Search results for "Resistivity"
showing 10 items of 385 documents
Transport properties of silicon doped n-indium selenide
1992
Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. Results are interpreted through a model, previously proposed for tin doped InSe, that takes into account the contribution of both three- and two-dimensional electrons to charge transport along the layers in InSe.
High-order methods for the simulation of hydromagnetic instabilities in core-collapse supernovae
2011
AbstractWe present an assessment of the accuracy of a recently developed MHD code used to study hydromagnetic flows in supernovae and related events. The code, based on the constrained transport formulation, incorporates unprecedented ultra-high-order methods (up to 9th order) for the reconstruction and the most accurate approximate Riemann solvers. We estimate the numerical resistivity of these schemes in tearing instability simulations.
A coupled map as a model of the dynamics of the magnetotail current sheet
2001
Abstract A magnetic field model of the magnetotail current sheet in the form of a coupled-map lattice (CML) is presented. It is continuously driven (“running”) and based on the MHD diffusion equation. Solar wind vBS data (solar wind speed multiplied by the southward component of IMF) are used for driving the model, and it is shown to exhibit perturbations (avalanches) with power-law scalings in their distributions of duration and size. Such distributions may indicate self-organized critical (SOC) behavior. Furthermore, it is shown that the power spectra of the model outputs are of bicolor power-law form with different slopes for high and low frequencies. Although the “running” model gives p…
Thermoelectric Effects: Semiclassical and Quantum Approaches from the Boltzmann Transport Equation
2013
The thermoelectric efficiency of a material depends on its electronic and phononic properties. It is normally given in terms of the dimensionless figure of merit Z T = σ S 2 T ∕ κ. The parameters involved in Z T are the electrical conductivity σ, the Seebeck coefficient S, and the thermal conductivity κ. The thermal conductivity has two contributions, κ = κ e + κ L , the electron thermal conductivity κ e and the lattice thermal conductivity κ L . In this chapter all these parameters will be deduced for metals and semiconductors, starting from the Boltzmann transport equation (BTE). The electrical conductivity, the Seebeck coefficient, and the electronic thermal conductivity will be obtained…
Evidence for phonon skew scattering in the spin Hall effect of platinum
2018
We measure and analyze the effective spin Hall angle of platinum in the low-residual resistivity regime by second-harmonic measurements of the spin-orbit torques for a multilayer of $\mathrm{Pt}|\mathrm{Co}|{\mathrm{AlO}}_{x}$. An angular-dependent study of the torques allows us to extract the effective spin Hall angle responsible for the damping-like torque in the system. We observe a strikingly nonmonotonic and reproducible temperature dependence of the torques. This behavior is compatible with recent theoretical predictions which include both intrinsic and extrinsic (impurities and phonons) contributions to the spin Hall effect at finite temperatures.
Itinerant half-metallic ferromagnetsCo2TiZ(Z=Si, Ge, Sn):Ab initiocalculations and measurement of the electronic structure and transport properties
2010
This work reports on ab initio calculations and experiments on the half-metallic ferromagnetic Heusler compounds ${\text{Co}}_{2}\text{Ti}Z$ $(Z=\text{Si},\text{ }\text{Ge},\text{ }\text{Sn})$. Aim is a comprehensive study of the electronic-structure and thermoelectric properties. The impact of the variation in the main group element $Z$ on those properties is discussed. X-ray diffraction was performed on the compounds and the lattice parameters are compared to other ${\text{Co}}_{2}$-based compounds. Hard x-ray photoemission measurements were carried out and the results are compared to the calculated electronic structure. The experimentally determined electronic structure, magnetic propert…
Vortex-liquid entanglement inBi2Sr2CaCu2O8+δfilms in the presence of quenched disorder
1998
We have investigated the thermally activated behavior of the in-plane electrical resistivity of ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}{\mathrm{CaCu}}_{2}{\mathrm{O}}_{8+\mathrm{\ensuremath{\delta}}}$ films for magnetic fields $Bl~{10}^{4}\mathrm{G}$ applied parallel to the $c$ axis. The activation energy in the vortex-liquid state changes suddenly at a crossover field ${B}_{\mathrm{cr}}.$ The anisotropy reduction generated by oxygen annealing leads to the increase of the crossover field. For $Bl{B}_{\mathrm{cr}},$ the activation energy $U$ is weakly magnetic-field dependent. For $Bg{B}_{\mathrm{cr}},$ $U(B,T)\ensuremath{\sim}(1\ensuremath{-}{T/T}_{c0}{)/B}^{1/2},$ which corresponds to an entan…
2018
We apply homogenization theory to calculate the effective electric conductivity and Hall coefficient tensor of passive three-dimensionally periodic metamaterials subject to a weak external static homogeneous magnetic field. We not only allow for variations of the conductivity and the Hall coefficient of the constituent material(s) within the metamaterial unit cells, but also for spatial variations of the magnetic permeability. We present four results. First, our findings are consistent with previous numerical calculations for finite-size structures as well as with recent experiments. This provides a sound theoretical justification for describing such metamaterials in terms of effective mate…
Nanoscale inhomogeneity of the Schottky barrier and resistivity inMoS2multilayers
2015
Conductive atomic force microscopy (CAFM) is employed to investigate the current injection from a nanometric contact (a Pt coated tip) to the surface of ${\text{MoS}}_{2}$ thin films. The analysis of local current-voltage characteristics on a large array of tip positions provides high spatial resolution information on the lateral homogeneity of the $\mathrm{tip}/{\text{MoS}}_{2}$ Schottky barrier ${\mathrm{\ensuremath{\Phi}}}_{B}$ and ideality factor $n$, and on the local resistivity ${\ensuremath{\rho}}_{\text{loc}}$ of the ${\text{MoS}}_{2}$ region under the tip. Here, ${\mathrm{\ensuremath{\Phi}}}_{B}=300\ifmmode\pm\else\textpm\fi{}24\phantom{\rule{0.28em}{0ex}}\text{meV}, n=1.60\ifmmode…
Electronic correlation effects and the Coulomb gap at finite temperature.
2000
We have investigated the effect of the long-range Coulomb interaction on the one-particle excitation spectrum of n-type Germanium, using tunneling spectroscopy on mechanically controllable break junctions. The tunnel conductance was measured as a function of energy and temperature. At low temperatures, the spectra reveal a minimum at zero bias voltage due to the Coulomb gap. In the temperature range above 1 K the Coulomb gap is filled by thermal excitations. This behavior is reflected in the temperature dependence of the variable-range hopping resitivity measured on the same samples: Up to a few degrees Kelvin the Efros-Shkovskii ln$R \propto T^{-1/2}$ law is obeyed, whereas at higher tempe…