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RESEARCH PRODUCT
Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime
Massimo MazzilloGabriele AdamoGiuseppe Costantino GiaconiaAntonino ParisiSalvatore StivalaAlessandro BusaccaGiorgio FallicaDelfo SanfilippoD. Agròsubject
Silicon photonicsMaterials scienceSiliconPhysics::Instrumentation and Detectorsbusiness.industryHybrid silicon laserchemistry.chemical_elementSettore ING-INF/02 - Campi ElettromagneticiOptical powerSubstrate (electronics)Settore ING-INF/01 - ElettronicaElectronic Optical and Magnetic MaterialsResponsivityOpticsSilicon photomultiplierchemistryOptoelectronicsContinuous waveAvalanche photodiode (APD) photodetector responsivity silicon photomultiplier (SiPM) single-photon avalanche diode (SPAD)Electrical and Electronic Engineeringbusinessdescription
We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-11-01 | IEEE Transactions on Electron Devices |