0000000000594820
AUTHOR
Massimo Mazzillo
PPG/ECG Multisite Combo System Based on SiPM Technology
Two versions of a PPG/ECG combined system have been realized and tested. In a first version a multisite system has been equipped by integrating 3 PPG optodes and 3 ECG leads, whereas in another setup a portable version has been carried out. Both versions have been realized by equipping the optical probes with SiPM detectors. SiPM technology is expected to bring relevant advantages in PPG systems and overcome the limitations of physiological information extracted by state of the art PPG, such as poor sensitivity of detectors used for backscattered light detection and motion artifacts seriously affecting the measurements repeatability and pulse waveform stability. This contribution presents t…
Responsivity measurements of silicon carbide Schottky photodiodes in the UV range
We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky UV detectors, fabricated employing Ni 2 Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I-V characteristics as a function of temperature and C-V characteristics. Responsivity measurements of the devices, as function of wavelength in the UV range, of package temperature and of applied reverse bias are reported. We also compared devices featuring different strip pitch sizes, discussing their performances, and found the device exhibiting best results.
Design and development of a fNIRS system prototype based on SiPM detectors
Functional Near Infrared Spectroscopy (fNIRS) uses near infrared sources and detectors to measure changes in absorption due to neurovascular dynamics in response to brain activation. The use of Silicon Photomultipliers (SiPMs) in a fNIRS system has been estimated potentially able to increase the spatial resolution. Dedicated SiPM sensors have been designed and fabricated by using an optimized process. Electrical and optical characterizations are presented. The design and implementation of a portable fNIRS embedded system, hosting up to 64 IR-LED sources and 128 SiPM sensors, has been carried out. The system has been based on a scalable architecture whose elementary leaf is a flexible board …
Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring
We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of fu…
Responsivity measurements of N-on-P and P-on-N silicon photomultipliers in the continuous wave regime
We report the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon P-type and N-type substrate respectively. Responsivity measurements have been performed with an incident optical power from tenths of picowatts to hundreds of nanowatts and on a broad spectrum, ranging from ultraviolet to near infrared (340-820 nm). For both classes of investigated SiPMs, responsivity shows flat response versus the optical incident power, when a preset overvoltage and wavelength is applied . More in detail, this linear behavior extends up to about 10 nW for lower overvoltages, while a shrink is observ…
Extensive electrical model of large area silicon photomultipliers
Abstract In this paper the full electrical model of silicon photomultipliers fabricated at STMicroelectronics Catania R&D clean room facilities is presented. An accurate investigation on both SiPM single microcell and entire SiPM structure to extrapolate all the electrical elements has been executed by means of dedicated characterizations carried out on appropriate layout structure. The electrical simulations results are compared to the experimental data showing a good fit and therefore verifying the accuracy of the proposed model. This model can be used to describe all the SiPMs with different sizes manufactured using the same technology. Moreover, starting from this extensive electrical m…
Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime
We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
Electro-optical characterization of new classes of Silicon Carbide UV photodetectors
In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in $\hbox{Ni}_{2}\hbox{Si}$ . These devices exploit the pinch-off surface effect. $I$ – $V$ and $C$ – $V$ characteristics, as functions of temperature, were measured in dark conditions. In addition, we have carried out responsivity measurements, for wavelengths ranging from 200 to 400 nm, at varying package temperature and applied reverse bias. A comparison among devices having different strip pitch sizes has been performed, thus finding out that the 10- $\mu\hbox{m}$ pitch class demonstrates …
Preliminary radiation hardness tests of single photon Si detectors
Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25 degrees C to 65 degrees C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3x10(7)-5x10(10) cm(-2), and X-rays irradiations in the range 0.5-20 krad(Si). Optical characterization was performed using a laser at 659 nm and opportunely chosen filters to vary the…