Search results for "Semiconductor"
showing 10 items of 974 documents
A logarithmic multi-parameter model using gas sensor main and cross sensitivities to estimate gas concentrations in a gas mixture for SnO2 gas sensors
2007
Abstract In a metal-oxide semiconductor gas sensor, the sensitivity of the metal-oxide resistance to concentrations of reducing gases in the surrounding atmosphere is known to be related to adsorption and desorption of gas on the redox reactions between the gas and oxygen. Changes in the electric conductance due to these reactions were measured for tin dioxide semiconductor gas sensors. In this study, we propose a model of gas sensor responding behaviour using a relationship between sensor conductance and gas concentrations in a mixture. A least-squares method fit of measured data was applied to determining the values of coefficients. The proposed method uses main and cross sensitivities th…
Properties of titanium dioxide
2021
"Properties of titanium dioxide" presents a survey of the main physicochemical properties of TiO2 upon which rely all of the applications of this material. Structures and morphologies of titanium dioxide have been taken into account, also in correlation with thermodynamic properties. Bulk and surface defectivity has been described in detail, because of its relevant consequences in terms of catalytic activity. The basic mechanisms of interaction between photons and TiO2 have been discussed on the basis of the optoelectronic features of the semiconductor. Finally, electrical, mechanical, and rheological properties of TiO2 have been presented.
Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors
2022
SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with…
A Compact SPICE Model for Organic TFTs and Applications to Logic Circuit Design
2016
This work introduces a compact DC model developed for organic thin film transistors (OTFTs) and its SPICE implementation. The model relies on a modified version of the gradual channel approximation that takes into account the contact effects, occurring at nonohmic metal/organic semiconductor junctions, modeling them as reverse biased Schottky diodes. The model also comprises channel length modulation and scalability of drain current with respect to channel length. To show the suitability of the model, we used it to design an inverter and a ring oscillator circuit. Furthermore, an experimental validation of the OTFTs has been done at the level of the single device as well as with a discrete-…
Supramolecular self-assembly on the B-Si(111)-(√3x√3) R30° surface: From single molecules to multicomponent networks
2017
Abstract Understanding the physical and chemical processes in which local interactions lead to ordered structures is of particular relevance to the realization of supramolecular architectures on surfaces. While spectacular patterns have been demonstrated on metal surfaces, there have been fewer studies of the spontaneous organization of supramolecular networks on semiconductor surfaces, where the formation of covalent bonds between organics and adatoms usually hamper the diffusion of molecules and their subsequent interactions with each other. However, the saturation of the dangling bonds at a semiconductor surface is known to make them inert and offers a unique way for the engineering of m…
Fabricación, caracterización estructural y óptica de capas plasmónicas y puntos cuánticos: aplicaciones
2013
En esta tesis se ha desarrollado una nueva metodología de síntesis química (sol-gel) para la fabricación in situ de nanocomposites metálicos en forma de capa delgada, compuestos por nanopartículas de Au y Ag embebidas en matrices dieléctricas sólidas de TiO2 y SiO2. Con dicha metodología se puede controlar el tamaño y el factor de llenado de las nanopartículas, que se han caracterizado mediante el uso de técnicas de microscopía electrónica (SEM, TEM, HAADF-STEM) y de caracterización de superficie (AFM). Además, se han empleado diversas técnicas para medir las propiedades ópticas de estas capas, como son la extinción, transmitancia y reflectancia, así como el índice de refracción por medio d…
Highly efficient light-emitting electrochemical cells
2016
El consumo eléctrico destinado a iluminación supone actualmente cerca del 20% de la producción energética a nivel mundial, de modo que es posible alcanzar un importante ahorro energético mediante el uso de sistemas de iluminación más eficientes. El desarrollo tecnológico permite hacer uso de aplicaciones más eficientes y novedosos en dicho campo. Los diodos orgánicos emisores de luz (OLEDs) suponen una alternativa de futuro a los dispositivos emisores de luz actuales. El procesado de materiales orgánicos se adapta más fácilmente a nuevos diseños de dispositivos emisores de luz y es, a día de hoy, una realidad en pequeñas pantallas para dispositivos móviles o similares. Sin embargo, los OLED…
X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors
2006
We have studied by X-ray absorption spectroscopy the local environment of Mn in highly homogeneous Ga 1-x Mn x N (0.06 <x<0.14) thin epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The measurements were performed in fluorescence mode around the Ga and Mn K-edges. In this report, we focus our attention to the X-ray absorption near edge spectroscopy (XANES) results. The comparison of the XANES spectra corresponding to the Ga and Mn edges indicates that Mn is substitutional to Ga in all samples studied. The XANES spectra measured at the Mn absorption edge shows in the near-edge region a double peak and a shoulder below the absorption edge and the main absorption peak after …
Electronic structure of EuO spin filter tunnel contacts directly on silicon
2011
We present an electronic structure study of a magnetic oxide/ semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon-based spintronics devices. A combined electronic structure analysis of Eu core levels and valence bands using hard X-ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO “spin filter” tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintr…
Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet range
2018
The giant birefringence of layered h-BN was demonstrated by analyzing the interference patterns in reflectance and transmittance measurements in the mid-infrared to the deep ultraviolet energy range. The refractive index for polarization perpendicular to the c axis is much higher than the refractive index for polarization parallel to the c axis, and it displays a strong increase in the ultraviolet range that is attributed to the huge excitonic effects arising from the unique electronic structure of h-BN. Thus, h-BN is shown to exhibit a giant negative birefringence that ranges from -0.7 in the visible to -2 in the deep ultraviolet close to the band gap. The electronic dielectric constants f…