Search results for "Semiconductor"

Schottky barrier height tuning by Hybrid organic-inorganic multilayers

2014

ABSTRACTSemiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I–V) measurements in the thickness range of 1-5 bilayers (BL).At different number of layers, current-voltage (I–V) measurements were performed. Results showed a rectifying behavior. Junction parame…

750 mW continuous-wave solid-state deep ultraviolet laser source at the 253.7 nm transition in mercury.

2007

A high-power continuous-wave coherent light source at 253.7 nm is described. It is based on a solid-state Yb:YAG disk laser with two successive frequency doubling stages and is capable of generating stable output powers of up to 750 mW. Spectroscopy of the 6 (1)S(0)-6 (3)P(1) transition of mercury has been demonstrated.

Focusing of surface-acoustic-wave fields on (100) GaAs surfaces

2003

Focused surface-acoustic waves (SAWs) provide a way to reach intense acoustic fields for electro- and optoacoustic applications on semiconductors. We have investigated the focusing of SAWs by interdigital transducers (IDTs) deposited on (100)-oriented GaAs substrates. The focusing IDTs have curved fingers designed to account for the acoustic anisotropy of the substrate. Different factors that affect focusing, such as the aperture angle and the configuration of the IDT fingers, were systematically addressed. We show that the focusing performance can be considerably improved by appropriate choice of the IDT metal pads, which, under appropriate conditions, create an acoustic waveguide within t…

2017

Dielectric loaded surface plasmon waveguides (DLSPPWs) comprised of polymer ridges deposited on top of CMOS compatible metal thin films are investigated at telecom wavelengths. We perform a direct comparison of the properties of copper (Cu), aluminum (Al), titanium nitride (TiN) and gold (Au) based waveguides by implementing the same plasmonic waveguiding configuration for each metal. The DLSPPWs are characterized by leakage radiation microscopy and a fiber-to-fiber configuration mimicking the cut-back method. We introduce the ohmic loss rate (OLR) to analyze quantitatively the properties of the CMOS metal based DLSPPWs relative to the corresponding Au based waveguides. We show that the Cu,…

Molecular Semiconductors — Doped Insulator (MSDI) heterojunctions as new conductometric devices for chemosensing in wet atmosphere.

2015

Most of the gas sensors are based on resistors with inorganic materials and more rarely on other conductometric devices (diodes or transistors). Conductometric sensors have also been designed with molecular materials. Thus, in 2009, Molecular Semiconductor — Doped-insulator (MSDI) heterojunctions were built around a heterojunction between a molecular semiconductor (MS) and a doped-insulator (DI). The MS must be more conductive than the sublayer to take advantage of the heterojunction. The MS is generally of p-type and DI can be of p-type (p-MSDI) or n-type (n-MSDI) material. The energy barrier at the interface depends on the difference in the charge carrier density in the two layers, leadin…

B7.3 - Field Effect SnO2 Nano-Thin Film Layer CMOS-Compatible

2009

The integration of metal oxide gas sensing layers into CMOS electronic still a challenge especially due to the high operating temperatures that do not comply with silicon transistor limits , even more critical, and metal oxide annealing temperatures. External electric fields will allow control over the energy levels of the sensing layer and thus over adsorption sensitivity, consequently the interaction between gas and sensitive layer is modulated. As the absorbed gas on the surface produces a band bending, it changes conduction paths allowing gas detection through resistance measurements. With this configuration, field switch offers fast desorption and thus handling of low temperature respo…

Raman measurements on GaN thin films for PV - purposes

2012

Raman scattering (RS) is a very important experimental tool to characterize the optical modes and another elementary excitations of materials. Among other issues it can determine for example the degree of crystalline quality and point defects like local modes. Therefore GaN - thin films and related compounds for photovoltaic purposes and as processed by several systems have been measured by this technique. The films were grown by Molecular Beam Epitaxy (MBE), Close Spaced Vapor Transport (CSVT) and Laser Ablation (LA) with the use of optimal growth parameters and substrates. Gallium nitride crystallizes in the wurtzite structure with 4 atoms in the unit cell and presents 7 allowed Raman mod…

Responsivity measurements of silicon carbide Schottky photodiodes in the UV range

2014

We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky UV detectors, fabricated employing Ni 2 Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I-V characteristics as a function of temperature and C-V characteristics. Responsivity measurements of the devices, as function of wavelength in the UV range, of package temperature and of applied reverse bias are reported. We also compared devices featuring different strip pitch sizes, discussing their performances, and found the device exhibiting best results.

InAlN underlayer for near ultraviolet InGaN based light emitting diodes

2019

We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhibits a bandgap of 4.6 eV. This allows alleviating absorption issues in NUV LEDs. We demonstrate that the internal quantum efficiency of 405 nm single InGaN/GaN quantum well LEDs with InAlN UL is similar to 70% compared to less than 10% for LEDs without UL. Excellent I-V characteristics are achieved thanks to polarization charge screening with high doping level at the InAlN/GaN interface. (C) 2019 The Japan Society of Applied Physics

Gamma-ray spectrometric measurement of radionuclide purity of radiopharmaceuticals contained in bottle samples

2012

The radionuclide purity of a radiopharmaceutical product is usually measured by gamma-ray spectrometry with various measurement geometries. The importance of this test is that the radionuclide impurities, if present, result in an increase in the radiation dose to the patient without contributing to diagnostic information and in some cases may also interfere with the marking molecules and affect the proper conduct of diagnostic examination. In this work, gamma-ray spectrometry is used to determine the amounts of impurities by adopting as measurement geometry the same bottle containing eluted or prepared radiopharmaceuticals. In addition to high-purity germanium semiconductor detectors, the u…