0000000000118029

AUTHOR

D. Agrò

showing 15 related works from this author

PPG embedded system for blood pressure monitoring

2014

In this work, we have designed and implemented a microcontroller-based embedded system for blood pressure monitoring through a PhotoPlethysmoGraphic (PPG) technique. In our system, it is possible to perform PPG measurements via reflectance mode. Hardware novelty of our system consists in the adoption of Silicon PhotoMultiplier detectors. The signal received from the photodetector is used to calculate the instantaneous heart rate and therefore the heart rate variability. The obtained results show that, by using our system, it is possible to easily extract both the PPG and the breath signal. These signals can be used to monitor the patients during the convalescence both in hospital and at hom…

Materials scienceSettore INF/01 - InformaticaPhotoPlethysmoGraphybusiness.industryDetectorPhotodetectorSettore ING-INF/02 - Campi ElettromagneticiSignalReflectivitySilicon PhotoMultiplierembedded systemMicrocontrollerSilicon photomultipliersensorEmbedded systemHeart rate variabilityBlood pressure monitoringsense organsbusinessComputer hardware2014 AEIT Annual Conference - From Research to Industry: The Need for a More Effective Technology Transfer (AEIT)
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Signal to Noise Ratio of Silicon Photomultipliers measured in the Continuous Wave Regime

2014

We performed a Signal to Noise Ratio characterization, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the overall current flowing to the device. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function …

Noise temperatureMaterials sciencePhysics::Instrumentation and Detectorsbusiness.industryphotomultipliers sipm snr detector siliconNoise spectral densityElectrical engineeringShot noiseSettore ING-INF/02 - Campi ElettromagneticiNoise figureNoise (electronics)Settore ING-INF/01 - ElettronicaSignal-to-noise ratioOpticsNoise generatorFlicker noisebusiness
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Responsivity measurements of silicon carbide Schottky photodiodes in the UV range

2014

We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky UV detectors, fabricated employing Ni 2 Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I-V characteristics as a function of temperature and C-V characteristics. Responsivity measurements of the devices, as function of wavelength in the UV range, of package temperature and of applied reverse bias are reported. We also compared devices featuring different strip pitch sizes, discussing their performances, and found the device exhibiting best results.

Materials sciencebusiness.industryWide-bandgap semiconductorPhotodetectorSchottky diodeSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - ElettronicaTemperature measurementSchottky diodes silicon compounds photodetectors UV light silicon carbide responsivityPhotodiodelaw.inventionResponsivitychemistry.chemical_compoundchemistrylawSilicon carbideOptoelectronicsPhotonicsbusiness2014 Third Mediterranean Photonics Conference
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Design and realization of a portable multichannel continuous wave fNIRS

2014

A design and implementation of a portable functional Near InfraRed Spectroscopy embedded system prototype is described. In this theoretical and experimental work, we present an embedded system hosting 64 LED sources and 128 Silicon PhotoMultiplier detectors (SiPM). The elementary part of the structure is a flexible probe “leaf” consisting of 16 SiPMs, 4 couples of LEDs, each operating at two wavelengths, and a temperature sensor. The hardware system is based on an ARM main microcontroller that allows to perform both the switching time of LEDs and the acquisition of the SiPM outputs. The performed preliminary experimental tests achieved very promising results, thus demonstrating the effectiv…

Materials scienceDetectorSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - ElettronicaSilicon PhotoMultiplierlaw.inventionSwitching timeembedded systemMicrocontrollerSilicon photomultiplierlawElectronic engineeringFunctional Near Infrared SpectroscopyFunctional near-infrared spectroscopyContinuous wavephotodetectorRealization (systems)Light-emitting diode2014 AEIT Annual Conference - From Research to Industry: The Need for a More Effective Technology Transfer (AEIT)
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Design and development of a fNIRS system prototype based on SiPM detectors

2014

Functional Near Infrared Spectroscopy (fNIRS) uses near infrared sources and detectors to measure changes in absorption due to neurovascular dynamics in response to brain activation. The use of Silicon Photomultipliers (SiPMs) in a fNIRS system has been estimated potentially able to increase the spatial resolution. Dedicated SiPM sensors have been designed and fabricated by using an optimized process. Electrical and optical characterizations are presented. The design and implementation of a portable fNIRS embedded system, hosting up to 64 IR-LED sources and 128 SiPM sensors, has been carried out. The system has been based on a scalable architecture whose elementary leaf is a flexible board …

business.industryComputer scienceDetectorNear-infrared spectroscopySettore ING-INF/02 - Campi ElettromagneticiNear Infrared SpectroscopySilicon PhotomultipliersReflectivitySettore ING-INF/01 - ElettronicaImaging phantomlaw.inventionOpticsSilicon photomultiplierlawOptoelectronicsSensitivity (control systems)businessEmbedded SystemsImage resolutionSilicon PhotomultiplierLight-emitting diode
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Design and implementation of a portable fNIRS embedded system

2015

We report on the design, development and operation of a portable, low cost, battery-operated, multi-channel, functional Near Infrared Spectroscopy embedded system, hosting up to 64 optical sources and 128 Silicon PhotoMultiplier optical detectors. The system is realized as a scalable architecture, whose elementary leaf consists of a probe board provided with 16 SiPMs, 4 couples of bi-color LED, and a temperature sensor, built on a flexible stand. The hardware structure is very versatile because it is possible to handle both the switching time of the LED and the acquisition of the photodetectors, via an ARM based microcontroller.

Optical detectorsbusiness.industryComputer sciencePhotodetectorInfrared spectroscopyScalable architectureSilicon photomultiplierSettore ING-INF/01 - ElettronicaIndustrial and Manufacturing EngineeringSwitching timeMicrocontrollerSilicon photomultiplierEmbedded systemFunctional near-infrared spectroscopyFNIRS embedded systembusinessInfrared spectroscopyComputer hardware
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Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring

2014

We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of fu…

Materials sciencebusiness.industryDetectorSchottky diodeSTRIPSmedicine.disease_causeSettore ING-INF/01 - ElettronicaPhotodiodelaw.inventionResponsivityWavelengthchemistry.chemical_compoundOpticschemistrylawmedicineSilicon carbideOptoelectronicssic 4h-sic uv photodiodes schottky detectorsbusinessUltravioletSilicon Photonics IX
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Responsivity measurements of N-on-P and P-on-N silicon photomultipliers in the continuous wave regime

2013

We report the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon P-type and N-type substrate respectively. Responsivity measurements have been performed with an incident optical power from tenths of picowatts to hundreds of nanowatts and on a broad spectrum, ranging from ultraviolet to near infrared (340-820 nm). For both classes of investigated SiPMs, responsivity shows flat response versus the optical incident power, when a preset overvoltage and wavelength is applied . More in detail, this linear behavior extends up to about 10 nW for lower overvoltages, while a shrink is observ…

PhotomultiplierMaterials scienceSiliconbusiness.industrychemistry.chemical_elementOptical powerSubstrate (electronics)Settore ING-INF/01 - ElettronicaSiPM Silicon Photomultiplier SPAD Photodiode Quantum Detector Continuous WaveResponsivityWavelengthOpticsSilicon photomultiplierchemistryOptoelectronicsContinuous wavebusiness
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Silicon Photomultipliers Signal-to-Noise Ratio in the Continuous Wave Regime

2014

 Abstract— We report on Signal-to-Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a class of silicon photomultipliers fabricated in planar technology on silicon p- type substrate. Signal-to-Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal-to-Noise Ratio, as a function of the tempe…

PhotomultiplierMaterials sciencePhysics::Instrumentation and Detectorsbusiness.industryAmplifierElectrical engineeringShot noiseSettore ING-INF/02 - Campi ElettromagneticiNoise (electronics)Settore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSignal-to-noise ratioOpticsSilicon photomultiplierSiPM SNR noise silicon detector photomultiplierContinuous waveElectrical and Electronic EngineeringbusinessDark current
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Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

2013

We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.

Silicon photonicsMaterials scienceSiliconPhysics::Instrumentation and Detectorsbusiness.industryHybrid silicon laserchemistry.chemical_elementSettore ING-INF/02 - Campi ElettromagneticiOptical powerSubstrate (electronics)Settore ING-INF/01 - ElettronicaElectronic Optical and Magnetic MaterialsResponsivityOpticsSilicon photomultiplierchemistryOptoelectronicsContinuous waveAvalanche photodiode (APD) photodetector responsivity silicon photomultiplier (SiPM) single-photon avalanche diode (SPAD)Electrical and Electronic EngineeringbusinessIEEE Transactions on Electron Devices
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Electro-optical characterization of new classes of Silicon Carbide UV photodetectors

2014

In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in $\hbox{Ni}_{2}\hbox{Si}$ . These devices exploit the pinch-off surface effect. $I$ – $V$ and $C$ – $V$ characteristics, as functions of temperature, were measured in dark conditions. In addition, we have carried out responsivity measurements, for wavelengths ranging from 200 to 400 nm, at varying package temperature and applied reverse bias. A comparison among devices having different strip pitch sizes has been performed, thus finding out that the 10- $\mu\hbox{m}$ pitch class demonstrates …

lcsh:Applied optics. PhotonicsMaterials scienceFabricationbusiness.industrysic uv photodetector detector silicon carbide responsivitySchottky diodePhotodetectorlcsh:TA1501-1820Settore ING-INF/02 - Campi ElettromagneticiSTRIPSTemperature measurementSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsPhotodiodelaw.inventionResponsivitychemistry.chemical_compoundchemistrylawSilicon carbideOptoelectronicslcsh:QC350-467Electrical and Electronic Engineeringbusinesslcsh:Optics. Light
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Electrochemical Conversion of Dichloroacetic Acid to Chloroacetic Acid in Conventional Cell and in Two Microfluidic Reactors

2013

The electrochemical conversion of dichloroacetic acid to chloracetic acid is investigated in conventional cells and in microreactors. Two different microreactors are used: the first is a filter press cell equipped with PTFE micrometric spacers, easy to assemble and disassemble and available for a large variety of electrodes and solvents; the second is made using an adhesive spacer, micromilling and press and could easily be developed on an industrial scale. The electrochemical synthesis is performed successfully in the microreactors equipped with a graphite cathode under proper operative conditions. The performance of the process strongly depends on the nature of the cathode and, for micror…

Supporting electrolyteChloroacetic acidElectrochemical Microfluidic Reactors Chloroacetic AcidDichloroacetic acidNanotechnologyElectrochemistryCatalysisCathodelaw.inventionchemistry.chemical_compoundchemistrylawElectrodeElectrochemistryGraphiteMicroreactorChemElectroChem
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SNR measurements of silicon photomultipliers in the continuous wave regime

2014

We report on our Signal-to-Noise Ratio (SNR) measurements carried out, in the continuous wave regime, at different frequencies and at various temperatures, on a novel class of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon p-type substrate. SNR of SiPMs is given by the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square (RMS) deviation of the same current. In our measurements, we have employed a 10 Hz equivalent noise bandwidth, around the lock-in amplifier reference frequency. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current, while background light …

PhysicsPhotomultiplierPhysics::Instrumentation and Detectorsbusiness.industrysipm photomultiplier snr noise siliconAmplifierShot noiseNoise (electronics)Settore ING-INF/01 - ElettronicaRoot mean squareOpticsSilicon photomultiplierSignal-to-noise ratio (imaging)businessDark current
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Brain Monitoring Via an Innovative CW-FNIRS System

2015

Functional Near InfraRed Spectroscopy (fNIRS) is an imaging technique mainly devoted to human brain monitoring. It is used as a non-invasive technique, in medical field, in order to measure the oxygen concentration of blood. This because the relatively good transparency of biological materials in the near infrared allows sufficient photon transmission through tissues. Within the so-called fNIRS range (650-900 nm), the main absorbers are blood chromophores, in particular the oxygenated and deoxygenated haemoglobin (HbO2 and Hb, respectively). When two or more wavelengths are used, changes of such chromophores can be computed by employing the modified Beer-Lambert law, thus providing importan…

fnirs continuous wave sipm near infrared spectroscopy brainSettore ING-INF/01 - Elettronica
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Design and realization of a portable continuous wave fNIRS

2015

A design and implementation of a portable functional Near InfraRed Spectroscopy embedded system prototype is described. In this theoretical and experimental work, we present an embedded system hosting 64 LED sources and 128 Silicon PhotoMultiplier detectors (SiPM). The elementary part of the structure is a flexible probe “leaf” consisting of 16 SiPMs, 4 couples of LEDs, each operating at two wavelengths, and a temperature sensor. The hardware system is based on an ARM main microcontroller that allows to perform both the switching time of LEDs and the acquisition of the SiPM outputs. The performed preliminary experimental tests achieved very promising results, thus demonstrating the effectiv…

fnirs near infrared spectroscopy sipmSettore ING-INF/01 - Elettronica
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