Search results for "Silicon photonics"
showing 8 items of 28 documents
Advanced nonlinear signal processing in silicon-based waveguides
2015
This talk presents recent progress in optical signal processing based on compact waveguides fabricated mainly using silicon germanium alloys. Applications include supercontinuum generation, wavelength conversion and signal regeneration.
Polarization Insensitive Wavelength Conversion in a Low-Birefringence SiGe Waveguide
2016
We report the first demonstration of a single-pass dual-orthogonal-pump four-wave mixing-based wavelength conversion scheme in a silicon-based waveguide. The silicon germanium waveguide used was designed to exhibit strong TE/TM mode similarity across a broad wavelength range as well as a large nonlinear coefficient. A polarization-dependent loss of just 0.42 dB was measured, and the conversion of 40-Gb/s differential phase-shift keying signals was demonstrated with 1.5-dB power penalty at a bit error ratio of $10^{-9}$ .
New Molecular-Based Materials for Enabling Electro-Optical Bistability in the Silicon Photonics Platform
2019
Electro-optical bistability is a functionality which can be crucial for a wide range of applications as it can enable non-volatile and ultra-low power switching performance. We investigate the integration of a molecular-based material presenting a Spin Crossover (SCO) effect in the silicon platform for enabling optical bistability. The SCO phenomenon involves a switching process between two molecular spin states. This spin transition comes along with a change in the optical refractive index that can be switched by different external stimuli such as a variation of temperature or light irradiation and which has a hysteretic behaviour. The SCO material can be synthetized as nanoparticles so th…
Ultra-sensitive refractive index sensor using CMOS plasmonic transducers on silicon photonic interferometric platform
2020
Optical refractive-index sensors exploiting selective co-integration of plasmonics with silicon photonics has emerged as an attractive technology for biosensing applications that can unleash unprecedented performance breakthroughs that reaps the benefits of both technologies. However, towards this direction, a major challenge remains their integration using exclusively CMOS-compatible materials. In this context, herein, we demonstrate, for the first time to our knowledge, a CMOS-compatible plasmo-photonic Mach-Zehnder-interferometer (MZI) based on aluminum and Si3N4 waveguides, exhibiting record-high bulk sensitivity of 4764 nm/RIU with clear potential to scale up the bulk sensitivity value…
Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime
2013
We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
PSA-based phase regeneration of DPSK signals in a silicon germanium waveguide
2015
We demonstrate a polarization-assisted PSA-based phase regenerator in a passive low-birefringence SiGe waveguide at low CW pump power. A PSER of 28.6-dB enables a six-fold reduction in phase-error and BER improvement of approximately 2-dB in the regenerated signal.
Properties of silicon integrated photonic lenses: bandwidth, chromatic aberration, and polarization dependence
2013
We analyze the properties of silicon integrated photonic lenses based on scattering optical elements. The devices have been inverse- designed by combining genetic algorithms and the multiple scattering theory. These lenses are able to focus an infrared plane wave front on a position freely determined during the design stage. The nanofabricated silicon integrated lenses have proved effective over a large range of wave- lengths, measured to be of the order of 100 nm. The lenses show chromatic aberration, with a displacement of the position of the focus mea- sured to be higher than 1.5 μm when the wavelength varies from 1500 to 1600 nm. Moreover, we analyze the polarization of the focused beam…
Inverse dispersion design in silicon waveguides
2014
We present a numerical tool to find the cross-section geometry of silicon-oninsulator waveguides that leads to a target dispersion profile. In < 10 iterations, we achieve geometries providing ultraflattened dispersion over 350 nm bandwidth.