Search results for "SPIN RELAXATION"

showing 10 items of 39 documents

High-field nuclear spin relaxation in liquids and solids

1990

The authors generalise the standard theory of nuclear spin relaxation to situations in which the Markovian approximation is not applicable. Expressions for generalised frequency-dependent spin relaxation functions are presented. They show that under high-field conditions the relaxation of longitudinal magnetisation is exponential independent of the particular time dependence of the correlation functions.

Density matrixSpin–spin relaxationMagnetizationCondensed matter physicsChemistrySpin–lattice relaxationEquations of motionRelaxation (physics)Condensed Matter::Strongly Correlated ElectronsGeneral Materials ScienceCondensed Matter PhysicsCole–Cole equationExponential functionJournal of Physics: Condensed Matter
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Finite-frequency spin susceptibility and spin pumping in superconductors with spin-orbit relaxation

2020

Static spin susceptibility of superconductors with spin-orbit relaxation has been calculated in the seminal work of A.A. Abrikosov and L.P. Gor'kov [Sov. Phys. JETP, {\bf 15}, 752 (1962)]. Surprisingly the generalization of this result to finite frequencies has not been done despite being quite important for the modern topic of superconducting spintronics. The present paper fills this gap by deriving the analytical expression for spin susceptibility. The time-dependent spin response is shown to be captured by the quasiclassical Eilenberger equation with collision integrals corresponding to the ordinary and spin-orbit scattering. Using the developed formalism we study the linear spin pumping…

suprajohtavuusFOS: Physical sciences02 engineering and technologyspin dynamics01 natural sciencessuprajohteetSuperconductivity (cond-mat.supr-con)Condensed Matter::Superconductivity0103 physical sciences010306 general physicsPhysicsSuperconductivityspintronicsSpin pumpingSpintronicsCondensed matter physicsScatteringCondensed Matter - Superconductivity021001 nanoscience & nanotechnologyspin relaxationspin-orbit couplingFormalism (philosophy of mathematics)Ferromagnetismspin (kvanttimekaniikka)Condensed Matter::Strongly Correlated Electrons0210 nano-technology
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Enhancement of electron spin lifetime in GaAs crystals: the benefits of dichotomous noise

2013

The electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field is investigated. Two different sources of fluctuations are considered: (i) a symmetric dichotomous noise and (ii) a Gaussian correlated noise. Monte Carlo numerical simulations show, in both cases, an enhancement of the spin relaxation time by increasing the amplitude of the external noise. Moreover, we find that the electron spin lifetime versus the noise correlation time: (i) increases up to a plateau in the case of dichotomous random fluctuations, and (ii) shows a nonmonotonic behaviour with a maximum in the case of bulks subjected to a Gaussian correlated noise.

PhysicsCondensed matter physicsStatistical Mechanics (cond-mat.stat-mech)Condensed Matter - Mesoscale and Nanoscale PhysicsHigh-field and nonlinear effectsGaussianMonte Carlo methodGeneral Physics and AstronomyFOS: Physical sciencesNoise correlationExternal noiseSpin relaxation and scatteringPlateau (mathematics)Noise processes and phenomenaSettore FIS/03 - Fisica Della Materiasymbols.namesakeAmplitudeElectric fieldMesoscale and Nanoscale Physics (cond-mat.mes-hall)symbolsNoise (radio)Condensed Matter - Statistical Mechanics
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Monte Carlo Simulation of Electron Dynamics in Doped Semiconductors Driven by Electric Fields: Harmonic Generation, Hot-Carrier Noise and Spin Relaxa…

2011

In solid state electronics the miniaturization of integrated circuits implies that, even at moderate applied voltages, the components can be exposed to very intense electric fields. Advances in electronics push the devices to operate also under cyclostationary conditions, i.e. under large-signal and time-periodic conditions. A main consequence of this fact is that circuits exhibit a strongly nonlinear behavior. Furthermore, semiconductor based devices are always imbedded into a noisy environment that could strongly affect their performance, setting the lower limit for signal detection in electronic circuits. For this reason, to fully understand the complex scenario of the nonlinear phenomen…

PhysicsCondensed matter physicsSpintronicsMonte Carlo methodIntegrated circuitNoise (electronics)Settore FIS/03 - Fisica Della Materialaw.inventionlawVelocity overshootHigh harmonic generationRelaxation (physics)ElectronicsDoped SemiconductorsMonte Carlo method Harmonic Generation Electronic noise Electron Spin relaxation
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Noise Enhanced Stability Phenomenon in Electron Spin Dynamics

2012

Possible utilization of the electron spin as an information carrier in electronic devices is an engaging challenge for future spin-based electronics. In these new devices, the information stored in a system of polarized electron spins, is transferred by applying an external electric field and finally detected. However, each initial non-equilibrium magnetization decays both in time and distance during the transport. Because of increasing miniaturization, to avoid too much intense electric fields, which could lead the system to exhibit a strongly nonlinear physical behavior, applied voltages are very low. Low voltages are subjected to the background noise; hence, it is mandatory to understand…

Noise-induced effectSpin relaxationMonte Carlo simulationSettore FIS/03 - Fisica Della MateriaGallium Arsenide
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New insights into electron spin dynamics in the presence of correlated noise

2011

The changes of the spin depolarization length in zinc-blende semiconductors when an external component of correlated noise is added to a static driving electric field are analyzed for different values of field strength, noise amplitude and correlation time. Electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin depolarization is studied by examinating the decay of the initial spin polarization of the conduction electrons through the D'yakonov-Perel process, the only relevant relaxation mechanism in III-V crystals. Our results show that, f…

Field (physics)DephasingElectronsField strengthSpin relaxation and scatteringNoise processes and phenomenaSettore FIS/03 - Fisica Della MateriaMagneticsDistribution theory and Monte Carlo studieElectric fieldElectrochemistryScattering RadiationGeneral Materials ScienceCondensed Matter - Statistical MechanicsPhysicsCondensed matter physicsSpin polarizationChemistry PhysicalRelaxation (NMR)High-field and nonlinear effectCondensed Matter PhysicsSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Condensed Matter - Other Condensed MatterAmplitudeCrystallizationMonte Carlo MethodNoise (radio)Journal of Physics: Condensed Matter
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Supercurrent-induced charge-spin conversion in spin-split superconductors

2018

We study spin-polarized quasiparticle transport in a mesoscopic superconductor with a spin-splitting field in the presence of coflowing supercurrent. In such a system, the nonequilibrium state is characterized by charge, spin, energy, and spin-energy modes. Here we show that in the presence of both spin splitting and supercurrent, all these modes are mutually coupled. As a result, the supercurrent can convert charge imbalance, which in the presence of spin splitting decays on a relatively short scale, to a long-range spin accumulation decaying only via inelastic scattering. This effect enables coherent charge-spin conversion controllable by a magnetic flux, and it can be detected by studyin…

spin accumulationspin currenttransport propertiessuperfluid densityCondensed Matter::SuperconductivityCondensed Matter::Strongly Correlated Electronsspin relaxationsuprajohteet
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Phonon-induced spin relaxation of conduction electrons in silicon crystals

2014

Experimental works managing electrical injection of spin polarization in n-type and p-type silicon have been recently carried out up to room-temperature. In spite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on phonon-induced electron spin depolarization in silicon structures, in a wide range of values of lattice temperature, doping concentration and amplitude of external fields, is still at a developing stage. In order to investigate the spin transport of conduction electrons in lightly doped n-type Si crystals, a set of semiclassical multiparticle Monte Carlo simulations has been carried out. The mean spin …

Materials scienceSiliconCondensed matter physicsSpintronicsSpin polarizationPhononMonte Carlo methodsiliconchemistry.chemical_elementElectronSettore FIS/03 - Fisica Della MateriaSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)electron spin relaxation.chemistrySpinplasmonicsSpin (physics)Monte Carlo simulation2014 International Workshop on Computational Electronics (IWCE)
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Reorientations and translations in a fragile glass-former: magnetic resonance studies of meta-fluoroaniline

1999

Abstract The rotational dynamics in supercooled liquid and glassy meta-fluoroaniline was studied using proton and fluorine spin-lattice relaxation times. It is shown that while proton relaxation is dominated by homonuclear relaxation, for fluorine heteronuclear relaxation prevails. The results could be well described using a distribution of correlation times. The mean correlation times show pronounced deviations from the simple Arrhenius law. In addition translational self-diffusion coefficients were measured for T>200 K using a static magnetic field gradient technique.

Arrhenius equationCondensed matter physicsProtonChemistryOrganic ChemistrySpin–lattice relaxationMagnetostaticsHomonuclear moleculeAnalytical ChemistryInorganic ChemistrySpin–spin relaxationsymbols.namesakeHeteronuclear moleculesymbolsRelaxation (physics)SpectroscopyJournal of Molecular Structure
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Raman and nuclear magnetic resonance investigation of alkali metal vapor interaction with alkene-based anti-relaxation coating.

2016

The use of anti-relaxation coatings in alkali vapor cells yields substantial performance improvements by reducing the probability of spin relaxation in wall collisions by several orders of magnitude. Some of the most effective anti-relaxation coating materials are alpha-olefins, which (as in the case of more traditional paraffin coatings) must undergo a curing period after cell manufacturing in order to achieve the desired behavior. Until now, however, it has been unclear what physicochemical processes occur during cell curing, and how they may affect relevant cell properties. We present the results of nondestructive Raman-spectroscopy and magnetic-resonance investigations of the influence …

Materials scienceDouble bondphysics.chem-phFOS: Physical sciencesGeneral Physics and Astronomyengineering.material010402 general chemistry01 natural sciencessymbols.namesakeEngineeringCoatingPhysics - Chemical Physics0103 physical sciencesPhysical and Theoretical Chemistry010306 general physicsSpin relaxationCuring (chemistry)Chemical Physics (physics.chem-ph)chemistry.chemical_classificationPhysicochemical ProcessesCondensed Matter - Materials ScienceChemical PhysicsAlkeneMaterials Science (cond-mat.mtrl-sci)Alkali metalcond-mat.mtrl-sci0104 chemical sciences3. Good healthchemistryChemical engineeringPhysical SciencesChemical SciencessymbolsengineeringRaman spectroscopyBiotechnologyThe Journal of chemical physics
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