Search results for "Silicon"
showing 10 items of 1391 documents
A novel approach for parameters determination in four lumped PV parametric model with operative range evaluations
2013
The paper presents a novel numerical approach for the parameters determination of crystalline silicon PV models four lumped parameters equivalent circuit. The novel approach basically deals with a new method, alternative to the iterative one known in literature, to calculate the series resistance. Particularly, it allows the evaluation of the lumped parameters on the basis of the manufacturer’s datasheet. The new approach has been validated both in the Maximum Power Point (MPP) and close to it by comparing values and curves obtained by means of the model implementation in Matlab/Simulink environment with those related to some five parameters models and manufacturer curves. Results show that…
Telecom-compatible, affordable and scalable quantum technologies
2022
The realistic implementation of quantum architectures relies on the development of scalable, resource-efficient platforms that are compatible with CMOS technologies as well as fiber networks. This work demonstrates novel schemes utilized for time-/frequency-bin entanglement generation and processing by leveraging existing telecommunications and integrated photonics infrastructures.
Signal to Noise Ratio of Silicon Photomultipliers: a study in the Continuous Wave Regime
2014
We report on Signal to Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function of the temperature …
Resistance to disinfection of a polymicrobial association contaminating the surface of elastomeric dental impressions.
2009
The aim of this study was to evaluate the ability to resist disinfection of a polymicrobial association contaminating the surface of dental impressions obtained with two different elastomers: a polyether (Impregum) and an addition-polymerized silicone (Elite). Impressions were contaminated with a mixture of three biofilm-forming microorganisms (Staphylococcus aureus, Pseudomonas aeruginosa and Candida albicans) and disinfected immediately after contamination, or after microbial layers were allowed to develop during a six-hour storage. Two commercial disinfectants were tested: MD 520 containing 0.5% glutaraldehyde and Sterigum Powder without glutaraldehyde. Residual contamination was recover…
Experimental Studies Regarding the Mechanical Behaviour of Silicon-Coated and Uncoated P.A. 6.6 Fabrics
2014
These paper aims to present an experimental study for determining the mechanical properties of woven fabrics used for airbags manufacturing. In order to realise the study, there were chosen two types of fabric, one that is coated with silicon and one that is uncoated. The experimental tests that were carried out were uniaxial tension tests for samples extracted on the warp and on the weft direction, the Bias test, a test specific for shear loads and the dome test, a test specific for biaxial loads. For the uniaxial tension test the force-displacement curve was obtained and the maximum values of the loads and the displacement. For the last two tests (bias test and dome test) there have been …
Pd/Au/SiC Nanostructured Diodes for Nanoelectronics: Room Temperature Electrical Properties
2010
Pd/Au/SiC nanostructured Schottky diodes were fabricated embedding Au nanoparticles (NPs) at the metalsemiconductor interface of macroscopic Pd/SiC contacts. The Au NPs mean size was varied controlling the temperature and time of opportune annealing processes. The electrical characteristics of the nanostructured diodes were studied as a function of the NPs mean size. In particular, using the standard theory of thermoionic emission, we obtained the effective Schottky barrier height (SBH) and the effective ideality factor observing their dependence on the annealing time and temperature being the signature of their dependence on the mean NP size. Furthermore, plotting the effective SBH as a fu…
Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide
2019
Atomic layer deposition (ALD) is the method of choice to obtain uniform insulating films on graphene for device applications. Owing to the lack of out-of-plane bonds in the sp(2) lattice of graphene, nucleation of ALD layers is typically promoted by functionalization treatments or predeposition of a seed layer, which, in turn, can adversely affect graphene electrical properties. Hence, ALD of dielectrics on graphene without prefunctionalization and seed layers would be highly desirable. In this work, uniform Al2O3 films are obtained by seed-layer-free thermal ALD at 250 degrees C on highly homogeneous monolayer (1L) epitaxial graphene (EG) (amp;gt;98% 1L coverage) grown on on-axis 4H-SiC(00…
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
2019
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data. peerReviewed
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
2020
Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes. peerReviewed