Search results for "Silicon"
showing 10 items of 1391 documents
New Molecular-Based Materials for Enabling Electro-Optical Bistability in the Silicon Photonics Platform
2019
Electro-optical bistability is a functionality which can be crucial for a wide range of applications as it can enable non-volatile and ultra-low power switching performance. We investigate the integration of a molecular-based material presenting a Spin Crossover (SCO) effect in the silicon platform for enabling optical bistability. The SCO phenomenon involves a switching process between two molecular spin states. This spin transition comes along with a change in the optical refractive index that can be switched by different external stimuli such as a variation of temperature or light irradiation and which has a hysteretic behaviour. The SCO material can be synthetized as nanoparticles so th…
Ultra-sensitive refractive index sensor using CMOS plasmonic transducers on silicon photonic interferometric platform
2020
Optical refractive-index sensors exploiting selective co-integration of plasmonics with silicon photonics has emerged as an attractive technology for biosensing applications that can unleash unprecedented performance breakthroughs that reaps the benefits of both technologies. However, towards this direction, a major challenge remains their integration using exclusively CMOS-compatible materials. In this context, herein, we demonstrate, for the first time to our knowledge, a CMOS-compatible plasmo-photonic Mach-Zehnder-interferometer (MZI) based on aluminum and Si3N4 waveguides, exhibiting record-high bulk sensitivity of 4764 nm/RIU with clear potential to scale up the bulk sensitivity value…
Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime
2013
We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
PSA-based phase regeneration of DPSK signals in a silicon germanium waveguide
2015
We demonstrate a polarization-assisted PSA-based phase regenerator in a passive low-birefringence SiGe waveguide at low CW pump power. A PSER of 28.6-dB enables a six-fold reduction in phase-error and BER improvement of approximately 2-dB in the regenerated signal.
On the experimental validation of an improved five-parameter model for silicon photovoltaic modules
2012
Abstract This paper presents the experimental validation of a new five-parameter model capable of analytically describing the I–V characteristic of a silicon photovoltaic module for each generic condition of operative temperature and solar irradiance. The operating current calculated with the model was validated on the basis of a series of experimental measurements performed in the field on two commercial silicon photovoltaic panels connected to a set of nine constant values of the electrical load. In order to examine the panels working in almost steady-state conditions only the data-sets of the sunniest days from sunrise to sunset were used. Unfortunately the production spread of photovolt…
Electrical characterization of high-efficiency bifacial silicon solar cells
2018
This work presents a preliminary study on the electrical characterization of high efficiency bifacial solar cells. An opening discussion on the state-of-the-art of such advanced technology is initially proposed and the experimental characterization of some prototypes is described. From this analysis, it can be stated that the bifacial silicon solar cells can be a very promising technology with high electrical performances and efficiency.
Control of the pore wall thickness and thermal stability in low-cost bimodal porous silicas
2019
Abstract A new hierarchical bimodal mesoporous silica, labelled as UVM-12 (acronym of University of Valencia Materials), has been prepared by using a solution of sodium silicate as low-cost silicon source. The final self-assembling between cationic micelles of CTAB and anionic inorganic Si-based oligomers occurs in a homogeneous aqueous medium. The reaction is carried out from low-sized building blocks through a bottom-up approach. The UVM-12 solids combine two mesopore systems according to N2 adsorption–desorption isotherms, what is corroborated by TEM micrographs and XRD patterns. This material has been inorganically modified by incorporation of Al or Ti (M-UVM-12, M = Al, Ti) without alt…
Al-27 and Si-29 Solid-State NMR Characterization of Calcium-Aluminosilicate-Hydrate
2012
International audience; Calcium silicate hydrate (C-S-H) is the main constituent of hydrated cement paste and determines its cohesive properties. Because of the environmental impact of cement industry, it is more and more common to replace a part of the clinker in cement by secondary cementitious materials (SCMs). These SCMs are generally alumina-rich and as a consequence some aluminum is incorporated into the C-S-H. This may have consequences on the cohesion and durability of the material, and it is thus of importance to know the amount and the location of Al in C-S-H and what the parameters are that control these features. The present paper reports the Si-29 and Al-27 MAS NMR analyses of …
Luminescence of ODC(II) in quartz and cristobalite glasses
2022
Abstract The results of the optical spectroscopy of twofold coordinated silicon centers – ODC(II) in quartz and cristobalite glasses are presented. The luminescence and excitation spectra attributed to different local symmetry of ODC(II) were investigated under synchrotron excitation in the VUV region. The observed differences in the luminescence and excitation spectra of ODC(II) are caused by the environment and, therefore, short-range order in the samples.
Molecular dynamics simulation of epitaxial growth of the Si(001) surface
1988
Abstract Molecular beam epitaxy on a Si(100) substrate has been studied using a molecular dynamics method with the Stillinger-Weber model potential. At high substrate temperature, 800 K, well ordered crystalline layers are found to grow underneath an amorphous overlayer of approximately 5 A thick. A limiting temperature for epitaxial growth is found to be 480 K, below which the growth does not produce ordered layers. When the sample deposited below 480 K is heated up to 800 K and the deposition is started again the original adatoms start to form ordered atomic layers. Thus the collisions of the deposited atoms in addition to the substrate temperature seem to play an essential role in the gr…