Search results for "Sapphire"
showing 10 items of 114 documents
Structural characterization of CdTe layers grown on (0001) sapphire by MOCVD
2004
Abstract We report on the growth of CdTe layers directly onto (0 0 0 1) sapphire substrates by MOCVD. The structure and morphology of the layers have been investigated as a function of growth temperature and II/VI precursor molar ratio by X-ray diffraction and scanning electron microscopy. The texture of the samples has revealed the existence of a temperature threshold, with higher growth temperatures resulting on completely (1 1 1) oriented layers. Some of these layers contained microtwins, as indicated by the extra peaks in the {4 2 2} Φ scans, leading to the existence of two different domains. The structural quality of each domain, as well as of the sample as a whole, has been determined…
Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire
1997
Selective area (SA) Hg1 − xCdxTesapphire layers have been grown using the recently developed technique of the vapor-phase epitaxy (VPE) of Hg1 − xCdxTe layers on CdTesapphire heteroepitaxial substrates (HS), which we have called “VPE on HS technique” (Sochinskii et al., J. Crystal Growth 149 (1995) 35; 161 (1996) 195). First, planar CdTe (1 1 1) 5–7 μm thick layers were grown on sapphire (0 0 0 1) wafers by metalorganic vapor-phase epitaxy (MOVPE) at 340°C for 1–2.5 h using dimethylcadmium and di-isopropyltellurium as precursors. Second, CdTe/sapphire mesas were formed using standard photolithography in the form of alternating parallel linear arrays consisting of 500 × 70 μm2 elements. Thir…
Study of the chemically activated sublimation of ZnSe
1999
Abstract The reactions and processes involved in the growth of ZnSe by chemically activated sublimation in a H 2 atmosphere are studied. The rate of transport as a function of source and substrate temperatures and the difference between them are determined from close spacing vapour transport experiments. According to this process, ZnSe layers are deposited on sapphire substrates by short distance chemically assisted sublimation. The experimental results are analysed and the thermodynamic constants of the transport are determined using a theoretical model for kinetically controlled processes, assuming water to act as sublimation catalyst. A preliminary optical and structural characterisation…
Observability of the Risken–Nummedal–Graham–Haken instability in Nd:YAG lasers
2003
Multilongitudinal mode instability in ring Nd:YAG lasers is theoretically analyzed. After we review the way in which the standard two-level laser theory applies to this laser we extend the theoretical treatment to include transverse effects. We do this by taking into account the finite transverse section of the active medium and by assuming a Gaussian transverse distribution for the intracavity field. Finally we demonstrate that multimode emission develops whenever the intracavity field waist diameter is almost equal to the active rod diameter. We conclude that continuous-wave diode-pumped Nd:YAG lasers with low cavity losses are good candidates for the observation of the Risken–Nummedal–Gr…
Some aspects of the MOCVD growth of ZnO on sapphire using tert-butanol
2002
The growth of ZnO on (0001) sapphire substrates using metalorganic chemical vapor deposition is reported. Diethylzinc and tertiarybutanol were used, respectively, as zinc and oxygen sources. Growth conditions are detailed such as the substrate temperature and the precursors partial pressures. The influence of the cleanness state of the MOCVD silica reactor is emphasized, since it modifies both layer quality and crystalline orientation, and since it also affects growth process steps like sapphire thermal treatment and buffer layer deposition. ZnO epitaxial layers are characterised by scanning electron microscopy (SEM) to assess the surface orientation and morphology, X-ray diffraction (XRD) …
Study of the bandgap renormalization in Ga-doped ZnO films by means of optical absorption under high pressure and photoelectron spectroscopy
2008
Abstract In this paper we investigate the band gap renormalization in heavily Ga-doped ZnO thin films deposited by pulsed laser deposition on C -plane sapphire and mica substrates. Thin films were studied by ultraviolet photoelectron spectroscopy and also by optical measurements under high pressure. The Fermi-level shift, as obtained from ultraviolet photoelectron experiments, exhibits a relatively small and positive shift (about 0.3 eV) with respect to the valence band for increasing electron concentrations up to 1021 cm−3. The optical gap exhibits a much larger increase (0.6 eV) for the same concentration range. Absorption measurements under pressure show that the pressure coefficient of …
Tunability of Injection Seeded High-Repetition Rate Ti:Sapphire Laser Far Off the Gain Peak
2009
We have investigated a tunability of a high‐repetition rate Ti:Sapphire laser seeded off the gain peak. By applying a birefringent filter, the 7 kHz injection seeded Ti:Sapphire laser system was operated with the average seeding efficiency of over 90% and the output power of over 1 W on the spectral range of 900–930 nm. We conclude that the birefringent filter suited for widely tunable operation of the injection seeded Ti:Sapphire laser system operated at high repetition rate.
Optical, thermal, electrical, damage, and phase-matching properties of lithium selenoindate
2010
Lithium selenoindate (LiInSe2) is a new nonlinear chalcogenide biaxial crystal, related to LiInS2 and transparent from 0.54 to 10 μm at the 50% level (10 mm thickness), which has been successfully grown in large sizes and with good optical quality. We report on what we believe to be new physical properties that are relevant for laser and nonlinear optical applications and summarize all relevant characteristics, both from the literature and as measured in the present work. With respect to AgGaS(e)2 ternary chalcopyrite materials, LiInSe2 displays a nearly isotropic thermal expansion behavior with three- to five-times-larger thermal conductivities associated with high optical damage threshold…
Thin film preparation of the low charge carrier density Kondo system CeSb
1999
Abstract We report the thin film preparation of CeSb by means of molecular beam epitaxy (MBE) onto sapphire (1 1 −2 0) substrates. Above a substrate temperature of about 300°C CeSb crystallizes in (0 0 1) orientation. The growth mode of the films changes from a fiber textured to an epitaxial mode for deposition temperatures above 900°C. Although the specific resistivity is enhanced the characteristic energy scales, like the Kondo temperature TK and the magnetic ordering temperature TN, are not changed significantly.
Strain effects and phonon-plasmon coupled modes in Si-doped AlN
2009
The E 2h and A 1 (LO) phonon modes of AlN films grown on sapphire are analyzed by Raman scattering as a function of silicon doping for concentrations covering from 5.5 x 10 19 cm ―3 to 5.2 x 10 21 cm ―3 . For high doping levels the appearance of a mode around 520 cm ―1 indicates the precipitation of crystalline silicon in the samples and its inhomogeneous incorporation to the AlN layer. The frequency of this mode shifts to lower energies with doping, indicating that the silicon crystals are embedded in the AlN lattice and under tensile strain. On the other hand, the AlN phonon modes are blue-shifted due to the compressive strain as a result of the silicon incorporation. This strain is parti…