Search results for "Silicon"
showing 10 items of 1391 documents
Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films
2008
Solid phase epitaxial regrowth (SPER) of p -doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p - and n -type doping. We introduced a charged defect, whose energy level is independent of the dopant species. © 2008 American Institute of Physics.
Protein delivery based on uncoated and chitosan-coated mesoporous silicon microparticles
2011
Mesoporous silicon is a biocompatible, biodegradable material that is receiving increased attention for pharmaceutical applications due to its extensive specific surface. This feature enables to load a variety of drugs in mesoporous silicon devices by simple adsorption-based procedures. In this work, we have addressed the fabrication and characterization of two new mesoporous silicon devices prepared by electrochemistry and intended for protein delivery, namely: (i) mesoporous silicon microparticles and (ii) chitosan-coated mesoporous silicon microparticles. Both carriers were investigated for their capacity to load a therapeutic protein (insulin) and a model antigen (bovine serum albumin) …
Nitrogen interstitial defects in silicon. A quantum mechanical investigation of the structural, electronic and vibrational properties
2019
The vibrational features of eight interstitial nitrogen related defects in silicon have been investigated at the first principles quantum mechanical level by using a periodic supercell approach, a hybrid functionals, an all electron Gaussian type basis set and the Crystal code. The list includes defects that will be indicated as Ni (one N atom forming a bridge between two Si atoms), Ni-Ns (one interstitial and one substitutional N atom linked to the same Si atom), Ni-Ni (two Ni defects linked to the same couple of silicon atoms) and Ni-Sii-Ni (two Ni defects linked to the same interstitial silicon atom). Four 〈0 0 1〉 split interstitial (dumbbell) defects have also been considered, in which …
Neural cell pattern formation on glass and oxidized silicon surfaces modified with poly(N-isopropylacrylamide)
1996
Control over the adsorption of proteins and over the adsorption and spatial orientation of mammalian cells onto surfaces has been achieved by modification of glass and other silicon oxide substrates with poly(N-isopropylacrylamide) (PNIPAM). The functionalization of the substrates was achieved either by a polymer-analogous reaction of aminosilanes with reactive N-(isopropylacrylamide) (NIPAM)-copolymers and by copolymerization of NIPAM with surface-bound methacrylsilane. The obtained coatings were characterized by FT-1R, ellipsometry, and surface plasmon resonance measurements. The adsorption of two proteins-fibrinogen and ribonuclease A-on these surfaces was studied in situ by real time su…
Timing performance of the silicon PET insert probe
2010
Simulation indicates that PET image could be improved by upgrading a conventional ring with a probe placed close to the imaged object. In this paper, timing issues related to a PET probe using high-resistivity silicon as a detector material are addressed. The final probe will consist of several (four to eight) 1-mm thick layers of silicon detectors, segmented into 1 x 1 mm(2) pads, each pad equivalent to an independent p + nn+ diode. A proper matching of events in silicon with events of the external ring can be achieved with a good timing resolution. To estimate the timing performance, measurements were performed on a simplified model probe, consisting of a single 1-mm thick detector with 2…
High accuracy Raman measurements using the Stokes and anti-Stokes lines
1997
We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applie…
Energy balance in single exposure multispectral sensors
2013
International audience; Recent simulations of multispectral sensors are based on a simple Gaussian model, which includes filters transmittance and substrate absorption. In this paper we want to make the distinction between these two layers. We discuss the balance of energy by channel in multispectral solid state sensors and propose an updated simple Gaussian model to simulate multispectral sensors. Results are based on simulation of typical sensor configurations.
Solar blind detectors based on AlGaN grown on sapphire
2005
Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary re…
Tuning size and thermal hysteresis in bistable spin crossover nanoparticles.
2010
Nanoparticles of iron(II) triazole salts have been prepared from water-organic microemulsions. The mean size of the nanoparticles can be tuned down to 6 nm in diameter, with a narrow size distribution. A sharp spin transition from the low spin (LS) to the high spin (HS) state is observed above room temperature, with a 30-40-K-wide thermal hysteresis. The same preparation can yield second generation nanoparticles containing molecular alloys by mixing triazole with triazole derivatives, or from metallic mixtures of iron(II) and zinc(II). In these nanoparticles of 10-15 nm, the spin transition "moves" towards lower temperatures, reaching a 316 K limit for the cooling down transition and mainta…
Towards an analytical framework for tailoring supercontinuum generation.
2016
A fully analytical toolbox for supercontinuum generation relying on scenarios without pulse splitting is presented. Furthermore, starting from the new insights provided by this formalism about the physical nature of direct and cascaded dispersive wave emission, a unified description of this radiation in both normal and anomalous dispersion regimes is derived. Previously unidentified physics of broadband spectra reported in earlier works is successfully explained on this basis. Finally, a foundry-compatible few-millimeters-long silicon waveguide allowing octave-spanning supercontinuum generation pumped at telecom wavelengths in the normal dispersion regime is designed, hence showcasing the p…