Search results for "Point defect"

Temperature dependence of the absorption properties of silanol groups in amorphous SiO2: Are silanol groups organized in clusters?

2011

Bi3+doping in 1D ((CH3)3SO)PbI3: A model for defect interactions in halide perovskites

2022

The recently described monodimensional hybrid pseudo-perovskite ((CH3)3SO)PbI3 exhibits complete Pb2+/Bi3+ miscibility in the B site. Heterovalent substitution imposes that charge-compensating defects are introduced in the lattice as well. This paper reports the energetics of point defects and the interaction between charge-compensating defects that occur upon Bi3+ doping in ((CH3)3SO)PbI3. Periodic DFT simulations were employed to analyze the formation energy of Pb2+ vacancies, (CH3)3SO+ vacancies, iodide vacancies, or the insertion of interstitial iodide ions. Solid solutions with a large Bi3+ content were modeled considering different charge compensation defects (Pb2+ vacancies, (CH3)3SO…

Structural properties of the range-II- and range-III order in amorphous-SiO2 probed by electron paramagnetic resonance and Raman spectroscopy

2010

In the present work we report an experimental investigation by electron paramagnetic resonance spectroscopy on the hyperfine structure of the E. point defect, probing the local arrangement of the network (range-II order), and by Raman spectroscopy on the D 1 and D 2 lines, probing mean features of the network (range-III order). Our studies, performed on a-SiO 2 samples thermally treated at 1000 °C in air for different time durations, show that changes of the hyperfine structure and of the D 1 and D 2 lines occur in a correlated way. These results give strong evidence that the range-II and range-III order properties are intimately related to each other and that these properties are determine…

Structural modifications induced by electron irradiation in SiO2 glass: Local densification measurements

2009

We report a study on the structural modifications induced in amorphous silicon dioxide (a-SiO2) by electron irradiation in the dose range from 1.2?103 to 5?106?kGy. This study has been performed by investigating the properties of the 29Si hyperfine structure of the E '? center by electron paramagnetic resonance (EPR) spectroscopy. Our data suggest that the structural modifications induced by irradiation take place through the nucleation of confined high-defective and densified regions statistically dispersed into the whole volume of the material. In addition, we have estimated that in the high dose limit (D?105?kGy) the degree of densification associated to the local (within the defective r…

β-ray irradiation effects on silica nanoparticles

2015

By electron paramagnetic resonance (EPR) measurements, we examine the amplitude of the signal typically due to a combination of NBOHC (Non Bridging Hole Center) and POR (Peroxy Radical) defects induced by β-ray irradiation (from 1.2 to 1200 MGy) in silica nanoparticles with diameter ranging from 7 to 20 nm. Our data indicate that the signal line-shapes recorded at different doses is quite independent from the particles sizes and from the dose. Furthermore, for each considered nanoparticles size, the concentration of defects is also almost constant with respect to dose, and it does not change significantly if measured after 2 or 9 months from the irradiation. By contrast, we observed that th…

Nitrogen interstitial defects in silicon. A quantum mechanical investigation of the structural, electronic and vibrational properties

2019

The vibrational features of eight interstitial nitrogen related defects in silicon have been investigated at the first principles quantum mechanical level by using a periodic supercell approach, a hybrid functionals, an all electron Gaussian type basis set and the Crystal code. The list includes defects that will be indicated as Ni (one N atom forming a bridge between two Si atoms), Ni-Ns (one interstitial and one substitutional N atom linked to the same Si atom), Ni-Ni (two Ni defects linked to the same couple of silicon atoms) and Ni-Sii-Ni (two Ni defects linked to the same interstitial silicon atom). Four 〈0 0 1〉 split interstitial (dumbbell) defects have also been considered, in which …

Luminescence from nearly isolated surface defects in silica nanoparticles

2015

A structured emission/excitation pattern, proper of isolated defects, arises in a vacuum from silica nanoparticles. The luminescence, centered around 3.0-3.5 eV, is characterised by a vibronic progression due to the phonon coupling with two localised modes of frequency  ∼1370 cm(-1) and  ∼360 cm(-1), and decays in about 300 ns at 10 K. On increasing the temperature, the intensity and the lifetime decrease due to the activation of a non-radiative rate from the excited state. Concurrently, the temperature dependence of the lineshape evidences the low coupling with non-localised modes of the matrix (Huang-Rhys factor S ~ 0.2) and the poor influence of the inhomogeneous broadening. These findin…

Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure

2021

This research was funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540) as well as by the Latvian research council via the Latvian National Research Program under the topic ?High-Energy Physics and Accelerator Technologies?, Agreement No: VPP-IZM-CERN-2020/1-0002 for A.I. Popov. In addition, J. Purans is grateful to the ERAF project 1.1.1.1/20/A/057 while A. Platonenko was supported by Latvian Research Council No. LZP-2018/1-0214. The authors thank A. Lushchik and M. Lushchik for many useful discussions. The research was (partly) performed in the Institute of Solid State Physics, University of Latvia ISSP UL. ISSP UL as…

Intrinsic Point Defects in Silica for Fiber Optics Applications

2021

Due to its unique properties, amorphous silicon dioxide (a-SiO2) or silica is a key material in many technological fields, such as high-power laser systems, telecommunications, and fiber optics. In recent years, major efforts have been made in the development of highly transparent glasses, able to resist ionizing and non-ionizing radiation. However the widespread application of many silica-based technologies, particularly silica optical fibers, is still limited by the radiation-induced formation of point defects, which decrease their durability and transmission efficiency. Although this aspect has been widely investigated, the optical properties of certain defects and the correlation betwee…

First Principles Calculations of Atomic and Electronic Structure of TiAl3+- and TiAl2+-Doped YAlO3

2021

In this paper, the density functional theory accompanied with linear combination of atomic orbitals (LCAO) method is applied to study the atomic and electronic structure of the Ti3+ and Ti2+ ions substituted for the host Al atom in orthorhombic Pbnm bulk YAlO3 crystals. The disordered crystalline structure of YAlO3 was modelled in a large supercell containing 160 atoms, allowing simulation of a substitutional dopant with a concentration of about 3%. In the case of the Ti2+-doped YAlO3, compensated F-center (oxygen vacancy with two trapped electrons) is inserted close to the Ti to make the unit cell neutral. Changes of the interatomic distances and angles between the chemical bonds in the de…