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RESEARCH PRODUCT

Silicon Photomultipliers Signal-to-Noise Ratio in the Continuous Wave Regime

Luciano CurcioSalvatore StivalaAlessandro BusaccaGiuseppe Costantino GiaconiaGiorgio FallicaGabriele AdamoD. AgròAlessandro TomasinoAntonino Parisi

subject

PhotomultiplierMaterials sciencePhysics::Instrumentation and Detectorsbusiness.industryAmplifierElectrical engineeringShot noiseSettore ING-INF/02 - Campi ElettromagneticiNoise (electronics)Settore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSignal-to-noise ratioOpticsSilicon photomultiplierSiPM SNR noise silicon detector photomultiplierContinuous waveElectrical and Electronic EngineeringbusinessDark current

description

 Abstract— We report on Signal-to-Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a class of silicon photomultipliers fabricated in planar technology on silicon p- type substrate. Signal-to-Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal-to-Noise Ratio, as a function of the temperature of the SiPM package and at different bias voltages. Our results show the outstanding performance of this class of SiPMs even without the need of any cooling system.

yearjournalcountryeditionlanguage
2014-11-01
10.1109/jstqe.2014.2346489http://hdl.handle.net/10447/98502