoluminescence at the ground-state level anticrossing of the nitrogen-vacancy center in diamond: A comprehensive study
2021
Physical review / B 103(3), 035307 (2021). doi:10.1103/PhysRevB.103.035307
Microscopic carrier dynamics in quantum wells modulated by high-frequency lateral fields
2002
Abstract We have investigated the dynamics of photogenerated carriers in GaAs quantum wells under the influence of high-frequency fields produced by metal gratings and by surface acoustic waves (SAW's) using spatially and time-resolved photoluminescence (PL). The frequency and phase of the PL oscillations induced by the high-frequency field yield information about the spatial distribution of the carriers and, in the case of SAW's, about the band-gap modulation induced by the SAW strain.
Photon bunching of the nonlinear photoluminescence emitted by plasmonics metals
2021
International audience; In this report, we investigate the statistical temporal distribution of nonlinear upconverted photoluminescence emitted by gold and silver nanostructures excited by focused near-infrared laser pulses. We systematically observe a clear signature of photon bunching regardless of the nano-object's geometry, material's crystalline arrangement, and electronic band structure. The similarity of the data obtained across very different plasmonic objects confirms that these types of nonlinear radiation share a common chaotic origin and result from a collection of emitters. The correlation of photons at a picosecond time scale released by nanoscale nonlinear sources of broadban…
18O-labeled interstitial oxygen molecules as probes to study reactions involving oxygen-related species in amorphous SiO2
2012
Abstract Isotope labeling has been widely used to study reactions involving oxygen species in amorphous SiO 2 ( a -SiO 2 ). This article briefly describes recent progress in 18 O labeling techniques to study reactions involving interstitial oxygen molecules (O 2 ), which is one of the most important excess oxygen species in a -SiO 2 . The primary focus will be on the combination of the 18 O labeling with photoluminescence spectroscopy, which enables sensitive and selective detection of interstitial O 2 . Advantages of this method and results of evaluation of oxygen exchange between interstitial O 2 and the Si―O network of a -SiO 2 will be presented.
Room-temperature polariton luminescence from a bulk GaN microcavity
2006
We report strong exciton-photon coupling at room temperature in a hybrid high quality bulk 3 lambda/2 GaN cavity with a bottom lattice-matched AlInN/AlGaN distributed Bragg reflector through angle-resolved polarized photoluminescence (PL). Coupling of the optically active free excitons (X-A, X-B, and X-C) to the cavity mode is demonstrated, with their contribution to the PL spectra varying with polarization. Under TE polarization, exciton oscillator strengths for X-A and X-B are about one order of magnitude larger than in bulk GaAs. Photoluminescence exhibits a strong bottleneck effect despite its thermal lineshape.
Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics
2019
Optical studies of single self-assembled semiconductor quantum dots (QDs) have been a topic of intensive investigation over the past two decades. Due to their solid-state nature, their electronic and optical emission properties are affected by the particular crystal structure as well as many-body-carrier interactions and dynamics. In this work, we use a master equation for microstates (MEM) model to study the carrier capture and escape from single QDs under optical nonresonant excitation and under the influence of a two-dimensional (2D) carrier reservoir (the wetting layer). This model reproduces carrier dynamics from power-dependent and time-resolved microphotoluminescence experiments . Du…