Search results for "Power electronic"
showing 10 items of 91 documents
Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
2021
In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …
Assessing Radiation Hardness of SIC MOS Structures
2018
It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…
Detection of Partial Discharges at Square Shaped Voltages
2018
Due to the wide use of electronic converters and the introduction of new powerful power electronics devices, the input waveforms most often used are becoming much different than the traditional power frequent sinusoidal one. In High Voltage (HV) apparatus particularly, this condition can increase the stress on the insulation systems that may lower the reliability of the whole power grid. This type of input voltage, often showing an increased voltage gradient, causes problems in the Partial Discharge (PD) measurement setup and acquisition systems, also due to the increased harmonic content. In this paper, the main aim is to discuss how to suitably approach the measurement technique of PDs at…
Frequency constrained optimal Power Flow based on Glow-worm Swarm Optimization in Islanded Microgrids
2015
This work presents an application of a swarm optimization method to solve the optimal power flow problem taking into account the constraints of frequency and line ampacity in three-phase islanded Microgrids. Each generation unit is equipped with a Power Electronics Interface. In the considered formulation, the droop control parameters are considered as variables to be adjusted by a higher control level, while the frequency is kept in rated bounds. Another typical constraint for OPF formulation, the max ampacity of each line, is also considered. Two case studies with different dimensions and electrical features have been considered and the obtained results show the efficiency of the proposed…
Embedding Monitoring Systems for Cured-In-Place Pipes
2017
This paper proposes a non-intrusive electrical measurement system for monitoring some relevant parameters in pipeline systems. Temperature and flow-rate are monitored, using MEMS sensors. The flow-rate is evaluated by measuring pipe vibration, with a 3 axis accelerometer, induced by turbulence when fluid flows within the tube. The sensors are embedded, during the curing process of the cured-in-place pipes, in the pipes wall making the system suitable to be installed in renewed or new pipeline. The first experimental results show that it may be possible to obtain, at low-cost, a fully monitored distribution network.
Voltage Source Multilevel Inverters With Reduced Device Count: Topological Review and Novel Comparative Factors
2021
Multilevel inverters (MLIs) have gained increasing interest for advanced energy-conversion systems due to their features of high-quality produced waveforms, modularity, transformerless operation, voltage, and current scalability, and fault-tolerant operation. However, these merits usually come with the cost of a high number of components. Over the past few years, proposing new MLIs with a lower component count has been one of the most active topics in power electronics. The first aim of this article is to update and summarize the recently developed multilevel topologies with a reduced component count, based on their advantages, disadvantages, construction, and specific applications. Within …
Quasi‐digital front‐ends for current measurement in integrated circuits with giant magnetoresistance technology
2014
In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level si…
Linear Non Linear Digital control for DC/DC Converters with fast transient response PARTE II
2009
This article presents a digital control that improves the stability of the system, solves the problem of the limit cycle, shortens the recovery time and limits the overcoming of the rectified output voltage. The digital linear-nonlinear control function for DC / DC converters is described. The simulation model in the mixed environment of matlab-simulink / active -hdl is described. Preliminary results of the preliminary hardware test on a step-down-phase converter are presented and simulation and experimental results are also presented.
Linear Non Linear Digital control for DC/DC Converters with fast transient response PARTE I
2009
This article presents a digital control that improves the stability of the system, solves the problem of the limit cycle, shortens the recovery time and limits the overcoming of the rectified output voltage. Describes the linear digital nonlinear control function for DC / DC converters. The simulation model in the mixed environment of matlab-simulink / active -hdl is described. Preliminary results of the preliminary hardware test on a step-down-phase converter are presented and simulation and experimental results are also presented.