Search results for "SILICON-ON-INSULATOR"
showing 5 items of 5 documents
Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film
2003
Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law. Peer reviewed
Active plasmonics in WDM traffic switching applications
2012
With metal stripes being intrinsic components of plasmonic waveguides, plasmonics provides a "naturally" energy-efficient platform for merging broadband optical links with intelligent electronic processing, instigating a great promise for low-power and small-footprint active functional circuitry. The first active Dielectric-Loaded Surface Plasmon Polariton (DLSPP) thermo-optic (TO) switches with successful performance in single-channel 10 Gb/s data traffic environments have led the inroad towards bringing low-power active plasmonics in practical traffic applications. In this article, we introduce active plasmonics into Wavelength Division Multiplexed (WDM) switching applications, using the …
Towards Si-based photonic circuits: Integrating photonic crystals in silicon-on-insulator platforms
2007
In the context of Si-based photonics, we report on a strategy to integrate two optical components, a 3D photonic crystal light emitter and a waveguide, in a silicon-on-insulator patterned substrate. Self-assembled colloidal photonic crystals are produced with high crystalline quality and spatial selectivity. Plane wave expansion and finite-difference time-domain have been used to find suitable configurations for positioning emitters and waveguides. The first steps toward the realisation of these configurations are presented.
Electron–phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions
2002
Abstract Energy flow rate in degenerate n-type silicon-on-insulator (SOI) film is studied at low temperatures. The electrons are heated above the lattice temperature by electric field and the electron temperature is measured via semiconductor–superconductor quasiparticle tunneling. The energy flow rate in the system is found to be proportional to T 5 , indicating that electron–phonon relaxation rate and electron–phonon phase breaking rate are proportional to T 3 . The electron–phonon system in the SOI film is in the “dirty limit” where the electron mean free path is smaller than the inverse of the thermal phonon wave vector.
Inverse nonlinear design in silicon waveguides
2014
La tecnologia fotònica basada en silici és objecte d'intensa investigació tant al món acadèmic com a la indústria. Un dels seus principals atractius rau en la seua elevada compatibilitat amb tècniques ja desenvolupades per a la integració de circuits electrònics, cosa que podria reduir el seu cost. A més, el silici ofereix una gran diversitat d'efectes no lineals que poden ser aprofitats per processar senyals òptics en xips compactes a velocitats superiors als dispositius electrònics actuals. En particular, l'objectiu d'aquesta tesi ha estat dissenyar una guia integrada en una plataforma híbrida de silici i sílice per generar espectres supercontinus. Aquest projecte presentava diferents rep…