Search results for "Quantum efficiency"

showing 10 items of 92 documents

Donor/Acceptor Heterojunction Organic Solar Cells

2020

The operation and the design of organic solar cells with donor/acceptor heterojunction structure and exciton blocking layer is outlined and results of their initial development and assessment are reported. Under halogen lamp illumination with 100 mW/cm2 incident optical power density, the devices exhibits an open circuit voltage VOC = 0.45 V, a short circuit current density JSC between 2 and 2.5 mA/cm2 with a fill factor FF &asymp

Materials scienceOrganic solar cellComputer Networks and Communicationslcsh:TK7800-836002 engineering and technology010402 general chemistrySettore ING-INF/01 - Elettronica01 natural scienceslaw.inventionorganic photovoltaicexciton blocking layerdonor/acceptor heterojuntionlawElectrical and Electronic Engineeringbusiness.industryOpen-circuit voltagelcsh:ElectronicsEnergy conversion efficiencyorganic solar cellsHeterojunction021001 nanoscience & nanotechnologyAcceptor0104 chemical sciencesHalogen lampHardware and ArchitectureControl and Systems EngineeringOrganic solar celllifetime and degradationSignal ProcessingOptoelectronicsQuantum efficiencyorganic photovoltaics0210 nano-technologybusinessShort circuitElectronics
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Self-assembled hierarchical nanostructured perovskites enable highly efficient LEDs via an energy cascade

2018

Metal halide perovskites have established themselves as extraordinary optoelectronic materials, exhibiting promise for applications in large area illumination and displays. However, low luminescence, low efficiencies of the light-emitting diodes (LEDs), and complex preparation methods currently limit further progress towards applications. Here, we report on a new and unique mesoscopic film architecture featuring the self-assembly of 3D formamidinium lead bromide (FAPbBr3) nanocrystals of graded size, coupled with microplatelets of octylammonium lead bromide perovskites that enables an energy cascade, yielding very high-performance light-emitting diodes with emission in the green spectral re…

Materials sciencePhotoluminescence02 engineering and technologyEnergy Cascade010402 general chemistry7. Clean energy01 natural scienceslaw.inventionlawEnvironmental ChemistryPerovskitesDiodePerovskite (structure)Mesoscopic physicsRenewable Energy Sustainability and the Environmentbusiness.industry021001 nanoscience & nanotechnologyPollution0104 chemical sciencesFormamidiniumNuclear Energy and EngineeringOptoelectronicsQuantum efficiency0210 nano-technologybusinessLuminescenceLight-emitting diodeEnergy & Environmental Science
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Efficient Photo- and Electroluminescence by Trap States Passivation in Vacuum-Deposited Hybrid Perovskite Thin Films

2018

Methylammonium lead iodide (MAPI) has excellent properties for photovoltaic applications, although it typically shows low photoluminescence quantum yield. Here, we report on vacuum-deposited MAPI perovskites obtained by modifying the methylammonium iodide (MAI) to PbI2 ratio during vacuum deposition. By studying the excitation density dependence of the photoluminescence lifetime, a large concentration of trap states was deduced for the stoichiometric MAPI films. The use of excess MAI during vacuum processing is capable of passivating these traps, resulting in luminescent films which can be used to fabricate planar light-emitting diodes with quantum efficiency approaching 2%.

Materials sciencePhotoluminescencePassivationbusiness.industryQuantum yield02 engineering and technologyElectroluminescence010402 general chemistry021001 nanoscience & nanotechnology7. Clean energy01 natural sciences0104 chemical sciencesVacuum depositionOptoelectronicsQuantum efficiencyGeneral Materials ScienceThin film0210 nano-technologybusinessMaterialsCèl·lules fotoelèctriquesPerovskite (structure)
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2015

Two novel charged organic thermally activated delayed fluorescence (TADF) emitters, 1 and 2, have been synthesized. Their TADF behavior is well-supported by the multiexponential decay of their emission (nanosecond and microsecond components) and the oxygen dependence of the photoluminescence quantum yields. Spin-coated electroluminescent devices have been fabricated to make light-emitting electrochemical cells (LEECs) and organic light-emitting diodes (OLEDs). The first example of a non-doped charged small organic molecule LEEC is reported and exhibited an external quantum efficiency (EQE) of 0.39% using 2. With a multilayer architecture, a solution-processed OLED device using neat 2 as the…

Materials sciencePhotoluminescencebusiness.industryGeneral Chemical EngineeringGeneral ChemistryNanosecondElectroluminescenceFluorescenceMicrosecondMaterials ChemistryOLEDOptoelectronicsQuantum efficiencybusinessDiodeChemistry of Materials
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Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors

2012

We report a systematic study of time-resolved and power-dependent photoresponse in high-efficiency germanium quantum dot photodetectors (Ge-QD PDs), with internal quantum efficiencies greater than 100 over a broad wavelength, reverse bias, and incident power range. Turn-on and turn-off response times (τ on and τ off) are shown to depend on series resistance, bias, optical power, and thickness (W QD) of the Ge-QD layer, with measured τ off values down to ∼40 ns. Two different photoconduction regimes are observed at low and high reverse bias, with a transition around -3 V. A transient current overshoot phenomenon is also observed, which depends on bias and illumination power. © 2012 American …

Materials sciencePhotoresponseReverse biaGeneral Physics and Astronomychemistry.chemical_elementPhotodetectorGermaniumOptical powerPhotoconductionTime-resolvedSettore ING-INF/01 - ElettronicaSeries resistanceOpticsElectrical resistance and conductancePhotodetectorOptical powerEquivalent series resistanceSystematic studybusiness.industryPhotoconductivityInternal quantum efficiencyQuantum-dot photodetectorPhotonWavelengthSemiconductor quantum dots GermaniumchemistryQuantum dotTransient current Electric resistanceOptoelectronicsIncident powerbusiness
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Efficient and Long-Living Light-Emitting Electrochemical Cells

2010

Three new heteroleptic iridium complexes that combine two approaches, one leading to a high stability and the other yielding a high luminescence efficiency, are presented. All complexes contain a phenyl group at the 6-position of the neutral bpy ligand, which holds an additional, increasingly bulky substituent on the 4-position. The phenyl group allows for intramolecular π–π stacking, which renders the complex more stable and yields long-living light-emitting electrochemical cells (LECs). The additional substituent increases the intersite distance between the cations in the film, reducing the quenching of the excitons, and should improve the efficiency of the LECs. Density functional theory…

Materials scienceQuenching (fluorescence)LigandStackingSubstituentchemistry.chemical_element02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsPhotochemistry01 natural sciences0104 chemical sciencesElectronic Optical and Magnetic MaterialsBiomaterialschemistry.chemical_compoundchemistryIntramolecular forceElectrochemistryPhenyl groupQuantum efficiencyIridium0210 nano-technologyAdvanced Functional Materials
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Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices

2006

The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.

Materials scienceSiliconAstrophysics::High Energy Astrophysical Phenomenalight-emitting deviceschemistry.chemical_elementElectronElectroluminescenceSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaAugerErbiumCondensed Matter::Materials ScienceELECTROLUMINESCENCEPhysics::Atomic and Molecular ClustersPhysics::Atomic PhysicsQuenchingOPTICAL GAINbusiness.industryCondensed Matter PhysicsElectronic Optical and Magnetic Materials1.54 MU-MchemistryOptoelectronicsQuantum efficiencySI NANOCRYSTALSENERGY-TRANSFERLuminescencebusinessPhysical Review B
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Silicon-based light-emitting devices: Properties and applications of crystalline, amorphous and er-doped nanoclusters

2006

In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light-emitting devices based on silicon nanostructures. The performances of crystalline, amorphous, and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanoclusters are more conductive than the crystalline counterpart. In contrast, nonradiative processes seem to be more efficient for amorphous clusters resulting in a lower quantum efficiency. Erbium doping results in the presence of an intense EL at 1.54 μm with a concomit…

Materials scienceSiliconElectroluminescent devicechemistry.chemical_elementNanocrystalQUANTUM DOTSElectroluminescenceSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaNanoclustersErbiumIntegrated optoelectronicElectroluminescence (EL)Light-emitting deviceOptical interconnectionElectrical and Electronic Engineeringbusiness.industryDopingOPTICAL-PROPERTIESAtomic and Molecular Physics and OpticsAmorphous solid1.54 MU-MchemistryNanocrystalOptoelectronicsQuantum efficiencySI NANOCRYSTALSENERGY-TRANSFERbusinessErbium
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Micromorph silicon tandem solar cells with fully integrated 3D photonic crystal intermediate reflectors

2010

A 3D photonic intermediate reflector for textured micromorph silicon tandem solar cells has been investigated. In thin-film silicon tandem solar cells consisting of amorphous and microcrystalline silicon with two junctions of a-Si/c-Si, efficiency enhancements can be achieved by increasing the current density in the a-Si top cell providing an optimized current matching at high current densities. For an ideal photon-management between top and bottom cell, a spectrally-selective intermediate reflective layer (IRL) is necessary. We present the first fully-integrated 3D photonic thin-film IRL device incorporated on a planar substrate. Using a ZnO inverted opal structure the external quantum eff…

Materials scienceSiliconTandembusiness.industryMicromorphchemistry.chemical_elementSolar energyPolymer solar cellOpticschemistryOptoelectronicsQuantum efficiencyPhotonicsbusinessPhotonic crystalSPIE Proceedings
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First InGaN/GaN thin Film LED using SiCOI engineered substrate

2006

InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…

Materials scienceSiliconbusiness.industrychemistry.chemical_elementChemical vapor depositionGallium nitrideCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaLight emitting diodeslaw.inventionchemistrylawOptoelectronicsQuantum efficiencyInGaN/GaN LEDs SiCOI technologyMetalorganic vapour phase epitaxyThin filmbusinessSilicon oxideLight-emitting diodeMetallic bondingefficiency LEE
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