Search results for "RAMAN"
showing 10 items of 1328 documents
Shaping graphene with optical forging: from a single blister to complex 3D structures
2020
Properties of graphene, such as electrical conduction and rigidity can be tuned by introducing local strain or defects into its lattice. We used optical forging, a direct laser writing method, under an inert gas atmosphere, to produce complex 3D patterns of single layer graphene. We observed bulging of graphene out of the plane due to defect induced lattice expansion. By applying low peak fluences, we obtained a 3D-shaped graphene surface without either ablating it or deforming the underlying Si/SiO2 substrate. We used micromachining theory to estimate the single-pulse modification threshold fluence of graphene, which was 8.3 mJ cm−2, being an order of magnitude lower than the threshold for…
FeMoO4 Revisited: Crosslike 90° Noncollinear Antiferromagnetic Structure Caused by Dzyaloshinskii–Moriya Interaction
2021
The ground state of Fe2+ (S = 2) in α- and β-FeMoO4 is investigated by experiments including X-ray diffraction, Raman scattering, and 57Fe–Mossbauer spectroscopy below 300 K and evaluated by theore...
The Poisson Ratio in CoFe2O4Spinel Thin Films
2012
The response of epitaxial CoFe2O4 thin films to biaxial compressive stress imposed by MgAl2O4 and SrTiO3 single crystalline substrates is studied using X-ray diffraction and Raman spectroscopy. It is found that the Poisson ratio ν signals a non-auxetic behavior and depends on the substrate used. The Raman modes show an increase in frequency when increasing compressive strain by reducing film thickness; this is due to the shrinking of the unit cell volume. Such behavior is in qualitative agreement with recent ab initio calculations, although the measured values are significantly smaller than predictions. In contrast, the measured Poisson ratio is found to be in good agreement with expectatio…
Static and dynamic properties of low-temperature order in the one-dimensional semiconductor(NbSe4)3I
2016
We investigated static and dynamic lattice properties in a quasi-one-dimensional charge-ordered semiconductor ${({\mathrm{NbSe}}_{4})}_{3}\mathrm{I}$ by using Raman, femtosecond pump-probe spectroscopy and x-ray diffraction. In addition to a well-documented pseudo-Jahn-Teller ferrodistortive structural transition at ${T}_{C}=274$ K, where the displacements of Nb ions lead to ferroelectric (FE) in-chain polarization with opposite direction in adjacent chains, all methods suggest an additional lowering of symmetry at ${T}^{*}\ensuremath{\approx}160$ K. Although antiferroelectric (AFE) phase is partially formed at ${T}_{C}$, our results consistently point to an enhancement of the interchain or…
Raman scattering as a tool for the evaluation of strain inGaN∕AlNquantum dots: The effect of capping
2007
The strain state of $\mathrm{Ga}\mathrm{N}∕\mathrm{Al}\mathrm{N}$ quantum dots grown on $6H\text{\ensuremath{-}}\mathrm{Si}\mathrm{C}$ has been investigated as a function of AlN capping thickness by three different techniques. On the one hand, resonant Raman scattering allowed the detection of the ${A}_{1}(\mathrm{LO})$ quasiconfined mode. It was found that its frequency increases with AlN deposition, while its linewidth did not evolve significantly. Available experiments of multiwavelength anomalous diffraction and diffraction anomalous fine structure on the same samples provided the determination of the wurtzite lattice parameters $a$ and $c$ of the quantum dots. A very good agreement is …
Structural and vibrational study ofZn(IO3)2combining high-pressure experiments and density-functional theory
2021
We report a characterization of the high-pressure behavior of zinc iodate, $\mathrm{Zn}{(\mathrm{I}{\mathrm{O}}_{3})}_{2}$. By the combination of x-ray diffraction, Raman spectroscopy, and first-principles calculations we have found evidence of two subtle isosymmetric structural phase transitions. We present arguments relating these transitions to a nonlinear behavior of phonons and changes induced by pressure on the coordination sphere of the iodine atoms. This fact is explained as a consequence of the formation of metavalent bonding at high pressure which is favored by the lone-electron pairs of iodine. In addition, the pressure dependence of unit-cell parameters, volume, and bond distanc…
The Effects of Thermo-Baric Synthesis on the Structure and Properties of the Ferroelectric Li0.125Na0.875NbO3Solid Solution
2014
ABSTRACTResults of X-ray diffraction, dielectric, and Raman studies of the ferroelectric Li0.125Na0.875NbO3 solid solution obtained under hot-pressing conditions (6 GPa, 1400 and 1800 K) are compared with those of the same compound synthesized by conventional ceramics technology. The thermo-barometric synthesis is found to improve the ordering of cations and to increase the value of dielectric permittivity and ion conductivity of the ceramics.
Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices
2000
6 páginas, 6 figuras, 1 tabla.
Iron Doped-ZrSiO4: Structural, Microstructural and Vibrational Characterization
2015
Fex-ZrSiO4 is known for the applications in the ceramic industry such as ceramic pigment. In this article, we focus our attention to the structural, microstructural and vibrational changes of Fex-ZrSiO4 from free-mineralizer precursors, treated at different temperatures in the range of 1100-1600 °C. The refinements of X-ray diffraction patterns show that Fe3+ cations were distributed into tetrahedral sites replacing Si4+. The evolution of the shape distribution analyzed by transmission electron microscopy, reveal a polyhedral morphology at 1100 °C during 3h. In comparison, well-rounded and homogeneous particle size was determined in the sample heated at 1600 °C during 24 h. On the other han…
Unraveling the strain state of GaN down to single nanowires
2016
International audience; GaN nanowires (NWs) grown by molecular beam epitaxy are usually assumed free of strain in spite of different individual luminescence signatures. To ascertain this usual assumption, the c/a of a GaN NW assembly has been characterized using both X-ray diffraction and Raman spectroscopy, with scaling the measurement down to the single NW. Free-standing single NWs have been observed free of strain-defined as [c/a = (c/a)(o)]/(c/a)(o)-within the experimental accuracy amounting to 1.25 x 10(-4). However, in the general case, a significant portion of the NWs is coalesced, generating an average tensile strain that can be partly released by detaching the NWs from their substr…