Search results for "SCA"

showing 10 items of 23299 documents

High spatial resolution strain measurements at the surface of duplex stainless steels

2007

International audience; The determination of local strain fields at the surface of materials is of major importance for understanding their reactivity. In the present paper, lithography is used to fabricate grid points at the microscale and to map strain gradients within grains and between grains. This method was applied to duplex stainless steels which exhibit heterogeneous strain distributions under straining conditions. The influence of various parameters (the specimen microstructure, the density of slip bands, the number of systems activated and the grid geometry) on the strain value was discussed.

010302 applied physicsMaterials science[ SPI.MAT ] Engineering Sciences [physics]/MaterialsMetallurgyLüders bandtechnology industry and agriculture02 engineering and technologySlip (materials science)Plasticity021001 nanoscience & nanotechnologyCondensed Matter PhysicsMicrostructure01 natural sciences[SPI.MAT]Engineering Sciences [physics]/Materials0103 physical sciences0210 nano-technologyLocal fieldLithographyImage resolutionMicroscale chemistryPhilosophical Magazine
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State-space formulation of scalar Preisach hysteresis model for rapid computation in time domain

2015

A state-space formulation of classical scalar Preisach model (CSPM) of hysteresis is proposed. The introduced state dynamics and memory interface allow to use the state equation, which is rapid in calculation, instead of the original Preisach equation. The main benefit of the proposed modeling approach is the reduced computational effort which requires only a single integration over the instantaneous line segment in the Preisach plane. Numerical evaluations of the computation time and model accuracy are provided in comparison to the CSPM which is taken as a reference model.

010302 applied physicsMemory interfacePreisach model of hysteresis0209 industrial biotechnologyApplied MathematicsComputationScalar (mathematics)02 engineering and technologySystems and Control (eess.SY)01 natural sciences020901 industrial engineering & automationLine segmentControl theoryModeling and Simulation0103 physical sciencesFOS: Electrical engineering electronic engineering information engineeringApplied mathematicsComputer Science - Systems and ControlTime domainReference modelMathematics
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Influence of surface topography on depth profiles obtained by Rutherford backscattering spectrometry

2000

A method for determining correct depth profiles from samples with rough surfaces is presented. The method combines Rutherford backscattering spectrometry with atomic force microscopy. The topographical information obtained by atomic force microscopy is used to calculate the effect of the surface roughness on the backscattering spectrum. As an example, annealed Au/ZnSe heterostructures are studied. Gold grains were observed on the surfaces of the annealed samples. The annealing also caused diffusion of gold into the ZnSe. Backscattering spectra of the samples were measured with a 2 MeV 4He+ ion beam. A scanning nuclear microprobe was used to verify the results by measuring backscattering fro…

010302 applied physicsMicroprobeMaterials scienceIon beamAnnealing (metallurgy)Analytical chemistryGeneral Physics and AstronomyHeterojunction02 engineering and technologyCondensed Matter::Mesoscopic Systems and Quantum Hall Effect021001 nanoscience & nanotechnologyRutherford backscattering spectrometry01 natural sciencesSpectral lineCondensed Matter::Materials Science0103 physical sciencesSurface roughness0210 nano-technologySpectroscopyJournal of Applied Physics
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Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry

2006

The use of forward scattered heavy incident ions in combination with a time-of-flight-energy telescope provides a powerful tool for the analysis of very thin (5–30 nm) films. This is because of greater stopping powers and better detector energy resolution for heavier ions than in conventional He-RBS. Because of the forward scattering angle, the sensitivity is greatly enhanced, thus reducing the ion beam induced desorption during the analysis of very thin films. The drawback of forward scattering angle is the limited mass separation for target elements. We demonstrate the performance of the technique with the analysis of 25 nm thick NiSi films and atomic layer deposited 6 nm thick HfxSiyOz f…

010302 applied physicsNuclear and High Energy PhysicsMaterials scienceIon beamSiliconbusiness.industryScatteringForward scatterchemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnology01 natural sciences7. Clean energyIonElastic recoil detectionTime of flightchemistry0103 physical sciencesOptoelectronicsAtomic physicsThin film0210 nano-technologybusinessInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Lattice sites of diffused gold and platinum in epitaxial ZnSe layers

2000

Abstract The lattice location of diffused gold and platinum in zinc selenide (ZnSe) epitaxial layers was studied using the Rutherford backscattering (RBS) channeling technique. Thin Au and Pt films were evaporated onto ZnSe samples. The Au/ZnSe samples were annealed at 525°C and the residual Au film was removed by etching. Channeling angular scan measurements showed that about 30% of Au atoms were close to substitutional site (displaced about 0.2 A). In the case of the Pt/ZnSe samples the annealing temperatures ranged from 600°C to 800°C. The Pt minimum yields along 〈1 0 0〉 direction were close to the random value, varying from 80% to 90%. The measured Pt angular scans along 〈1 0 0〉 and 〈1 …

010302 applied physicsNuclear and High Energy PhysicsMaterials scienceScatteringAnnealing (metallurgy)chemistry.chemical_element02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnologyEpitaxy01 natural sciencessymbols.namesakechemistry.chemical_compoundCrystallographyTransition metalchemistry0103 physical sciencessymbolsZinc selenideRutherford scattering0210 nano-technologyPlatinumInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Dielectric, thermal and Raman spectroscopy studies of lead-free (Na0.5Bi0.5)1−xSrxTiO3 (x = 0, 0.04 and 0.06) ceramics

2016

ABSTRACTLead-free (Na0.5Bi0.5)1−xSrxTiO3 (x = 0, 0.04 and 0.06) ceramics with relative densities above 97% were prepared by solid-state synthesis process. Their dielectric, thermal and Raman properties were studied. X-ray diffraction analysis shows perovskite structure with rhombohedral symmetry at room temperature. Sr doping of Na0.5Bi0.5TiO3 (NBT) results in an increase of the dielectric permittivity, diffusing of the permittivity maximum and its shift toward lower temperatures. The temperature of the rhombohedral–tetragonal phase transition indicated by the differential scanning calorimetry (DSC) peak and relaxational dielectric anomaly near the depolarization temperature are also shifte…

010302 applied physicsPermittivityPhase transitionMaterials scienceDopingAnalytical chemistry02 engineering and technologyDielectric021001 nanoscience & nanotechnology01 natural sciencessymbols.namesakeDifferential scanning calorimetryvisual_art0103 physical sciencesvisual_art.visual_art_mediumsymbolsRelaxation (physics)General Materials ScienceCeramic0210 nano-technologyRaman spectroscopyInstrumentationPhase Transitions
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Dielectric behaviour of BaTi1-xZrxO3ceramics obtained by means of a solid state and mechanochemical synthesis

2016

ABSTRACTIn this study the comparison of dielectric behaviour of BaTi1-xZrxO3 (BTZx) ceramic samples prepared by means of a solid state and mechanochemical synthesis was presented. A single phase of perovskite structure was identified in the samples at room temperature. No significant impurities were detected in an EDS spectrum and the samples had a good stoichiometric ratio. The morphology of the investigated samples was characterized by a scanning electron microscopy (SEM). The investigation of dielectric properties of the BTZx samples within the temperature range from 140 K to 600 K was performed by means of a dielectric spectroscopy method at the frequency ranging from 0.1 Hz to 10 MHz. …

010302 applied physicsPhase transitionMaterials scienceScanning electron microscopeAnalytical chemistry02 engineering and technologyDielectricAtmospheric temperature range021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsDielectric spectroscopyImpurityvisual_art0103 physical sciencesvisual_art.visual_art_mediumCeramic0210 nano-technologyStoichiometryFerroelectrics
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The Acoustic Wave Behavior Within the PEA Cell for Space Charge Measurement

2018

In order to evaluate the acoustic wave behavior within the Pulsed Electro Acoustic (PEA) cell, a simulation model has been developed in this work. The model, implemented in Matlab environment, is based on the analogy between acoustic and electrical quantities. Therefore, it was possible to model the PEA cell as cascade connected lossy transmission lines. The model has been validated theoretically by making a comparison with a simulation result found in literature. The experimental validation has also been made by using the PEA cell of the LEPRE high voltage lab. In addition, four graphs have been realized. Two of them can be used to establish in easy and fast way to obtain the minimum groun…

010302 applied physicsPhysics021103 operations researchPEA methodAcousticsElectronic Optical and Magnetic Material0211 other engineering and technologiesPEA modelHigh voltage02 engineering and technologyAcoustic wave01 natural sciencesSignalSpace chargeSettore ING-IND/31 - ElettrotecnicaCascade0103 physical sciencesElectrodeReflection phenomenonReflection (physics)Electrical and Electronic EngineeringMATLABcomputercomputer.programming_language
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High-frequency EPR study on Cu4Cu- and Co4Co-metallacrown complexes

2019

Abstract High-frequency/high-field electron paramagnetic resonance studies on two homonuclear 12-MC-4 metallacrown complexes Cu4Cu and Co4Co are presented. For Cu4Cu, our data imply axial-type g-anisotropy with g x = 2.03 ± 0.01 , g y = 2.04 ± 0.01 , and g z = 2.23 ± 0.01 , yielding g = 2.10 ± 0.02 . No significant zero field splitting (ZFS) of the ground state mode is observed. In Co4Co, we find a m S = ± 3 / 2 ground state with g = 2.66 . The data suggest large anisotropy D of negative sign.

010302 applied physicsPhysicsCondensed Matter - Materials ScienceCondensed Matter - Mesoscale and Nanoscale PhysicsMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technologyZero field splitting021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesHomonuclear moleculeElectronic Optical and Magnetic Materialslaw.inventionlawMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencesAtomic physics0210 nano-technologyGround stateElectron paramagnetic resonanceAnisotropyMetallacrownJournal of Magnetism and Magnetic Materials
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Electromagnetically induced switching of ferroelectric thin films

2007

We analyze the interaction of an electromagnetic spike (one cycle) with a thin layer of ferroelectric medium with two equilibrium states. The model is the set of Maxwell equations coupled to the undamped Landau-Khalatnikov equation, where we do not assume slowly varying envelopes. From linear-scattering theory, we show that low-amplitude pulses can be completely reflected by the medium. Large-amplitude pulses can switch the ferroelectric. Using numerical simulations and analysis, we study this switching for long and short pulses, estimate the switching times, and provide useful information for experiments.

010302 applied physicsPhysicsCondensed matter physicsScatteringNumerical analysisThin layerFOS: Physical sciencesPattern Formation and Solitons (nlin.PS)Condensed Matter Physics01 natural sciencesFerroelectricityNonlinear Sciences - Pattern Formation and SolitonsElectronic Optical and Magnetic Materialssymbols.namesakeAmplitudeMaxwell's equations0103 physical sciencessymbolsFerroelectric thin filmsThin film010306 general physicsComputingMilieux_MISCELLANEOUS
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