Search results for "SPAD"
showing 10 items of 90 documents
"Spada, Vincenzo"
2008
Biografia, opera, stile
USO DELLA TUNICA VAGINALE DEL TESTICOLO NELLA CHIRURGIA DELL'IPOSPADIA
1993
Urethrocutaneus fistulas are the most common complication of surgery for hypospadias. In five patients, fistulas of this type were repaired with patches of tunica vaginalis to prevent fistula recurrence. Our experience and that of others suggest that tunica vaginalis autografts can be used for treatment of a variety of urethral problems in children.
IL LEMBO LIBERO di MUCOSA VESCICALE NELLA CORREZIONE DELL'IPOSPADIA
1989
Gli Autori descrivono l'utilizzo della muscosa vescicale nel trattamento dell'ipospadia
USE OF TUNICA VAGINALIS IN THE SURGERY OF HYPOSPADIAS
1992
The authors report their experience in the use of the Tunica vaginalis in the surgical correction of hypospadias and illustrate the peculiarities showing their case studies and the results obtained
Unexpected complication of TIP urethroplasty: the diverticulum of neo-urethra
2010
Measurements of Silicon Photomultipliers Responsivity in Continuous Wave
2012
N-on-P and P-on-N Silicon Photomultipliers: Responsivity comparison in the continuous wave regime
2013
We report on the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers fabricated in planar technology on silicon P-type and Ntype substrate respectively. A physical explanation of the experimental results is provided.
Measurements of Silicon Photomultipliers Responsivity
2012
We present some results on the optical characterization of Silicon Photomultipliers designed for medical imaging applications. In particular we will discuss our responsivity measurements performed with very low incident optical power and on a broad spectrum
Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime
2013
We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
Giuseppe Mazzaglia (Bibliografia)
2001
Bibliografia.