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RESEARCH PRODUCT
Transport properties of silicon doped n-indium selenide
A. SeguraA. ChevyJaime Rierasubject
Physics and Astronomy (miscellaneous)Condensed matter physicsSiliconDopingGeneral Engineeringchemistry.chemical_elementGeneral Chemistrychemistry.chemical_compoundchemistryImpurityHall effectElectrical resistivity and conductivitySelenideGeneral Materials ScienceTinIndiumdescription
Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. Results are interpreted through a model, previously proposed for tin doped InSe, that takes into account the contribution of both three- and two-dimensional electrons to charge transport along the layers in InSe.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1992-05-01 | Applied Physics A Solids and Surfaces |