Search results for "RB"
showing 10 items of 34251 documents
Comparative Theoretical Analysis of BN Nanotubes Doped with Al, P, Ga, As, In, and Sb
2013
SUMMARY AND CONCLUDING REMARKS We have performed large-scale first-principles calculations ofthe electronic structure of (5,5) boron nitride nanotubescontaining the following substitutional impurity atoms: Al, P,Ga, As, In, and Sb. Calculations have been performed using thetwo methods: (i) linear combination of atomic orbitals(LCAO) with the atomic-centered Gaussian-type functions asa basis set and (ii) linearized augmented cylindrical wave(LACW) accompanied with the local density functional andmuffin-tin approximations for the electronic potential. In arelatively good qualitative agreement, both methods predict lowformation energies and, thus, relative stability of point defectsthat are assoc…
Exploring the transport properties of equatorially low coordinated erbium single ion magnets
2019
Single-molecule spin transport represents the lower limit of miniaturization of spintronic devices. These experiments, although extremely challenging, are key to understand the magneto-electronic properties of a molecule in a junction. In this context, theoretical screening of new magnetic molecules provides invaluable knowledge before carrying out sophisticated experiments. Herein, we investigate the transport properties of three equatorially low-coordinated erbium single ion magnets with C3v symmetry: Er[N(SiMe3)2]3 (1), Er(btmsm)3 (2) and Er(dbpc)3 (3), where btmsm=bis(trimethylsilyl)methyl and dbpc=2,6-di-tert-butyl-p-cresolate. Our ligand field analysis, based on previous spectros…
SIC based solid state protections switches for space applications
2017
Development and technology maturation of Silicon Carbide (SiC) power transistors over the last 15 years has motivated its study in aerospace systems. When compared with Si devices, superior voltage blocking capacity and the capability of operation at higher temperatures, give important advantages in space power electronics applications, similar to what happens in terrestrial electronics. This paper discusses the use of SiC power transistors for Solid State Power Switches especially addressed to the space segment. Two applications will be covered, the first is the Solid State Shunt Switch, widely used in high power Direct Energy Transfer (DET) photovoltaic power regulators and the second is …
Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment
2018
A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel …
Characteristics of industrially manufactured amorphous hydrogenated carbon (a-C:H) depositions on high-density polyethylene
2016
Industrially high-density polyethylene (HDPE) was successively covered by two types of amorphous hydrogenated carbon (a-C:H) films, one more flexible (f-type) and the other more robust (r-type). The films have been grown by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. The surface morphology of both types has been studied by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Contact angle measurements and Raman spectroscopy analysis were done to investigate the surface wettability and carbon chemical composition. Both types display similar morphology and grain growth pattern. Contact angle measurements revealed surfa…
The influence of Cr and Ni doping on the microstructure of oxygen containing diamond-like carbon films
2021
Abstract Non-hydrogenated diamond-like carbon (DLC) films doped with metals and oxygen were deposited by direct current magnetron sputtering. The influence of chromium and nickel on the surface morphology, elemental composition, bonding structure, adhesion force, optical transmittance and nanohardness of the films was characterized by atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX), multi-wavelength Raman spectroscopy, UV–VIS–NIR spectrophotometry and nanoindenter. The surface roughness was reduced with the addition of Cr (7.4 at. %) or Ni (8.9 at. %) into DLC films. The EDX measurements indicated that the addition of Cr increased the oxygen content by ~37%, while …
Growth of WC–Cr–N and WC–Al–N coatings in a RF-magnetron sputtering process
2013
Tungsten carbide-based coatings have been used in a wide variety of industrial applications such as high speed cutting tools, extrusion dies, drills, aerospace industries, and more. A few reports on ternary and quaternary coatings of WC with other elements indicate good prospects for these material systems. The present study focuses on the formation of quaternary WCeCreN and WCeAleN coatings during the simultaneous reactive RF-magnetron sputtering of tungsten carbide and Al or Cr targets in an argon/nitrogen gas mixture. The resulting coatings, with thicknesses of 3.5 mme8.2 mm, were characterized by using several analytical techniques including X-ray diffraction, SEM/EDS, AFM, and X-ray ph…
High pressure theoretical and experimental analysis of the bandgap of BaMoO4, PbMoO4, and CdMoO4
2019
We have investigated the origin of the bandgap of BaMoO4, PbMoO4, and CdMoO4 crystals on the basis of optical absorption spectroscopy experiments and ab initio electronic band structure, density of states, and electronic localization function calculations under high pressure. Our study provides an accurate determination of the bandgaps Eg and their pressure derivatives d E g / dP for BaMoO4 (4.43 eV, −4.4 meV/GPa), PbMoO4 (3.45 eV, −53.8 meV/GPa), and CdMoO4 (3.71 eV, −3.3 meV/GPa). The absorption edges were fitted with the Urbach exponential model which we demonstrate to be the most appropriate for thick crystals with direct bandgaps. So far, the narrowing of the bandgap of distinct PbMoO4…
Ab initio calculations of structural, electronic and vibrational properties of BaTiO3 and SrTiO3 perovskite crystals with oxygen vacancies
2020
The first-principles (ab initio) computations of the structural, electronic, and phonon properties have been performed for cubic and low-temperature tetragonal phases of BaTiO3 and SrTiO3 perovskite crystals, both stoichiometric and non-stoichiometric (with neutral oxygen vacancies). Calculations were performed with the CRYSTAL17 computer code within the linear combination of atomic orbitals approximation, using the B1WC advanced hybrid exchange-correlation functional of the density-functional-theory (DFT) and the periodic supercell approach. Various possible spin states of the defective systems were considered by means of unrestricted (open shell) DFT calculations. It was demonstrated that…
Atomic Layer Deposition of Osmium
2011
Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of deposition cycles. Also conformal growth of Os thi…