Search results for "RECOMBINATION"
showing 10 items of 270 documents
Cryogenic helium as stopping medium for high-energy ions
2008
We have investigated the survival and transport efficiency of Ra-219 ions emitted by a Ra-223 source in high-density cryogenic helium gas, with ionisation of the gas induced by a proton beam. The combined efficiency of ion survival and transport by an applied electric field was measured as a function of ionisation rate density for electric fields up to 160 V/cm and for three temperature and density combinations: 77 K, 0.18 mg/cm(3), 10 K, 0.18 mg/cm(3) and 10 K, 0.54 mg/cm(3). At low beam intensity or high electric field, an efficiency of 30%, is obtained, confirming earlier results. A sharp drop in efficiency is observed at a "threshold" ionisation rate density which increases with the squ…
Kinetics of the electronic center annealing in Al2O3 crystals
2018
Authors are greatly indebted to A. Ch. Lushchik, V. Kortov, M. Izerrouken and R.Vila for stimulating discussions. This work has been carried out within the framework of the Eurofusion Consortium and has received funding from the Euroatom research and training programme 2014–2018 under grant agreement No 633053 . The views and opinions expressed herein do not necessarily reflect those of the European Commission. The calculations were performed using facilities of the Stuttgart Supercomputer Center (project DEFTD 12939 ).
Thermal annealing of radiation defects in MgF2 single crystals induced by neutrons at low temperatures
2020
Abstract Primary radiation defects in ionic solids consist of Frenkel defects – pairs of defects - anion vacancies with trapped electrons (F-type centers) and interstitial ions. Upon temperature increase after irradiation, the electronic F-type centers are annealed due to recombination with mobile interstitials. Analysis of the recombination (annealing) kinetics allows us to obtain important information on the interstitial migration. At high radiation doses more complex dimer (F2-type) centers are observed in several charge states, which are well distinguished spectroscopically. We analysed here available experimental kinetics of the F2-type center annealing in MgF2 in a wide temperature ra…
Time-resolved luminescence of CsITl crystals excited by pulsed electron beam
1997
Abstract Results of the time-resolved measurements of CsITl crystal luminescence under electron pulse excitation at room temperature are reported. The rise and decay times of both 400 and 500 nm emission bands have been measured. The results obtained show that the main mechanism of the luminescence excitation is hole recombination luminescence which is due to self-trapped hole migration toward Tl 0 centres. Stimulation spectra of photostimulated luminescence of CsITl are also analyzed.
Annealing of color centers in LiBaF 3
2002
Results of the glow rate technique to analyze the activation energy of thermostimulated annealing of X-ray created F -type color centers in LiBaF 3 crystals are presented, showing pure and containing oxygen centers. It is shown that depending on the impurity composition two alternative mechanisms are involved in the annealing of color centers. It is proposed that either the anion vacancy governed migration of F -centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine ( F i ) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F -type centers are responsible for the recom…
Luminescence mechanisms of oxygen-related defects in AlN
2002
Spectral characteristics of native oxygen-related defects existing in the crystalline lattice of AlN were studied. Features of photoluminescence observed under exposure to ultraviolet light together with those of the photostimulated luminescence testify the recombination character of luminescence. The mechanism of luminescence of oxygen-related defects is proposed.
Hundreds of nuclear and plastid loci yield novel insights into orchid relationships.
2021
Pérez-Escobar, Oscar Alejandro, Dodsworth, Steven, Bogarín, Diego, Bellot, Sidonie, Balbuena, Juan A, Schley, Rowan J, Kikuchi, Izai A, Morris, Sarah K, Epitawalage, Niroshini, Cowan, Robyn, Maurin, Olivier, Zuntini, Alexandre, Arias, Tatiana, Serna-Sánchez, Alejandra, Gravendeel, Barbara, Torres Jimenez, Maria Fernanda, Nargar, Katharina, Chomicki, Guillaume, Chase, Mark W, Leitch, Ilia J, Forest, Félix, Baker, William J (2021): Hundreds of nuclear and plastid loci yield novel insights into orchid relationships. American journal of botany 108 (7): 1166-1180, DOI: http://doi.org/10.5281/zenodo.7778176
Solid film versus solution-phase charge-recombination dynamics of exTTF-bridge-C60 dyads.
2005
The charge-recombination dynamics of two exTTF-C 6 0 dyads (exTTF=9,10-bis(l,3-dithiol-2-ylidene)-9,10-dihydroanthracene), observed after photoinduced charge separation, are compared in solution and in the solid state. The dyads differ only in the degree of conjugation of the bridge between the donor (exTTF) and the acceptor (C 6 0 ) moieties. In solution, photoexcitation of the nonconjugated dyad C 6 0 -BN-exTTF (1) (BN=1,1'-binaphthyl) shows slower charge-recombination dynamics compared with the conjugated dyad C 6 0 -TVB-exTTF (2) (TVB = bisthienylvinylenebenzene) (lifetimes of 24 and 0.6 μs, respectively), consistent with the expected stronger electronic coupling in the conjugated dyad.…
ESR observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon
2002
Paramagnetic centers in hydrogenated microcrystalline silicon, mc-Si:H have been studied using dark and light-induced electron-spin resonance ~ESR!. In dark ESR measurements only one center is observed. The g values obtained empirically from powder-pattern line-shape simulations are gi52.0096 and g’52.0031. We suggest that this center may be due to defects in the crystalline phase. During illumination at low temperatures, an additional ESR signal appears. This signal is best described by two powder patterns indicating the presence of two centers. One center is asymmetric (gi51.999, g’51.996), while the other is characterized by large, unresolved broadening such that unique g values cannot b…
Exciton recombination in self-assembled InAs/GaAs small quantum dots under an external electric field
2002
5 páginas, 3 figuras.-- PACS: 73.63.Kv; 78.55.Cr; 78.67.Hc; S7.12.-- Trabajo presentado en la 7th International Conference on Optics and Excitons in Confined Systems (OECS7).