Search results for "Radiation hardening"
showing 9 items of 39 documents
Resolution changes of MCP-PMTs in magnetic fields
2016
Micro-channel plate photomultiplier tubes (MCP-PMTs) are chosen in many applications that have to cope with strong magnetic fields. The DIRC detectors of the PANDA experiment plan to employ them as they show excellent timing characteristics, radiation hardness, relatively low dark count rates and sufficient lifetime. This article mainly focuses on the performance of the position reconstruction of detected photons. Two different MCP-PMTs with segmented anode geometries have been tested in magnetic fields of different strengths. The variation of their performance has been studied. The measurements show improved position resolution and image shifts with increasing magnetic field strength.
Technology of p-type microstrip detectors with radiation hard p-spray, p-stop and moderated p-spray insulations
2007
5 pages, 8 figures.-- PACS nrs.: 29.40.Gx; 29.40.-- ISI Article Identifier: 000249604700010.
Preliminary radiation hardness tests of single photon Si detectors
2010
Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25 degrees C to 65 degrees C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3x10(7)-5x10(10) cm(-2), and X-rays irradiations in the range 0.5-20 krad(Si). Optical characterization was performed using a laser at 659 nm and opportunely chosen filters to vary the…
Design and test of a prototype silicon detector module for ATLAS Semiconductor Tracker endcaps
2005
The ATLAS Semiconductor Tracker (SCT) will be a central part of the tracking system of the ATLAS experiment. The SCT consists of four concentric barrels of silicon detectors as well as two silicon endcap detectors formed by nine disks each. The layout of the forward silicon detector module presented in this paper is based on the approved layout of the silicon detectors of the SCT, their geometry and arrangement in disks, but uses otherwise components identical to the barrel modules of the SCT. The module layout is optimized for excellent thermal management and electrical performance, while keeping the assembly simple and adequate for a large scale module production. This paper summarizes th…
Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation
2021
International audience; Functional verification schemes at a level different from component-level testing are emerging as a cost-effective tool for those space systems for which the risk associated with a lower level of assurance can be accepted. Despite the promising potential, system-level radiation testing can be applied to the functional verification of systems under restricted intrinsic boundaries. Most of them are related to the use of hadrons as opposed to heavy ions. Hadrons are preferred for the irradiation of any bulky system, in general, because of their deeper penetration capabilities. General guidelines about the test preparation and procedure for a high-level radiation test ar…
The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
2002
The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with protons
2003
Abstract Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications
2016
An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space appli…
O2-Loading Treatment of Ge-Doped Silica Fibers: A Radiation Hardening Process
2016
International audience; The effects of a high-pressure O2-loading treatment on the radiation response of Ge-doped optical fibers (OFs) were investigated. We found that the incorporation of high concentration of interstitial molecular oxygen remarkably enhances the resistance to ionizing radiation of Ge-doped OFs in the UV-Visible domain and, at the same time, improves the transmission of UV light in the unirradiated OF sample. By comparison with previously reported results, the O2-loading treatment turned out to increase the radiation resistance of Ge-doped OFs more efficiently than F or Ce codoping. The understanding of such amelioration relies in basic radiation-induced mechanisms that we…