0000000000005941
AUTHOR
J. Oster
Guided vortex motion in Nb films on facetted substrate surfaces
Abstract Anisotropy of the pinning force in a superconductor can cause a guiding effect on the vortices, which leads to the appearance of new components in the galvanomagnetic quantities of the sample. In this case one can observe an additional odd magnetoresistive component with respect to magnetic field reversal. Furthermore, an even contribution to the Hall voltage is observed. Guided motion of vortices in Nb films on facetted α-Al2O3 (1 0 1 0) was found by measuring the longitudinal and transversal resistivities of three films with transport current directed parallel, perpendicular and at an angle of 45° with respect to the facet ridges. Field inversion was used to separate the even and…
Magnetotransport properties of epitaxial - and -oriented CeSb thin films
Abstract We present the electronic magnetotransport properties of (1 0 0) - and (1 1 1) -oriented CeSb thin films. The samples were grown epitaxially by molecular beam epitaxy onto sapphire (1 1 2 0) and (0 0 0 1) substrates. The temperature-dependent resistivity is in full correspondence with the behaviour known from bulk material. For (1 0 0) -oriented films the analysis of the temperature and magnetic field-dependent magnetoresistivity results in a H/T phase diagram analogous to that of bulk samples. For (1 1 1) -oriented films slight deviations were observed. In Hall-effect measurements of (1 0 0) -oriented samples a sign change of the Hall coefficient occurred which is in contrast to m…
High-resolution transmission electron microscopic investigations of molybdenum thin films on faceted α-Al2O3
Epitaxially grown Mo films on a faceted corundum (α-Al2O3)mplane were investigated by transmission electron microscopy. Low- and high-resolution images were taken from a cross-section specimen cut perpendicular to the facets. It was possible to identify unambiguously the crystallographic orientation of these facets and explain the considerable deviation (∼10°) of the experimental interfacet angle, as measured with atomic force microscopy (AFM), from the expected value. For the first time, proof is given for a smooth \{10\bar{1}1\} facet and a curvy facet with orientation near to \{10\bar{1}\bar{2}\}. Moreover, the three-dimensional epitaxial relationship of an Mo film on a faceted corundumm…
Magnetic and magnetoelastic properties of epitaxial (2 1 1)-oriented RFe2 (R=Dy, Tb) thin films
Abstract Epitaxial, (2 1 1)-oriented thin films of RFe 2 (R: rare earth; here: Dy, Tb) were deposited by molecular beam epitaxy on faceted and non-faceted α - Al 2 O 3 ( 1 0 1 ¯ 0 ) (m-plane) substrates utilizing a 15 A thin Fe seed layer and a 500 A Nb buffer layer. Detailed X-ray diffraction analyses revealed a twin-free epitaxial (2 1 1)-oriented growth of buffer layer and film. The magnetostrictive layer RFe 2 , as well as the template layers Nb and Mo exhibited the same crystallographic in-plane orientation with regard to the substrate. The same epitaxial relationship was found for films prepared on faceted and on non-faceted substrates. This implies a coherent crystal overgrowth of th…
Thermally induced emission of light from a metallic diffraction grating, mediated by surface plasmons
The angular emission of light of wavelength 710 and 810 nm from a gold diffraction grating was studied at about 700°C. A peak in the emission was found for defined angles. This contribution is purely TM-polarised and is attributed to thermally excited surface plasmons, coupled to light waves by the diffraction grating.
Growth of Fe nanostructures
Abstract Highly ordered arrays of epitaxial iron thin film nanostructures were grown by molecular beam epitaxy techniques on m-plane sapphire α-Al2O3 (1 0 1 0) substrates. Iron was deposited by electron beam evaporation under shallow incidence onto faceted sapphire substrates held at elevated temperatures of 450°C. Scanning electron microscopy suggests the formation of morphologically and electrically isolated nanowire structures on the ridges of the facets. The topology of the structures depends strongly on the iron deposition angle.
Thin film preparation of the low charge carrier density Kondo system CeSb
Abstract We report the thin film preparation of CeSb by means of molecular beam epitaxy (MBE) onto sapphire (1 1 −2 0) substrates. Above a substrate temperature of about 300°C CeSb crystallizes in (0 0 1) orientation. The growth mode of the films changes from a fiber textured to an epitaxial mode for deposition temperatures above 900°C. Although the specific resistivity is enhanced the characteristic energy scales, like the Kondo temperature TK and the magnetic ordering temperature TN, are not changed significantly.
Re-entrance phase formation of CeSb thin films
Abstract We report the epitaxial growth of (1 0 0)- and (1 1 1)-oriented CeSb thin films on Al 2 O 3 (1 1 2 0) and (0 0 0 1) substrates by means of molecular beam epitaxy. Depending on the overall Sb-to-Ce flux ratio and the molecular state of Sb x , we observe a re-entrance behavior in the phase formation and orientation of CeSb on Al 2 O 3 (1 1 2 0) . This behavior is shown to exhibit, in some respect, similarities to III–V compound growth, but also more complexities due to the instability of the rare earth component against oxidation. A geometric orientation selection model is suggested which reproduces the observed re-entrance behavior as well as the overall CeSb growth rate.
SISALv2: a comprehensive speleothem isotope database with multiple age–depth models
Characterizing the temporal uncertainty in palaeoclimate records is crucial for analysing past climate change, correlating climate events between records, assessing climate periodicities, identifying potential triggers and evaluating climate model simulations. The first global compilation of speleothem isotope records by the SISAL (Speleothem Isotope Synthesis and Analysis) working group showed that age model uncertainties are not systematically reported in the published literature, and these are only available for a limited number of records (ca. 15 %, n = 107/691). To improve the usefulness of the SISAL database, we have (i) improved the database’s spatio-temporal coverage and (ii) create…