Search results for "RAMAN"
showing 10 items of 1328 documents
Raman and photoluminescence spectroscopy of zinc tungstate powders
2009
ZnWO4 powders, synthesized using co-precipitation technique and annealed in air at different temperatures in the range of 80-800 � C, were studied by Raman and photoluminescence spectroscopy. ZnWO4 single crystal was used for comparison. The interpretation of the observed variations of the Raman spectra and intrinsic photoluminescence band upon annealing is suggested.
Enhanced optical properties of Cd–Mg-co-doped ZnO nanoparticles induced by low crystal structure distortion
2020
Abstract The growth of CdxMg0.125-xZn0.875O nanoparticles with yellow-orange luminescence is achieved up to 2.5 at. % Cd via a modified sol–gel process. X-ray diffraction analysis confirmed that all the nanoparticles have the hexagonal wurtzite structure. It is found that Cd doping has a considerable effect on the crystal size, microstrain, band gap, and photoluminescence of the Mg0·125Zn0·875O structure, originating from a preferred crystallographic orientation along the (101) plane of the wurtzite structure. The shift and broadening of the E2(high) mode observed in the Raman spectra due to growth-induced strain corroborates the small distortion observed in the X-ray diffraction data. The …
Structural and optical properties of TiO2–Al2O3nanolaminates produced by atomic layer deposition
2015
Structural and optical properties of Al2O3/TiO2 nanolaminates fabricated by atomic layer deposition (ALD) were investigated. We performed Raman spectroscopy, transmission electron microscopy (TEM), X-Ray reflectivity (XRR), UV-Vis spectroscopy, and photoluminescence (PL) spectroscopy to characterize the Al2O3/TiO2 nanolaminates. The main structural and optical parameters of Al2O3/TiO2 nanolaminates were calculated. It was established that with decreasing of the layer thickness, the value of band gap energy increases due to the quantum size effect related to the reduction of the nanograins size. It was also shown that there is an interdiffusion layer at the Al2O3/TiO2 interface which plays a…
Oxygen-defective ZnO films with various nanostructures prepared via a rapid one-step process and corresponding photocatalytic degradation application…
2018
Abstract The deposition of oxygen-defective ZnO films exhibiting varied nanostructures via Solution Precursor Plasma Spray (SPPS) route, a one-step, minute-scaled duration and large scale method, is reported. The in situ formation of oxygen vacancies in ZnO films was confirmed by UV–Visible, Raman and photoluminescence (PL) spectroscopy and the as-prepared samples exhibit a bandgap as low as 3.02 eV. Density functional theory (DFT) simulation demonstrates that the polarization of ZnO is enhanced by the created oxygen vacancies, leading to substantially improved photocatalytic activity. The comparative experiments also revealed that forming and preserving appropriate ZnO precursor clusters i…
Temperature dependence of Raman scattering and luminescence of the disordered Zn0.5Cd0.5Se alloy
2002
Abstract We report on luminescence and Raman scattering measurements of zincblende Zn0.5Cd0.5Se thin film grown by molecular beam epitaxy. From the luminescence data of the exciton peak, the dependence of the energy gap with temperature [ d E g / d T=(4.35±0.01)×10 −4 meV / K ] and zero-temperature phonon renormalization energy ( Δ E(0)=30±1 meV ) have been obtained. The broadening of the excitonic emission as the temperature increases is mainly due to scattering processes with longitudinal optical phonons and residual ionized impurities. Raman scattering shows a multiphonon structure, which depends on the temperature. At low temperatures, up to the fifth-order phonon peaks appear due to re…
Synthesis and photoluminescence properties of hybrid 1D core–shell structured nanocomposites based on ZnO/polydopamine
2020
In the present work, we report on the modelling of processes at the zinc oxide and polydopamine (ZnO/ PDA) interface. The PDA layer was deposited onto ZnO nanorods (NRs) via chemical bath deposition. The defect concentrations in ZnO before and after PDA deposition were calculated and analysed. The ZnONRs/PDA core–shell nanostructures were studied by transmission electron microscopy (TEM), X-ray diffraction (XRD), Raman and Fourier-transform infrared (FTIR) spectroscopy, photoluminescence (PL) measurements, and diffuse reflectance spectroscopy. The TEM and electron energy loss spectroscopy (EELS) measurements confirmed the conformal coating of PDA, while the PL emission from ZnO and ZnONRs/P…
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
2000
Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…
Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
1999
Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…
Alpha and deuteron irradiation effects on silica nanoparticles
2014
We present an experimental investigation focused on the effects of alpha and deuteron irradiation on different silica nanoparticles. The study has been devoted also to characterize the induced point defects and the eventual structural modifications to evaluate the effects of the different irradiation source in comparison with the bulk materials. After irradiation up to about 10^16 ions cm^-2, we performed electron paramagnetic resonance (EPR), photoluminescence (PL), infrared (IR) absorption, Raman, and atomic force microscopy (AFM) measurements. We found that the two types of irradiation qualitatively induce comparable effects. Furthermore, irradiation generates the socalled twofold coordi…
Optical properties of ZnO deposited by atomic layer deposition (ALD) on Si nanowires
2018
International audience; In this work, we report proof-of-concept results on the synthesis of Si core/ ZnO shell nanowires (SiNWs/ZnO) by combining nanosphere lithography (NSL), metal assisted chemical etching (MACE) and atomic layer deposition (ALD). The structural properties of the SiNWs/ZnO nanostructures prepared were investigated by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopies. The X-ray diffraction analysis revealed that all samples have a hexagonal wurtzite structure. The grain sizes are found to be in the range of 7-14 nm. The optical properties of the samples were investigated using reflectance and photoluminescence spectroscopy. The study o…