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RESEARCH PRODUCT
Responsivity measurements of silicon carbide Schottky photodiodes in the UV range
Luciano CurcioD. AgròAndrea AndoD. SanfilippoGabriele AdamoAlessandro TomasinoC. GiaconiaGiorgio FallicaAlessandro BusaccaMassimo MazzilloSalvatore StivalaAntonino Parisisubject
Materials sciencebusiness.industryWide-bandgap semiconductorPhotodetectorSchottky diodeSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - ElettronicaTemperature measurementSchottky diodes silicon compounds photodetectors UV light silicon carbide responsivityPhotodiodelaw.inventionResponsivitychemistry.chemical_compoundchemistrylawSilicon carbideOptoelectronicsPhotonicsbusinessdescription
We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky UV detectors, fabricated employing Ni 2 Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I-V characteristics as a function of temperature and C-V characteristics. Responsivity measurements of the devices, as function of wavelength in the UV range, of package temperature and of applied reverse bias are reported. We also compared devices featuring different strip pitch sizes, discussing their performances, and found the device exhibiting best results.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2014-05-01 | 2014 Third Mediterranean Photonics Conference |