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RESEARCH PRODUCT
Thin film preparation of the low charge carrier density Kondo system CeSb
H. AdrianP. HaibachJ. OsterH. MeffertMichael Huthsubject
Materials scienceCondensed matter physicsElectrical resistivity and conductivitySapphireSubstrate (electronics)Electrical and Electronic EngineeringThin filmCondensed Matter PhysicsEpitaxyNéel temperatureCharacteristic energyElectronic Optical and Magnetic MaterialsMolecular beam epitaxydescription
Abstract We report the thin film preparation of CeSb by means of molecular beam epitaxy (MBE) onto sapphire (1 1 −2 0) substrates. Above a substrate temperature of about 300°C CeSb crystallizes in (0 0 1) orientation. The growth mode of the films changes from a fiber textured to an epitaxial mode for deposition temperatures above 900°C. Although the specific resistivity is enhanced the characteristic energy scales, like the Kondo temperature TK and the magnetic ordering temperature TN, are not changed significantly.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1999-01-01 | Physica B: Condensed Matter |