Search results for "RAMAN"
showing 10 items of 1328 documents
Raman scattering study of the anharmonic effects in CeO2−ynanocrystals
2007
We have studied the temperature dependence of the F2g Raman mode phonon frequency and broadening in CeO2−y nanocrystals. The phonon softening and phonon linewidth are calculated using a model which takes into account the three-and four-phonon anharmonic processes. A detailed comparison of the experimental data with theoretical calculations revealed the predominance of four-phonon anharmonic processes in the temperature dependence of the phonon energy and broadening of the nanocrystals. On the other hand, three-phonon processes dominate the temperature behavior of phonons in polycrystalline samples. The anti-Stokes/Stokes peak intensity ratio was also investigated and found to be smaller for…
Vibrational properties of ZnTe at high pressures
2002
Raman spectra of ZnTe were measured under hydrostatic pressures up to 15 GPa at T = 300 K. Results for the frequencies of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) are used to set up a rigid-ion model of the phonon dispersion relations under pressure. Calculated phonon densities of states, mode Gruneisen parameters and the thermal expansion coefficient as a function of pressure are discussed. The effect of pressure on the widths and intensities of Raman spectral features is considered. Raman spectra of high-pressure phases of ZnTe are reported. These spectra indicate the possible existence of a new phase near 13 GPa, intermediate between the cinnabar and ort…
First-principles phonon calculations of Fe4+impurity in SrTiO3
2012
The results of hybrid density functional theory calculations on phonons in Sr(Fe(x)Ti(1-x))O(3) solid solution within the formalism of a linear combination of atomic orbitals are presented. The phonon density of states (DOS) calculated for 6.25% Fe(4+) impurities is reported and defect-induced phonon modes are identified. Based on our calculations and group-theoretical analysis, we suggest for the first time an interpretation of experimentally observed Raman- and IR-active modes.
Time resolved CARS measurements of I2 in solid Kr
2006
Dephasing is a central concept in condensed phase spectroscopy. It determines how long a system will maintain its coherence. The dephasing time of a system is determined by dynamic intermolecular interactions, and therefore measurements of dephasing time can provide information on interactions and couplings between a molecule and its environment. This chapter illustrates the application of the femtosecond coherent anti-Stokes Raman scattering (CARS) method to investigate the vibrational dephasing of I 2 in solid krypton. Dephasing of vibrational states between v = 2 and v = 16 is studied in the temperature range T = 2.6–32 K. The low vibrational states show dephasing times on the order of a…
Two-phonon magneto-Raman scattering in quantum wells: Fröhlich interaction
1996
We have developed a theoretical model of two-phonon resonant magneto-Raman scattering in a semiconductor quantum well (QW). Frohlich electron-phonon interaction has been considered and the corresponding selection rules are derived for Faraday geometry and backscattering configuration. The resonant profiles are analyzed as a function of magnetic field and laser energy. To simplify the discussion a three-band model with parabolic masses has been used as a first approach, studying later the role of heavy-hole light-hole admixture in the scattering process. It is shown that, due to mixing effects, Frohlich interaction contributes to the two-phonon Raman spectra in the parallel (z(σ ± , σ ± ) z)…
Two-LO-Phonon Resonant Raman Scattering in II-VI Semiconductors
1996
Recently, absolute values of socond-order Raman scattering efficiency have been measured around the E 0 and E 0 + Δ 0 critical points of several II-VI semiconductor compounds. The measurements were perfomed in the z(x,x)z backscattering configuration on (001) (ZnSe and ZnTe) and (110) (CdTe) surfaces. They show strong incoming and outgoing resonances around the baud gap and larger scattering efficiencies as compaered to III-V compounds. A theoretical model which includes excitons as intermediate states in the Raman process is shown to give a very good quantitative agreement between theory and experiment. Only a small discrepancy exists, while III-V compounds the discrepancies were close to …
Three dimensional PEDOT nanowires network
2016
Abstract A three dimensional (3D) structure of poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires have been prepared by electrochemical polymerization using 3D-alumina templates. The templates were synthesized by pulse anodization in an electrochemical bath. A 3D free standing network has been obtained after the template removal. The morphological analysis by electron microscopy shows the existence of a 3D PEDOT nanowires network whose nanowire diameter is around 20 nm for the vertical nanowires and 10 nm for the transversal connections. Electrical properties such as the I–V characteristics and the Seebeck coefficient were studied for the nanowires network. Also, the optical properties have…
Raman investigation of single oxidized carbon nanotubes
2001
The oxidation process of single-walled carbon nanotubes via nitric acid treatment was followed by IR-, UV-Vis-NIR, and single bundle Raman spectroscopy. The introduction of functional, oxygen-containing groups is revealed by an additional absorption band at 1725 cm−1, characteristic of carbonyl stretch vibrations. No significant shift of the optical absorption bands could be detected after oxidation. The combination of atomic force microscopy and confocal scanning resonance-enhanced Raman microscopy was used to investigate thin bundles and, eventually, individual nanotubes in detail. These experiments enabled determination of the dependence of the Raman intensity of the G-line (around 1590 …
New methods for the determination of local residual stresses
2022
Splat solidification in thermal sprayed coatings relies on phenomena of various origins, time constants, and dimensional scales which altogether lead to complex residual stress states. As a result, in-service performance may be under or overestimated. Hence, this work aims at characterizing residual stress fields using high resolution instruments: a Raman spectrometer and a tailor-made Near-Field Scanning Microwave Microscope (NFSMM). Investigation areas are of 1 µm and 0.020 µm diameter respectively, both techniques are non-destructive and rely on electromagnetic interaction with matter.A preliminary study was conducted on sintered trigonal Cr2O3 with NFSMM as the technique is used for the…
In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O-2-controlled atmosphere
2017
The effects of temperature and atmosphere (air and O2) on the doping of monolayers of graphene (Gr) on SiO2 and Si substrates, and on the doping of MoS2 multilayer flakes transferred on the same substrates have been investigated. The investigations were carried out by in situ micro-Raman spectroscopy during thermal treatments up to 430 °C, and by atomic force microscopy (AFM). The spectral positions of the G and 2D Raman bands of Gr undergo only minor changes during treatment, while their amplitude and full width at half maximum (FWHM) vary as a function of the temperature and the used atmosphere. The thermal treatments in oxygen atmosphere show, in addition to a thermal effect, an effect a…