Search results for "Schottky diode"

showing 2 items of 52 documents

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

2016

Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed

silicon carbide (SiC)Materials scienceAnnealing (metallurgy)Schottky barrierSchottky diodesMetal–semiconductor junction01 natural sciencesTemperature measurementpower semiconductor deviceschemistry.chemical_compoundstomatognathic system0103 physical sciencesSilicon carbidecurrent-voltage characteristicsElectrical and Electronic EngineeringSafety Risk Reliability and QualityDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodemodelingElectronic Optical and Magnetic MaterialschemistryOptoelectronicsbusinession radiation effectsVoltageIEEE Transactions on Device and Materials Reliability
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Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

2020

The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating. peerReviewed

säteilyfysiikkapuolijohteetsingle-event effectsSchottky diodesdioditSilicon carbidevertical MOSFETelektroniikkakomponentit
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