Search results for "Sapphire"
showing 10 items of 114 documents
Ab initio simulations on charged interstitial oxygen migration in corundum
2018
We have performed this work within the framework of the EUROfusion Consortium receiving funding from the European grant agreement 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. Authors thank R. Vila, A.I. Popov, A. Luchshik and R.A. Evarestov for fruitful discussions. To carry out large-scale calculations, we have used the HPC supercomputer at Stuttgart University (Germany)
Performance of Dye and Ti:sapphire laser systems for laser ionization and spectroscopy studies at S3
2020
The novel and sensitive In-Gas Laser Ionization Spectroscopy (IGLIS) technique enables high-precision laser spectroscopy of the heaviest elements and isotopes very far from stability that are produced in fusion-evaporation reactions at in-flight separators. Powerful and dedicated laser systems are required in these facilities to realize in-gas jet laser spectroscopy with optimal spectral resolution and efficiency. The performance with respect to the requirements for IGLIS studies at the low energy front-end of the Super Separator Spectrometer (S3) at GANIL, France, of Dye and Ti:sapphire laser systems is investigated. In addition, a number of specific experimental cases on key isotopes of t…
Modelling of point defects in α-AL2O3
1995
Abstract The semiempirical method of the Intermediate Neglect of Differential Overlap (INDO), in the program SYMSYM, has been used for calculations on perfect and imperfect corundum crystals. For the perfect crystal the periodical Large Unit Cell (LUC) model was used while the Molecular Cluster (MC) model was used in defect calculations. By means of the MC model, we have investigated the optical properties of electronic centers (F+, F, F−, FMg, F− Mg) in corundum. Calculated optical properties of these defects are compared with experimental values and new bands are predicted to exist in the absorption spectrum of Mg-doped corundum. The energy levels of F-type and Mg-impurity related centers…
Radiation-induced electronic and ionic charge storage and release in sapphire
2002
Radiation-induced thermally stimulated relaxation (TSR) processes in the reduced α-Al 2 O 3 (sapphire) crystal were investigated at 290-650 K by means of the TS current (TSC), ionic depolarisation current (TSDC) and electron emission (TSEE) techniques. After thermal (ionic) polarisation of sapphire wide (∼75 K) and asymmetric ionic dipolar TSDC peak at T max 590 K (disorientation of the anion vacancy-related dipoles) was detected. This peak correlates with the wide TSEE peak at T max 615 K, the radiation-induced electrical degradation (RIED) yield rise above 550 K (T max 745 K) and the chromium emission line broadening ip ruby. Above 450-500 K the anion vacancy hopping (migration) starts. T…
Spontaneous oxygen loading into SiO2 glass by thermal anneal
2004
The interstitial oxygen molecules (O 2 ) in SiO 2 glass were detected down to ∼10 15 cm -3 by photoluminescence of O 2 at 1272nm excited at 765nm by a continuous-wave titanium sapphire laser. It was evidenced that SiO 2 glass thermally annealed in air between 800 and 1100°C spontaneously absorbs ∼10 16 cm -3 of O 2 from the ambient atmosphere. The time-dependent concentration change of the interstitial O 2 allows the determination of both the diffusion coefficient and the solubility of the interstitial O 2 .
Optical properties of thin films of ZnO prepared by pulsed laser deposition
2004
In this paper we report on the structural features and optical properties of wurtzite ZnO films epitaxially grown on sapphire, fluorite and mica substrates by means of pulsed laser deposition (PLD). Post-deposition annealing results in a clear improvement of the film quality, reflected by the small width of the exciton-related lines in both the absorption and the photoluminescence spectra. Photoluminescence spectra revealed a multi-line structure which is identified in term of free excitons and excitons complexes with neutral donors and deep centers. The relative intensity of the PL lines mainly depends on the nature of the substrate used. Concerning optoelectronic applications it is especi…
Correlation between Zn vacancies and photoluminescence emission in ZnO films.
2006
Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy. Jesus.Zuniga@uv.es Vicente.Munoz@uv.es
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
2000
Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…
Modulation of the electronic properties of GaN films by surface acoustic waves
2003
We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by …
Photoluminescence spectral dispersion as a probe of structural inhomogeneity in silica
2011
We perform time-resolved photoluminescence measurements on point defects in amorphous silicon dioxide (silica). In particular, we report data on the decay kinetics of the emission signals of extrinsic oxygen deficient centres of the second type from singlet and directly excited triplet states, and we use them as a probe of structural inhomogeneity. Luminescence activity in sapphire (alpha-Al(2)O(3)) is studied as well and used as a model system to compare the optical properties of defects in silica with those of defects embedded in a crystalline matrix. Only for defects in silica did we observe a variation of the decay lifetimes with emission energy and a time dependence of the first moment…