Search results for "Resistor"
showing 10 items of 48 documents
A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter
2014
This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The data sheet from manufacturers shows the characteristics of MOSFET' intrinsic diode when gate source voltage (VGS) is 0 V. There are applications where the MOSFET' intrinsic diode is used while VGS is different than 0 V. One of these applications is induction heating, where depending on the load and the regulation system, the diode can conduct a significant part of the inverter current. In most applications which use the MOSFET' intrinsic diode, the turn ON of the intrinsic diode happens at VGS = 0 V. After a blanking…
Conducting Polymers for Ammonia Sensing: Electrodeposition, Hybrid Materials and Heterojunctions
2017
International audience; Polyaniline (PANI) with electrodonating and electrowithdrawing substituents were electrodeposited and studied as sensing materials in resistors and heterojunctions. Whereas the dimethoxyaniline leads to a highly conductive material, the tetrafluoroaniline leads to a poor conducting polymer. However, this latter was used in heterojunctions, associated with a highly conductive material, the lutetium bisphthalocyanine LuPc2. Elsewhere, hybrid materials combining polypyrrole (PPy) with ionic macrocycles as counterions were also electrosynthesized and used as sensing material in resistors, for the detection of ammonia. They exhibit a higher sensitivity compared to PPy pre…
A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites
2015
A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4μW and exhibits a measured Temperature Drift of 15ppm/°C for a temperature range of 190°C (−60°C to 130°C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external compon…
Modelling, Simulation and Characterization of a Supercapacitor in Automotive Applications
2022
In the energy storage field, supercapacitors (SCs) are gaining more and more attention thanks to features such as high-power density, high life cycles and lack of maintenance. In this article, an improved SC three-branches model which considers the residual charge phenomenon is presented. The procedure to estimate the model parameters and the related experimental set-up are presented. The parameter estimation procedure is repeated for several SCs of the same type. The average parameters are then obtained and used as initial guesses for a recursive least square optimization algorithm, to increase the accuracy of the model. The model of a single SC is then extended to SC banks, testing differ…
Optical-Microwave Sensor for Real-Time Measurement of Water Contamination in Oil Derivatives
2023
This paper presents a novel microwave sensor using optical activation for measuring in real-time the water contamination in crude oil or its derivatives. The sensor is constructed from an end-coupled microstrip resonator that is interconnected to two pairs of identical fractal structures based on Moore curves. Electromagnetic (EM) interaction between the fractal curves is mitigated using a T-shaped microstrip-stub to enhance the performance of the sensor. The gap in one pair of fractal curves is loaded with light dependent resistors (LDR) and the other pair with microwave chip capacitors. The chip capacitors were used to increase the EM coupling between the fractal gaps to realize a high Q-…
Influence of the temperature on the equivalent noise resistance of HEMTs at microwave frequencies
1998
Abstract This paper is focused on the performance of the noise resistance Rn of HEMTs at microwave frequencies as a function of temperature. A sensitivity analysis has been performed on several noisy circuit models of low-noise devices that we had previously characterized in terms of scattering and noise parameters. Such a study has been aimed at pointing out the role played by either the electrical elements and the noise temperatures of the resistors of the equivalent circuit on the typically observed U-shaped behavior of Rn.
Humidity Insensitive Conductometric Sensors for Ammonia Sensing
2014
Interest in molecular materials has been driven in large part by their various and prosperous applications, especially in the domain of organic electronics, where they offer many advantages as well as alternative approaches compared to their inorganic counterparts. Most of conductometric transducers are resistors[[ and transistors[[[, but rarely diodes[6]. In our laboratory, we designed and characterized new molecular material based devices. Molecular Semiconductor Doped Insulator (MSDI) heterojunctions were built around a heterojunction between a Molecular Semiconductor (MS) and a Doped Insulator (DI)[7][8]. This new device exhibits interesting electronic properties that allow ammonia sens…
The multimodal detection as a tool for molecular material-based gas sensing
2013
Abstract The adsorption of a target gas on a material induces a change in several physical characteristics, such as the dielectric constant, the work function or the conductivity. The use of different transducers sensitive to the variation of these parameters appears to be a relevant methodology worthy of investigation. In the field of sensors, molecular materials present interesting and potentially valuable features as sensing elements for real gas sensor applications. In this article, we review the different types of conductimetric transducers and also show how a molecular material-based microwave transducer can be used for gas sensing. Among conductimetric transducers, resistors have bee…
Photoconductivity of Germanium Nanowire Arrays Incorporated in Anodic Aluminum Oxide
2007
Photoconductivity of germanium nanowire arrays of 50 and 100 nm diameter incorporated into Anodic Aluminum Oxide (AAO) membranes illuminated with visible light is investigated. Photocurrent response to excitation radiation with time constants faster than 10−4 s were governed by absorption of incident light by nanowires, while photokinetics with time constants of the order of 10−3 s originates from the photoluminescence of the AAO matrix. Possible applications of nanowire arrays inside AAO as photoresistors are discussed.
Conductivity reconstructions using real data from a new planar electrical impedance tomography device
2013
Abstract In this paper, we present results of reconstructions using real data from a new planar electrical impedance tomography device developed at the Institut fur Physik, Johannes Gutenberg Universitat, Mainz, Germany. The prototype consists of a planar sensing head of circular geometry, and it was designed mainly for breast cancer detection. There are 12 large outer electrodes arranged on a ring of radius cm where the external currents are injected, and a set of 54 point-like high-impedance inner electrodes where the induced voltages are measured. Two direct (i.e. non-iterative) reconstruction algorithms are considered: one is based on a discrete resistor model, and the other one is an …